Module 2

RF/Microwave Amplifier Design

Dr. Shilpa Kharche

Terna Engineering College, Nerul

1
 Maximum Gain Amplifier Design - Bilateral
Bilateral:
For Maximum gain Amplifier design where
S12ǂ0 and unilateral assumptions can not
be made, One has to select Bilateral one.
simultaneous conjugate matching is used.

For Conjugate Solving the

matching at simultaneous
source Conjugate
For Conjugate matching
matching at equations, we
Load get

Simultaneous Conjugate match

assumes unconditionally stable case.
For potentially unstable case Gp and
GA can be used instead of GT.
 Maximum Gain Amplifier Design - Bilateral

The transducer power gain is

The maximum stable gain is

Maximum Gain Amplifier Design - Bilateral
1. Check Stability of the transistor

2. If S12ǂ0, Calculate Unilateral Figure of merit and check error range. If it is within ± 0.5 dB, Use unilateral
formulae. Otherwise go for Bilateral.

3. Calculate the maximum Gain of the amplifier

4. Determine Termination for Bilateral case

5. Design Input and output matching network (Single Stub Matching Network or Lumped Element)

6. Make final circuit

 Maximum Gain Amplifier Design - Bilateral

1. Check Stability of the transistor

Since |Δ| < 1 and K > 1, The GaAs FET is unconditionally stable
 Maximum Gain Amplifier Design - Bilateral

2. If S12ǂ0, Calculate Unilateral Figure of merit and check error range. If it is within ±
0.5 dB, Use unilateral formulae. Otherwise go for Bilateral.

U= 0.1085 and Error Range is

Since, Error Range is more than ± 0.5 dB, unilateral assumptions can not be made. Use Bilateral
 Maximum Gain Amplifier Design - Bilateral

Calculate the maximum Gain of the amplifier

 Maximum Gain Amplifier Design - Bilateral

Determine Terminations
 Maximum Gain Amplifier Design - Bilateral

Design Matching Networks

Maximum Gain Amplifier Design - Bilateral

Source side Matching Networks

Lstub: 0.185λ
Dstub: 0.0615λ
Maximum Gain Amplifier Design - Bilateral

Load side Matching Networks

Lstub: 0.176λ
Dstub: 0.169λ
 Maximum Gain Amplifier Design - Bilateral

Final Amplifier schematic with Matching Networks

Lstub: 0.185λ
Dstub: 0.0615λ

Lstub: 0.176λ
Dstub: 0.169λ
 Constant-Gain Circles and Design for Specified Gain

• Sometimes, it is preferable to design for less than the maximum obtainable gain, to improve
bandwidth or to obtain a specific value of amplifier gain.
• This can be done by designing the input and output matching sections to have less than
maximum gains; in other words, mismatches is allowed to reduce the overall gain.
• The design procedure is facilitated by plotting constant-gain circles on the Smith chart to
represent loci of ΓS and ΓL that give fixed values of gain (GS and GL ).

1. For Maximum gain – Only Conjugate matching option is available- It results in single
value of ΓS at source side and ΓL at load value
2. For Specified Gain – Constant Gain Circles in ΓS and ΓL Planes – Constant gain is obtained
if the values of ΓS and ΓL are selected on the periphery of the circles
 Constant-Gain Circles
For Specified Gain – Constant Gain Circles in ΓS and ΓL Planes – Constant gain is obtained if
the values of ΓS and ΓL are selected on the periphery of the circles
Consider Unilateral Case

Define normalized gain factors gS and gL as

Then we have that 0 ≤ gS ≤ 1 and 0 ≤ gL ≤ 1

For fixed values of gS and gL, represents circles in the ΓS or ΓL plane.

 Constant-Gain Circles

Solving the above equation

which is the equation of a circle with its center and radius given by

Source Side Constant Gain Circles

Load Side Constant Gain Circles

• Note that when gS (or gL ) = 1 (maximum gain), the radius RS (or RL ) = 0, and the center
reduces to S11* (or S22*), as expected.
• The 0 dB gain circles (GS = 1 or GL = 1) will always pass through the center of the Smith chart
• ΓS and ΓL can be chosen along these circles to provide the desired gains.
• The choices for ΓS and ΓL are not unique, but it makes sense to choose points close to the
center of the Smith chart to minimize mismatch, and thus maximize bandwidth.
 Constant-Gain Circles and Design for Specified Gain

1. Calculate the optimum terminations

2. Determine Gsmax, Glmax, GTUMax in dB
3. Draw the constant gain circles for Gs = 2 dB, 1 dB, 0 dB and -1 dB
4. Design the input matching Network for Gs = 2 dB
 Constant-Gain Circles and Design for Specified Gain

1. Calculate Δ and K

2. As S12 = 0; Transistor is unilateral

 Constant-Gain Circles and Design for Specified Gain

3. Optimum Terminations are

Using Smith Chart

2. As S12 = 0; Transistor is unilateral

 Constant-Gain Circles and Design for Specified Gain

3. Gain Calculation
 Constant-Gain Circles and Design for Specified Gain

4. Constant Gain circle calculation

 Constant-Gain Circles and Design for Specified Gain
5. Plot Constant Gain circles on Smith Chart
 Constant-Gain Circles and
Design for Specified Gain

5. Plot Constant Gain circles on Smith

Chart
 Constant-Gain Circles and Design for Specified Gain
5. Final Circuit Diagram
Constant-Gain Circles and Design for Specified Gain

5. Design Input Matching Network for Gs=2 dB

6. Total gain of amplifier using Gs = 2 dB is

GTU(dB)= Gs(dB) + G0(dB) + Glmax(dB)
GTU = 2 + 12.97 + 0.195 = 15.16 dB
To plot the reflection coefficient using scale

1. Measure the radius of the smith

Chart using scale
2. It is generally 7.5 to 8 cms
3. Take the value of reflection
coefficient and multiply its
magnitude by the measured radius.
4. This will give a value of reflection
coefficient magnitude in cms.
5. Measure that from the center of the
smith chart using scale at the given
angle
 Design for Specified Gain – High Gain Amplifier
Design a microwave amplifier for a power gain of 15 dB at a frequency of 3 GHz. The
selected bipolar transistor has following S parameters
S11 = 0.7∠-155° , S12 = 0, S21 = 4 ∠180° , S22 = 0.51∠-20°
 Design for Specified Gain – High Gain Amplifier
Design a microwave amplifier for a power gain of 15 dB at a frequency of 3 GHz. The
selected bipolar transistor has following S parameters
S11 = 0.7∠-155° , S12 = 0, S21 = 4 ∠180° , S22 = 0.51∠-20°

1. Calculate Δ and K:

Δ = 0.357∠-175°
K = Infinity

As |Δ| < 1 and K > 1, Transistor is

unconditionally stablec

2. S12 = 0, Transistor is unilateral

 Design for Specified Gain – High Gain Amplifier
Design a microwave amplifier for a power gain of 15 dB at a frequency of 3 GHz. The
selected bipolar transistor has following S parameters
S11 = 0.7∠-155° , S12 = 0, S21 = 4 ∠180° , S22 = 0.51∠-20°
3. GT(dB) = Gs(dB) + G0(dB) + GL (dB)

We need GT = 15 dB : Go is constant as it is dependent upon |S21|^2

G0 = 16 = 12.04 dB (3 dB more gain is required)

Required gain is 15 dB which can be realized from source side (Gs) and load side (GL)

4. Determine Gsmax and Glmax

Gsmax = 1/(1- |S11|^2) = 1.96 = 2.92 dB  We can take 2 dB from source (Gs =2 dB)

GLmax = 1/(1- |S22|^2) = 1.35 = 1.308 dB  1 dB gain can be realized from load side (GL = 1 dB)

GT(dB) = Gs(dB) + G0(dB) + GL (dB) = 2 + 12 + 1 = 15 dB

 Design for Specified Gain – High Gain Amplifier
Design a microwave amplifier for a power gain of 15 dB at a frequency of 3 GHz. The
selected bipolar transistor has following S parameters
S11 = 0.7∠-155° , S12 = 0, S21 = 4 ∠180° , S22 = 0.51∠-20°
4. Determine gs, gL, Cgs, Rgs, CgL and RgL

Gs =2 dB = 1.584 gs = Gs/Gsmax = 1.584 / 1.96 = 0.808

Cgs = 0.625 ∠155° Rgs = 0.245 ~ 0.25

GL = 1 dB = 1.258 gL = GL/ GLmax = 1.258 / 1.35 = 0.9318

CgL = 0.483∠20° RgL = 0.1967 ~ 0.2

GT(dB) = Gs(dB) + G0(dB) + GL (dB) = 2 + 12 + 1 = 15 dB

 Design for Specified Gain – High Gain Amplifier
Design a microwave amplifier for a power gain of 15 dB
at a frequency of 3 GHz. The selected bipolar transistor
has following S parameters
S11 = 0.7∠-155° , S12 = 0, S21 = 4 ∠180° ,
S22 = 0.51∠-20°

5. Plot 2 dB and 1 dB gain circles on smith chart

Gs =2 dB Cgs = 0.625 ∠155°

Rgs = 0.245 ~ 0.25

GL = 1 dB CgL = 0.483∠20°
RgL = 0.1967 ~ 0.2
 Design for Specified Gain – High Gain Amplifier
Design a microwave amplifier for a power gain of 15 dB
at a frequency of 3 GHz. The selected bipolar transistor
has following S parameters
S11 = 0.7∠-155° , S12 = 0, S21 = 4 ∠180° ,
S22 = 0.51∠-20°

5. Plot 2 dB and 1 dB gain circles on smith chart

Gs =2 dB Cgs = 0.625 ∠155°

Rgs = 0.245 ~ 0.25

GL = 1 dB CgL = 0.483∠20°
RgL = 0.1967 ~ 0.2

6. Select values of Γs and ΓL

7. Design matching networks

 Noise in Linear Two Ports
• In some amplifiers noise is the main concern.
• However, minimum noise and maximum gain is not possible simultaneously.
• Therefore constant Noise figure circles and constant gain circles are plotted on smith chart
and reflection coefficient can be selected that compromise between noise figure and gain
performance
• In Microwave amplifier, even there is no input signal, a small output voltage is measured.
This small output power is called as Amplifier noise power.

The noise input power is modelled by a source resistor that

produces Johnson or Thermal Noise.
 Noise in Linear Two Ports
The noise power is dependent upon Bandwidth and not on center
frequency. Therefore, it is called as white noise

The noise figure = Total available noise power at output / The available output noise power
due thermal noise produced by the input terminating resistor

Available Gain

The noise figure = Total available signal to noise power ratio at input / Total
available signal to noise power ratio at output
 Noise in Linear Two Ports

Pn1= KTe1B Pn2 = KTe2B

where and Tcas = Te1 + (Te2/GA1)

Noise in Linear Two Ports

Equivalent noise figure of cascaded

multiple stages
 Constant Noise Figure Circles

Where rn is an equivalent noise resistance of

two ports

Normalized source admittance

Normalized source admittance that results in a minimum noise figure

 Constant Noise Figure Circles

Center of the constant noise figure circle

radius of the constant noise figure circle

Constant Noise Figure Circles
Minimum Noise Amplifier
 Minimum Noise Amplifier

1. Calculate Δ and K:

Δ = 0.419∠111.04°
K = 1.012

As |Δ| < 1 and K > 1, Transistor is

unconditionally stable
 Minimum Noise Amplifier

2. Calculate Unilateral Figure of merit ‘U’

U = 0.1853

Error range = -0.147 dB to 0.178 dB

For Minimum Noise :

Γs = Γopt = 0.475∠166°
 Minimum Noise Amplifier

For Minimum Noise :

Γs = Γopt = 0.475∠166°

ΓL = Γout*

Design Matching Networks and calculate gain

 Minimum Noise Amplifier

For Minimum Noise :

Γs = Γopt = 0.475∠166°

ΓL = Γout*

Design Matching Networks and calculate gain

 Minimum Noise Amplifier

For Minimum Noise :

Γs = Γopt = 0.475∠166°

ΓL = Γout*

Calculate gain = GA = Gs + Go + GL = 1.155 + 5.411 + 4.511 = 11.077 dB

 Minimum Noise Amplifier
For Minimum Noise :
Γs = Γopt = 0.475∠166°
ΓL = Γout*
 Minimum Noise Amplifier
Source side matching Network

For Minimum Noise :

Γs = Γopt = 0.475∠166°
ΓL = Γout*
Load side matching Network
Final Circuit

Γs = Γopt = 0.475∠166°
 Low Noise Amplifier Design
Design a low Noise amplifier (LNA) for a noise figure of 3.5 dB and a power gain of 16 dB. A
bipolar transistor is biased at the midrange of Class A amplifier with Vce = 4 V and Icc =
30 mA. The S parameters and noise parameters are
S11 = 0.7∠-155° S12 = 0 S21= 5∠180° S22 = 0.51∠-20°
Γopt = 0.45∠180°, Rn = 4Ω, Fmin = 3 dB
 Low Noise Amplifier Design
Design a low Noise amplifier (LNA) for a noise figure of 3.5 dB and a power gain of 16 dB. A
bipolar transistor is biased at the midrange of Class A amplifier with Vce = 4 V and Icc =
30 mA. The S parameters and noise parameters are
S11 = 0.7∠-155° S12 = 0 S21= 5∠180° S22 = 0.51∠-20°
Γopt = 0.45∠180°, Rn = 4Ω, Fmin = 3 dB

1. Calculate Δ and K:

Δ = 0.357∠-175°
K = Infinity

As |Δ| < 1 and K > 1, Transistor is

unconditionally stable

S12 = 0  Transistor is Unilateral

 Low Noise Amplifier Design
The S parameters and noise parameters are
S11 = 0.7∠-155° S12 = 0 S21= 5∠180° S22 = 0.51∠-20°
Γopt = 0.45∠180°, Rn = 4Ω, Fmin = 3 dB

3. GT(dB) = Gs(dB) + G0(dB) + GL (dB)

We need GT = 16 dB : Go is constant as it is dependent upon |S21|^2

G0 = 25 = 13.97 dB (2 dB more gain is required)

Required gain is 16 dB which can be realized from source side (Gs) and load side (GL)

4. Determine Gsmax and Glmax

Gsmax = 1/(1- |S11|^2) = 1.96 = 2.92 dB  We can take 2 dB from source (Gs =1.22 dB)

GLmax = 1/(1- |S22|^2) = 1.35 = 1.308 dB  1 dB gain can be realized from load side (GL = 0.78 dB)

GT(dB) = Gs(dB) + G0(dB) + GL (dB) = 1.22 + 14 + 0.78 = 16 dB

 Low Noise Amplifier Design
The S parameters and noise parameters are
S11 = 0.7∠-155° S12 = 0 S21= 5∠180° S22 = 0.51∠-20°
Γopt = 0.45∠180°, Rn = 4Ω, Fmin = 3 dB

4. Determine gs, gL, Cgs, Rgs, CgL and RgL

Gs =1.22 dB = 1.324 gs = Gs/Gsmax = 0.6756

Cgs = 0.61 ∠155° Rgs = 0.345

GL = 0.78 dB = 1.2 gL = GL/ GLmax = 0.888

CgL = 0.4632∠20° RgL = 0.2645

GT(dB) = Gs(dB) + G0(dB) + GL (dB) = 1.22 + 14 + 0.78 = 16 dB

 Low Noise Amplifier Design
The S parameters and noise parameters are
S11 = 0.7∠-155° S12 = 0 S21= 5∠180° S22 = 0.51∠-20°
Γopt = 0.45∠180°, Rn = 4Ω, Fmin = 3 dB

Calculate Noise parameters

N = 0.23

CF = 0.365 ∠180

RF = 0.3952
Low Noise Amplifier Design
Constant Noise Figure circle
F = 3.5 dB
CF = 0.365 ∠180
RF = 0.3952

Source Constant Gain circle

Gs = 1.22 dB
Cgs = 0.61 ∠155°
Rgs = 0.345

Load Constant Gain circle

GL = 0.78 dB
CgL = 0.4632∠20°
RgL = 0.2645
Low Noise Amplifier Design
Constant Noise Figure circle
F = 3.5 dB
CF = 0.365 ∠180
RF = 0.3952

Source Constant Gain circle

Gs = 1.22 dB
Cgs = 0.61 ∠155°
Rgs = 0.345

Load Constant Gain circle

GL = 0.78 dB
CgL = 0.4632∠20°
RgL = 0.2645
Low Noise Amplifier
Constant Noise Figure circle
F = 3.5 dB
CF = 0.365 ∠180
RF = 0.3952

Source Constant Gain circle

Gs = 1.22 dB
Cgs = 0.61 ∠155°
Rgs = 0.345

Load Constant Gain circle

GL = 0.78 dB
CgL = 0.4632∠20°
RgL = 0.2645
Low Noise Amplifier Design
Constant Noise Figure circle
F = 3.5 dB
CF = 0.365 ∠180
RF = 0.3952

Source Constant Gain circle

Gs = 1.22 dB
Cgs = 0.61 ∠155°
Rgs = 0.345

Load Constant Gain circle

GL = 0.78 dB
CgL = 0.4632∠20°
RgL = 0.2645
Low Noise Amplifier Final Circuit
 Power Amplifier Design
• Power amplifiers are used in the final stages of radar and radio transmitters to increase the
radiated power level.
• Important considerations for RF and microwave power amplifiers are efficiency, gain,
intermodulation distortion, and thermal effects.
• Single transistors can provide output powers of 10–100 W at UHF frequencies, while
devices at higher frequencies are generally limited to output powers less than 10 W
• So far we have considered only small-signal amplifiers, where the input signal power is low
enough that the transistor can be assumed to operate as a linear device.
• For high input powers transistors do not behave linearly.
• In this case the impedances seen at the input and output of the transistor will depend on
the input power level, and this greatly complicates the design of power amplifiers.
• Power Amplifiers are Large signal amplifiers Power Amplifier Design
which Operates in nonlinear region of VI
characteristics
• Small Signal S parameters can not be used
for power amplifier design of all the classes
other than Class A
• A set of Large signal S parameters is
required however, measurement of Large
signal S parameters is difficult as well as not
properly defined
• Therefore, in most of the cases, the large
signal source and load impedances
(reflection coefficients) are provided
• We will go through two methods
1. modified S parameters 2. Large signal
impedances
 Class A Power Amplifier Design
• In Large signal Class A operation introduces
nonlinearity in the output
• Harmonics of the fundamental frequency
are present at the output
• Power handling capability of power
amplifiers is determined with the help of 1
dB gain compression point.
• 1 dB gain compression point is the power
gain where the nonlinearities reduce power
gain of amplifier by 1 dB over small signal
linear operation.
 Class A Power Amplifier Design
• Po,mds: Minimum detectable output power
• Pi,mds: Minimum detectable input signal
• Dynamic Range (DR) of amplifier is the difference
between P1dB and Po,mds
• DR = P1dB – Po,mds
• DR is the range where the amplifier has linear
power gain

• A typical value of X is 3 dB
 Class A Power Amplifier Design
• Po,mds: Minimum detectable output power
• Pi,mds: Minimum detectable input signal
• Dynamic Range (DR) of amplifier is the difference
between P1dB and Po,mds
• DR = P1dB – Po,mds
• DR is the range where the amplifier has linear
power gain

• A typical value of X is 3 dB
 Characteristics of Power Amplifier
• Po,mds: Minimum detectable output power
• Pi,mds: Minimum detectable input signal
• 1 dB Gain compression point
• Dynamic Range (DR)
• Power Added Efficiency (PAE)
• Drain/Collector Efficiency

• Intermodulation Products and intercept points

• Optimum Loading
 Characteristics of Power Amplifier
• Intermodulation Products and intercept points
• When two or more sinusoidal frequencies are applied to nonlinear amplifier, the output contains
additional frequency components which are called as intermodulation Products.

The third order

intermodulation products
are very closed to
fundamental frequencies
 Characteristics of Power Amplifier
• Optimum Loading
 Class A Power Amplifier Design – The modified S parameter method
• Uses small signal method
• The S parameters change for large signal input as compared to small signal input
• The other S parameters except S21 can be considered same as those for small signal input
• S21 is measured under large signal conditions and considered for design purpose

A certain MESFET is biased for large signal class A operation with the following S parameters
at 5 GHz
S11 = 0.55∠-150° S12 = 0.04∠-20° S21= 3.5∠170° S22 = 0.45∠-30°
The large signal forward transmission coefficient is measured to be S21= 2.8∠180°. Design a
large signal class A amplifier with maximum transducer power gain in a 50 Ω system.
Assume ±0.5 dB error in gain is small enough to justify simplifications. Calculate high power
amplifier gain.
 Class A Power Amplifier Design – The modified S parameter method

A certain MESFET is biased for large signal class A operation with the following S parameters
at 5 GHz
S11 = 0.55∠-150° S12 = 0.04∠-20° S21= 3.5∠170° S22 = 0.45∠-30°
The large signal forward transmission coefficient is measured to be S21= 2.8∠180°. Design a
large signal class A amplifier with maximum transducer power gain in a 50 Ω system.
Assume ±0.5 dB error in gain is small enough to justify simplifications. Calculate high power
amplifier gain.

Given:
Small signal S Parameters
Large signal S21
Frequency, impedance, error range
 Class A Power Amplifier Design – The modified S parameter method
A certain MESFET is biased for large signal class A operation with the following S parameters
at 5 GHz
S11 = 0.55∠-150° S12 = 0.04∠-20° S21= 3.5∠170° S22 = 0.45∠-30°
The large signal forward transmission coefficient is measured to be S21= 2.8∠180°. Design a
large signal class A amplifier with maximum transducer power gain in a 50 Ω system.
Assume ±0.5 dB error in gain is small enough to justify simplifications. Calculate high power
amplifier gain.

Given:
Small signal S Parameters
Large signal S21
Frequency, impedance, error range

Use Large signal S21 for all the calculations. Apply the same method we used for small
signal design
 Class A Power Amplifier Design – The modified S parameter method
A certain MESFET is biased for large signal class A operation with the following S parameters
at 5 GHz
S11 = 0.55∠-150° S12 = 0.04∠-20° S21= 2.8∠180° S22 = 0.45∠-30°

1. Calculate Δ and K:

Δ = 0.147∠164.92°
K = 2.3

As |Δ| < 1 and K > 1, Transistor is unconditionally stable

2. Calculate U and error range

U = 0.05
-0.21 dB < GT/GTU < 0.44 dB
The error range is within the specified limit so use unilateral assumptions
 Class A Power Amplifier Design – The modified S parameter method
A certain MESFET is biased for large signal class A operation with the following S parameters
at 5 GHz
S11 = 0.55∠-150° S12 = 0.04∠-20° S21= 2.8∠180° S22 = 0.45∠-30°

3. Calculate gain GTUmax

Gsmax = 1.43 = 1.564 dB
G0 = 7.84 = 8.94 dB
Glmax = 1.25 = 0.98 dB

GTUmax = 11.48 dB

4. Determine terminations
Γs = S11* = 0.55 ∠150° , ΓL = S22* = 0.45∠30°
4. Determine terminations
Γs = S11* = 0.55 ∠150° ,
ΓL = S22* = 0.45∠30°

Ys
4. Determine terminations
Γs = S11* = 0.55 ∠150° ,
ΓL = S22* = 0.45∠30°
5. Final Circuit Diagram
Γs = S11* = 0.55 ∠150°,
ΓL = S22* = 0.45∠30°
Given:
S Parameters
F=2.3 GHz
Pout = 10 W
Large signal source and load impedances Zsp and ZLp
Gp = 16.4 dB, Efficiency = 26%
1. Calculate Δ and K:
Δ = 0.579∠-8.133°

2. Calculate the large signal from source and load reflection coefficients
Use Z – Z0 / Z + Z0
3. Calculate U and determine error range:
U = = 0.1697
Error Range 0.73 = -1.36 dB < GT/GTU < 1.45 = 1.61 dB
Bilateral Transistor
4. Calculate the source and load reflection coefficients using Scattering parameters

Note that these values are approximately equal to the large-signal values ΓSP and ΓLP, but
not exactly, due to the fact that the scattering parameters used to calculate ΓS and ΓL do not
apply for large power levels. We should use the large signal reflection coefficients to design
the input and output matching networks.
5. For an output power of 10 W, the required input drive power is

Pin = Pout(dBm) − G(dB) = 10 log(10,000) − 16.4 = 23.6 dBm = 229 mW

6. The DC input power can be found from the drain efficiency as PDC = Pout/η = 38.5 W,

so the DC drain current is ID = PDC/VDS = 1.37 A.

The power added efficiency of the amplifier can be found

ηPAE = (Pout − Pin)/ PDC = (10.0 − 0.229)/ 38.5 = 25%.

7. Design input and output matching network
 Power Amplifier Design
Design a power amplifier at 900 MHz using a NPN Silicon BJT with an output power of 3 W.
The small signal S parameters are
S11 = 0.94∠164° S1 2 = 0.031∠59° S21= 1.222∠43° S22 = 0.57∠-165°
The large signal input and output impedances are Zin = 1.2 + j3.5 Ω and Zout = 9 + j14.5 Ω.
a. Use given S parameters to compute ΓS and ΓL for conjugate matching and compare the
actual large signal values of Γsp and Γlp
b. Design a large signal amplifier with maximum transducer power gain in a 50 Ω system.
c. Find the required input power and compute the PAE

Given:
Small signal S Parameters
Frequency, impedance, output power, Zin, Zout
 Power Amplifier Design
Design a power amplifier at 900 MHz using a NPN Silicon BJT with an output power of 3 W.
The small signal S parameters are
S11 = 0.94∠164° S1 2 = 0.031∠59° S21= 1.222∠43° S22 = 0.57∠-165°
The large signal input and output impedances are Zin = 1.2 + j3.5 Ω and Zout = 9 + j14.5 Ω.
a. Use given S parameters to compute ΓS and ΓL for conjugate matching and compare the
actual large signal values of Γsp and Γlp

Δ = 0.546∠-4.87° K = 1.177 Unconditionally stable

Calculate ΓIN = ZIN – Z0 / ZIN + Z0 = 0.953∠172°

ΓOUT = ZOUT – Z0 / ZOUT + Z0 = 0.716∠-147°
 Power Amplifier Design
Design a power amplifier at 900 MHz using a NPN Silicon BJT with an output power of 3 W.
The small signal S parameters are
S11 = 0.94∠164° S1 2 = 0.031∠59° S21= 1.222∠43° S22 = 0.57∠-165°
The large signal input and output impedances are Zin = 1.2 + j3.5 Ω and Zout = 9 + j14.5 Ω.

Large Signal Values: Calculate ΓIN = ZIN – Z0 / ZIN + Z0 = 0.953∠172°

ΓOUT = ZOUT – Z0 / ZOUT + Z0 = 0.716∠-147°

These values are approximately equal to large signal values but not exactly equal because
they are calculated using small signal S parameters

ΓS = ΓIN* = 0.953∠-172° ΓL = ΓOUT*= 0.716∠147°

Design Matching network
 Power Amplifier Design
Design a power amplifier at 900 MHz using a NPN Silicon BJT with an output power of 3 W.
The small signal S parameters are
S11 = 0.94∠164° S1 2 = 0.031∠59° S21= 1.222∠43° S22 = 0.57∠-165°
The large signal input and output impedances are Zin = 1.2 + j3.5 Ω and Zout = 9 + j14.5 Ω.

For the output Power of 3W the required input power is

PIN(dBm) = Pout (dBm) – Gp (dB)
= 10 log (3000) – 12
= 22.8 dBm = 189 mW

Power added efficiency (PAE) = (Pout – Pin) / PDC = (3-0.189)/(24X0.5) = 23.4 %

 Power Amplifier Design
Design a power amplifier at 900 MHz using a NPN Silicon BJT with an output power of 3 W.
The small signal S parameters are
S11 = 0.94∠164° S1 2 = 0.031∠59° S21= 1.222∠43° S22 = 0.57∠-165°
The large signal input and output impedances are Zin = 1.2 + j3.5 Ω and Zout = 9 + j14.5 Ω.

For the output Power of 3W the required input power is

PIN(dBm) = Pout (dBm) – Gp (dB)
= 10 log (3000) – 12
= 22.8 dBm = 189 mW

Power added efficiency (PAE) = (Pout – Pin) / PDC = (3-0.189)/(24X0.5) = 23.4 %