VDS

1700 V

C2M1000170D ID @ 25˚C 5.0 A

RDS(on) 1.0 Ω
Silicon Carbide Power MOSFET
TM
C2M MOSFET Technology
N-Channel Enhancement Mode

Features Package

• High Speed Switching with Low Capacitances

• High Blocking Voltage with Low RDS(on)
• Easy to Parallel and Simple to Drive
• Ultra-low Drain-gate capacitance
• Halogen Free, RoHS Compliant

Benefits
TO-247-3
• Higher System Efficiency
• Increased System Switching Frequency
• Reduced Cooling Requirements
• Increased System Reliability

Applications

• Auxiliary Power Supplies

• Switch Mode Power Supplies
• High-voltage Capacitive Loads Part Number Package

C2M1000170D TO-247-3

Maximum Ratings (TC = 25 ˚C unless otherwise specified)

Symbol Parameter Value Unit Test Conditions Note

VDSmax Drain - Source Voltage 1700 V VGS = 0 V, ID = 100 μA

VGSmax Gate - Source Voltage -10/+25 V Absolute maximum values

VGSop Gate - Source Voltage -5/+20 V Recommended operational values

5.0 VGS = 20 V, TC = 25˚C Fig. 19

ID Continuous Drain Current A
3.5 VGS = 20 V, TC = 100˚C

ID(pulse) Pulsed Drain Current 6.0 A Pulse width tP limited by Tjmax Fig. 22

PD Power Dissipation 69 W TC=25˚C, TJ = 150 ˚C Fig. 20

-55 to
TJ , Tstg Operating Junction and Storage Temperature
+150
˚C

TL Solder Temperature 260 ˚C 1.6mm (0.063”) from case for 10s

1 Nm
Md Mounting Torque
8.8 lbf-in
M3 or 6-32 screw

1 C2M1000170D Rev. E, 10-2015

Electrical Characteristics (TC = 25˚C unless otherwise specified)

Symbol Parameter Min. Typ. Max. Unit Test Conditions Note

V(BR)DSS Drain-Source Breakdown Voltage 1700 V VGS = 0 V, ID = 100 μA
2.0 2.6 4 V VDS = VGS, ID = 0.5 mA
VGS(th) Gate Threshold Voltage Fig. 11
2.1 V VDS = VGS, ID = 0.5 mA, TJ = 150 °C

IDSS Zero Gate Voltage Drain Current 1 100 μA VDS = 1.7 kV, VGS = 0 V

IGSS Gate-Source Leakage Current 250 nA VGS = 20 V, VDS = 0 V

1.0 1.4 VGS = 20 V, ID = 2 A

RDS(on) Drain-Source On-State Resistance Ω Fig. 4,5,6
2.0 VGS = 20 V, ID = 2 A, TJ = 150 °C

0.82 VDS= 20 V, IDS= 2 A

gfs Transconductance S Fig. 7
0.81 VDS= 20 V, IDS= 2 A, TJ = 150 °C

Ciss Input Capacitance 200

VGS = 0 V
Coss Output Capacitance 12 pF Fig. 17,18
VDS = 1000 V
Crss Reverse Transfer Capacitance 1.3 f = 1 MHz
Eoss Coss Stored Energy 7 μJ VAC = 25 mV Fig 16

EON Turn-On Switching Energy 40 VDS = 1.2 kV, VGS = -5/20 V

μJ ID = 2 A, RG(ext) = 2.5 Ω, Fig. 26
EOFF Turn Off Switching Energy 15 L= 1478 μH, TJ = 150 °C

td(on) Turn-On Delay Time 6

VDD = 1.2 kV, VGS = -5/20 V
tr Rise Time 10.5
ID = 2 A, RG(ext) = 2.5 Ω, RL = 600 Ω
ns Fig. 27
td(off) Turn-Off Delay Time 11 Timing relative to VDS
Per IEC60747-8-4 pg 83
tf Fall Time 60

RG(int) Internal Gate Resistance 24.8 Ω f = 1 MHz, VAC = 25 mV

Qgs Gate to Source Charge 4.7

VDS = 1.2 kV, VGS = -5/20 V
Qgd Gate to Drain Charge 5.4 nC ID = 2 A Fig. 12
Per IEC60747-8-4 pg 21
Qg Total Gate Charge 13

Reverse Diode Characteristics

Symbol Parameter Typ. Max. Unit Test Conditions Note

3.8 V VGS = - 5 V, ISD = 1 A, TJ = 25 °C
Fig. 8, 9,
VSD Diode Forward Voltage 10
3.3 V VGS = - 5 V, ISD = 1 A, TJ = 150 °C

IS Continuous Diode Forward Current 4 A TC= 25 °C Note 1

trr Reverse Recovery Time 20 ns VGS = - 5 V, ISD = 2 A TJ = 25 °C

VR = 1.2 kV
Qrr Reverse Recovery Charge 24 nC Note 1
dif/dt = 1200 A/µs
Irrm Peak Reverse Recovery Current 6.5 A
Note (1): When using SiC Body Diode the maximum recommended VGS = -5V

Thermal Characteristics

Symbol Parameter Typ. Max. Unit Test Conditions Note

RθJC Thermal Resistance from Junction to Case 1.7 1.8
°C/W Fig. 21
RθJC Thermal Resistance from Junction to Ambient 40

2 C2M1000170D Rev. E, 10-2015

Typical Performance

6 6
Conditions: VGS = 20 V Conditions: VGS = 20 V
TJ = -55 °C TJ = 25 °C
tp < 200 µs VGS = 18 V tp < 200 µs VGS = 18 V
5 5
Drain-Source Current, IDS (A)

Drain-Source Current, IDS (A)

VGS = 16 V VGS = 16 V
4 4 VGS = 14 V

VGS = 14 V
3 3
VGS = 12 V

2 2
VGS = 12 V VGS = 10 V

1 1
VGS = 10 V

0 0
0 4 8 12 16 20 0 4 8 12 16 20
Drain-Source Voltage, VDS (V) Drain-Source Voltage, VDS (V)

Figure 1. Output Characteristics TJ = -55 °C Figure 2. Output Characteristics TJ = 25 °C

6 2.5
Conditions: Conditions:
VGS = 20 V
TJ = 150 °C IDS = 2 A
VGS = 18 V
tp < 200 µs VGS = 20 V
5
VGS = 16 V 2.0 tp < 200 µs
VGS = 14 V
Drain-Source Current, IDS (A)

On Resistance, RDS On (P.U.)

4 VGS = 12 V
1.5
VGS = 10 V
3

1.0
2

0.5
1

0 0.0
0 4 8 12 16 20 -50 -25 0 25 50 75 100 125 150
Drain-Source Voltage, VDS (V) Junction Temperature, TJ (°C)

Figure 3. Output Characteristics TJ = 150 °C Figure 4. Normalized On-Resistance vs. Temperature

3.5 3.5
Conditions: Conditions:
VGS = 20 V IDS = 2 A
3.0 tp < 200 µs 3.0 tp < 200 µs
On Resistance, RDS On (Ohms)

On Resistance, RDS On (Ohms)

2.5 2.5
TJ = 150 °C
2.0 2.0
VGS = 14 V
1.5 1.5
VGS = 16 V
TJ = 25 °C VGS = 18 V
1.0 1.0

TJ = -55 °C VGS = 20 V
0.5 0.5

0.0 0.0
0 1 2 3 4 5 6 -50 -25 0 25 50 75 100 125 150
Drain-Source Current, IDS (A) Junction Temperature, TJ (°C)

Figure 5. On-Resistance vs. Drain Current Figure 6. On-Resistance vs. Temperature

For Various Temperatures For Various Gate Voltage

3 C2M1000170D Rev. E, 10-2015

Typical Performance

5 -6 -5 -4 -3 -2 -1 0
Conditions: 0
VDS = 20 V Condition:
tp < 200 µs VGS = -5 V TJ = -55 °C
4 VGS = 0 V tp < 200 µs
TJ = 150 °C
Drain-Source Current, IDS (A)

-1

Drain-Source Current, IDS (A)

3 VGS = -2 V
TJ = 25 °C -2

2 TJ = -55 °C
-3

1
-4

0
0 2 4 6 8 10 12 14 16
-5
Gate-Source Voltage, VGS (V) Drain-Source Voltage, VDS (A)

Figure 7. Transfer Characteristic for

Various Junction Temperatures Figure 8. Body Diode Characteristic at -55 ºC
-6 -5 -4 -3 -2 -1 0 -6 -5 -4 -3 -2 -1 0
0 0
Condition: Condition:
VGS = -5 V TJ = 25 °C VGS = -5 V TJ = 150 °C
tp < 200 µs VGS = 0 V
VGS = 0 V tp < 200 µs
-1 -1
Drain-Source Current, IDS (A)

Drain-Source Current, IDS (A)

VGS = -2 V
VGS = -2 V
-2 -2

-3 -3

-4 -4

-5 -5
Drain-Source Voltage, VDS (A) Drain-Source Voltage, VDS (A)

Figure 9. Body Diode Characteristic at 25 ºC Figure 10. Body Diode Characteristic at 150 ºC
3.5 25
Conditions
Conditions Conditions:
VVDSDS==V10
GS V IDS = 2 A
3.0 IDS==0.5
IDS 0.5mAmA
20 IGS = 100 mA
VDS = 1200 V
TJ = 25 °C
2.5
Gate-Source Voltage, VGS (V)
Threshold Voltage, Vth (V)

15
2.0
10
1.5

5
1.0

0.5 0

0.0 -5
-50 -25 0 25 50 75 100 125 150 0 2 4 6 8 10 12 14
Junction Temperature TJ (°C) Gate Charge, QG (nC)

Figure 11. Threshold Voltage vs. Temperature Figure 12. Gate Charge Characteristics

4 C2M1000170D Rev. E, 10-2015

Typical Performance

-5 -4 -3 -2 -1 0 -5 -4 -3 -2 -1 0
0 0
Conditions: VGS = 0 V Conditions: VGS = 0 V
TJ = -55 °C TJ = 25 °C
tp < 200 µs VGS = 5 V tp < 200 µs
VGS = 5 V
-1 -1
Drain-Source Current, IDS (A)

Drain-Source Current, IDS (A)

VGS = 10 V
-2 -2
VGS = 10 V
VGS = 15 V

VGS = 15 V -3 -3
VGS = 20 V

VGS = 20 V
-4 -4

-5 -5
Drain-Source Voltage, VDS (V) Drain-Source Voltage, VDS (V)

Figure 13. 3rd Quadrant Characteristic at -55 ºC Figure 14. 3rd Quadrant Characteristic at 25 ºC

-5 -4 -3 -2 -1 0 8
0
Conditions: VGS = 0 V 7
TJ = 150 °C VGS = 5 V
tp < 200 µs
-1 6
Drain-Source Current, IDS (A)

Stored Energy, EOSS (µJ)

VGS = 10 V 5

VGS = 15 V -2
4
VGS = 20 V
3
-3
2

-4 1

0
-5 0 200 400 600 800 1000 1200
Drain-Source Voltage, VDS (V) Drain to Source Voltage, VDS (V)

Figure 15. 3rd Quadrant Characteristic at 150 ºC Figure 16. Output Capacitor Stored Energy

1000 1000
Conditions: Conditions:
TJ = 25 °C TJ = 25 °C
VAC = 25 mV VAC = 25 mV
Ciss f = 1 MHz Ciss f = 1 MHz

100 100
Capacitance (pF)

Capacitance (pF)

Coss

Coss
10 10

Crss
Crss
1 1
0 50 100 150 200 0 200 400 600 800 1000
Drain-Source Voltage, VDS (V) Drain-Source Voltage, VDS (V)

Figure 17. Capacitances vs. Drain-Source Figure 18. Capacitances vs. Drain-Source
Voltage (0-200 V) Voltage (0-1000 V)

5 C2M1000170D Rev. E, 10-2015

Typical Performance
6 80
Conditions: Conditions:
TJ ≤ 150 °C TJ ≤ 150 °C
Drain-Source Continous Current, IDS (DC) (A)

70
5

Maximum Dissipated Power, Ptot (W)

60
4
50

3 40

30
2

20
1
10

0 0
-55 -30 -5 20 45 70 95 120 145 -55 -30 -5 20 45 70 95 120 145
Case Temperature, TC (°C) Case Temperature, TC (°C)

Figure 19. Continuous Drain Current Derating vs. Figure 20. Maximum Power Dissipation Derating vs.
Case Temperature Case Temperature
10.00

1 0.5
Junction To Case Impedance, ZthJC (oC/W)

10 µs
Limited by RDS On
0.3 100 µs
Drain-Source Current, IDS (A)

1 ms

1.00
0.1
100E-3 100 ms
0.05

0.02
SinglePulse
0.01
0.10
10E-3

Conditions:
TC = 25 °C
D = 0,
Parameter: tp
0.01
1E-3
0.1 1 10 100 1000
1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1
Time, tp (s) Drain-Source Voltage, VDS (V)

Figure 21. Transient Thermal Impedance

Figure 22. Safe Operating Area
(Junction - Case)
120 80
Conditions: Conditions:
TJ = 25 °C TJ = 25 °C
VDD = 1200 V 70 VDD = 900 V
100
RG(ext) = 2.5 Ω RG(ext) = 2.5 Ω
VGS = -5/+20 V VGS = -5/+20 V
60
FWD = C2M1000170D ETotal FWD = C2M1000170D
80 L = 1478 μH L = 1478 μH ETotal
50
Switching Loss (uJ)

Switching Loss (uJ)

60 40
EOn
EOn
30
40

20
EOff EOff
20
10

0 0
0 1 2 3 4 5 6 0 1 2 3 4 5 6
Drain to Source Current, IDS (A) Drain to Source Current, IDS (A)

Figure 23. Clamped Inductive Switching Energy vs. Figure 24. Clamped Inductive Switching Energy vs.
Drain Current (VDD = 1200 V) Drain Current (VDD = 900 V)

6 C2M1000170D Rev. E, 10-2015

Typical Performance

120 100
Conditions: Conditions:
TJ = 25 °C IDS = 2 A
VDD = 1200 V VDD = 1200 V
100 RG(ext) = 2.5 Ω
IDS = 2 A 80
VGS = -5/+20 V ETotal VGS = -5/+20 V
FWD = C2M1000170D FWD = C2M1000170D
80 L = 1478 μH L = 1478 μH
Switching Loss (uJ)

Switching Loss (uJ)

60 ETotal
EOn
60
EOn
40
40

EOff 20 EOff
20

0 0
0 10 20 30 40 50 60 -50 -25 0 25 50 75 100 125 150
External Gate Resistor RG(ext) (Ohms) Junction Temperature, TJ (°C)

Figure 26. Clamped Inductive Switching Energy vs.

Figure 25. Clamped Inductive Switching Energy vs. RG(ext)
Temperature
70
Conditions:
TJ = 25 °C tf
60 VDD = 1200 V
RL = 600 Ω
VGS = -5V/+20 V
50

40
Time (ns)

30
tr
20
td (off)
10
td (on)

0
0 10 20 30 40 50
External Gate Resistor, RG(ext) (Ohms)

Figure 27. Switching Times vs. RG(ext) Figure 28. Switching Times Definition

7 C2M1000170D Rev. E, 10-2015

Test Circuit Schematic

Q1
L=1478 uH 2.5Ω

C2M1000170D
VGS= - 5V
VDC CDC=42.3 uF

Q2
RG
C2M1000170D

Figure 29. Clamped Inductive Switching

Waveform Test Circuit

ESD Ratings

ESD Test Total Devices Sampled Resulting Classification

ESD-HBM All Devices Passed 4000V 3A (>4000V)

ESD-MM All Devices Passed 200V A (>200V)

ESD-CDM All Devices Passed 1000V IV (>1000V)

8 C2M1000170D Rev. E, 10-2015

 Package Dimensions
Inches Millimeters
Package TO-247-3 POS
Min Max Min Max
A .190 .205 4.83 5.21
A1 .090 .100 2.29 2.54
A2 .075 .085 1.91 2.16
b .042 .052 1.07 1.33
b1 .075 .095 1.91 2.41
b2 .075 .085 1.91 2.16
b3 .113 .133 2.87 3.38
b4 .113 .123 2.87 3.13
c .022 .027 0.55 0.68
D .819 .831 20.80 21.10
D1 .640 .695 16.25 17.65
D2 .037 .049 0.95 1.25
E .620 .635 15.75 16.13
E1 .516 .557 13.10 14.15
E2 .145 .201 3.68 5.10
E3 .039 .075 1.00 1.90
E4 .487 .529 12.38 13.43
e .214 BSC 5.44 BSC
N 3 3
L .780 .800 19.81 20.32
T U Pinout Information: L1 .161 .173 4.10 4.40
ØP .138 .144 3.51 3.65
• Pin 1 = Gate
• Pin 2, 4 = Drain Q .216 .236 5.49 6.00

V W • Pin 3 = Source S .238 .248 6.04 6.30

T 9˚ 11˚ 9˚ 11˚
U 9˚ 11˚ 9˚ 11˚
V 2˚ 8˚ 2˚ 8˚
W 2˚ 8˚ 2˚ 8˚

Recommended Solder Pad Layout

Part Number Package Marking

C2M1000170D TO-247-3 C2M1000170

TO-247-3

9 C2M1000170D Rev. E, 10-2015

Notes

• RoHS Compliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the
threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/
EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or
from the Product Documentation sections of www.cree.com.

• REACh Compliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA)
has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree represen-
tative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is
also available upon request.

• This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body
nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited
to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical
equipment, aircraft navigation or communication or control systems, air traffic control systems.

Related Links

• C2M PSPICE Models: http://wolfspeed.com/power/tools-and-support

• SiC MOSFET Isolated Gate Driver reference design: http://wolfspeed.com/power/tools-and-support

• SiC MOSFET Evaluation Board: http://wolfspeed.com/power/tools-and-support

• 60W Auxiliary power supply reference design: http://wolfspeed.com/power/tools-and-support

Cree, Inc.
4600 Silicon Drive
Copyright © 2015 Cree, Inc. All rights reserved. Durham, NC 27703
The information in this document is subject to change without notice. USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. www.cree.com/power

10 C2M1000170D Rev. E, 10-2015