Magnetic Penetration Depth and Coherence Length in A Single-Crystal Yba Cu O

NAME: KARIKARI MAXWELL ID: 10939139
Magnetic penetration Depth and Coherence Length in a Single-Crystal YBa2Cu3O7-α

At some point in time, there was no proper way to explain the fundamental principle explaining
the phenomena of superconductivity. In 1950 Ginzburg-Landau (GL) established a theory based
on the theory of the second-phase transitions founded in 1937 by Lev Landau. The GL theory
filled the gap in the London brothers’ work of explaining the superconductivity theory. However,
the problem with GL theory was that, it was not able to fully explain the theory at the
microscopic level but with thermodynamics. This was resolved by the Barden-Cooper Schriefer
theory which accounts for the superconductor-normal transition, as well as thermodynamic,
electrodynamic, and quantum effects of the superconducting phase.The variety of behaviors of a
superconducting material subjected to an external magnetic field B=μH can be summarized into
The Meissner–Oschenfeld effect and mixed state that is to consider how much penetration can
happen. YBa2Cu3O7δ (YBCO) is one of the most interesting superconductors. YBC is extracted
from a batch of crystals and prepared the standard flux method and its crystals grown using
traveling-solvent floating-zone technique. Its crystallinity was determined using TEM. YBCO is
doped and taken unto some specific dimensions and is finally placed in an RC filter and
characterized. The following graphs were obtained.
Figure 4 shows temperature dependence of
the resistivity for the optimally doped YBCO
high-temperature superconductor at magnetic
fields B =0, 0.6, 1.2, 2.4, 5, 7.5, 10, and 14 T
for B∥c axis and B⊥c-axis near the
superconducting transition Tc region. In zero
magnetic field, the prepared sample exhibits
a sharp transition to zero resistivity at critical
temperature Tc. The sharpness of the
transition is proportional to the degree of
interconnectivity of grains. By applying the
magnetic field, the transition is broadened
remarkably with an increase in the magnetic
field.
Summary of the Paper: Electroceramics for High-Energy-Density Capacitors: Current
Status and Future Perspectives.
Historical Issues
• By the Paris Agreement goal, global warming is set to be reduced to <1.50 0C by reducing
45% of carbon dioxide emissions (CO2). In doing so, renewable energy-based technologies
such as solar panels have been employed
• Dielectric capacitors possess high power density and are more efficient as a viable candidate
to be used as energy storage devices for the goal rather than renewable energy sources
energy materials such as solar panel, this is because they have higher charging and
discharging properties, high power, and energy density, as required by this kind of energy
technology.
• electro ceramics show good matching behaviors. Per the needed characteristics, the electro
ceramics must have a density greater than 10 Jcm-3, 90% conversion efficiency, endure a
wide temperature range of -500C to 2500C, 1-1kHz, and others.
Principles
• The intrinsic band gap is also a factor that affects the energy density of energy saving
devices, generally, the activation energy and the band gap may be increased by doping or
forming solid solutions which in turn increase the energy density and breakdown strength of
the capacitors.
• Electrical homogeneity can reduce the energy density and breakdown strength by forming
pathways of high conducting regions of the microstructure and eliminating the
heterogeneity, which in turn, increases the work density and the breakdown strength. This
may be done by heat treatment.
Ceramics with low densities consists of voids that cause short-circuiting. High-density
electroceramics are obtained by optimization of sintering conditions including its temperature,
temperature time, heating, and cooling rate.
Summary of the paper: Low-power Silicon Devices
Low-power electronics had its beginnings in 1947 when the transistor was invented and replaced
power hungry vacuum tubes. Integrated circuits (ICs) reduced power consumption further,
because numerous devices could be placed on one chip, alleviating the interconnection problem
and reducing power consumption. However, the key low-power breakthrough was the invention
of the complementary metal-oxide-semiconductor (CMOS) integrated circuit. The need for low-
power electronics is driven by three distinct applications: (i) portable electronic products (ii)
enhanced performance with a low power dissipation; and (iii) conservation of power in desktop
systems where a competitive life cycle cost-top performance ratio demands low power for
reduced power supply and cooling costs. The building block of CMOS is the metal oxide-
semiconductor field-effect transistor (MOSFET) which is the
building block of low power electronics. The diagram below
shows a MOSFET. The two most critical dimensions of a
MOSFET are its gate length, often called the channel length,
and gate oxide thickness. They vary widely, but gate lengths are
typically 0.2–5.0x 10 -4 cm and oxide thickness
2–10x 10-7 cm. The CMOS circuits, helps irradicate the current drainage problem in MOSFET
by initiating the standby current, i.e., the current during either one of its two logic states, is very
low, making for low power dissipation in steady state. The energy consumed per unit time by a
device is the power used by the device. A better improvement of the energy consumption of
electronic circuit devises is the silicon-on-insulator. These are produced by making ICs on
silicon wafers. There are two methods for producing SOI wafers: (i) Separation by Implanted
Oxygen (SIMOX) wafers are formed by oxygen implantation into bulk silicon wafers followed
by appropriate anneals. (ii) Bond and Etch Back SOI (BESOI) wafers are formed by bonding two
oxidized wafers followed by annealing, lapping, and etching or cleaving of hydrogen implanted
wafers
REFERENCES
[1] Ahmed Abou El Hassan et el, Magnetic Penetration Depth and Coherence Length in a Single-Crystal
YBa2Cu3O7δ, Advanced Science news, 2016.
[2] Chandrakasan A P, Sheng S, Brodersen R W 1995 Minimizing power consumption in digital CMOS
circuits. Proc. IEEE 83,498–523
[3] Ge Wang, et el. Electroceramics for High-Energy Density Capacitors: Current Status
and Future Perspectives. Chemical reviews, https://doi.org/10.1021/acs.chemrev.0c01264
Chem. Rev. 2021, 121, 6124-6172

Magnetic Penetration Depth and Coherence Length in A Single-Crystal Yba Cu O

Uploaded by

Document Informationclick to expand document information

Copyright:

Available Formats

Magnetic Penetration Depth and Coherence Length in A Single-Crystal Yba Cu O

Uploaded by

Document Information

Original Description:

Original Title

Copyright

Available Formats

Share this document

Share or Embed Document

Sharing Options

Did you find this document useful?

Is this content inappropriate?

Copyright:

Available Formats

Magnetic Penetration Depth and Coherence Length in A Single-Crystal Yba Cu O

Uploaded by

Copyright:

Available Formats

NAME: KARIKARI MAXWELL ID: 10939139

Magnetic penetration Depth and Coherence Length in a Single-Crystal YBa2Cu3O7-α

Status and Future Perspectives.

You might also like