High Voltage NPN Power Transistor: Features
High Voltage NPN Power Transistor: Features
High Voltage NPN Power Transistor: Features
Features
■ High voltage capability
■ High DC current gain
■ Minimum lot-to-lot spread for reliable operation
Applications
■ Switching mode power supply
■ Battery charger
TO-92 TO-92AP
Description
The device is manufactured using high voltage
multi epitaxial planar technology for high switching Figure 1. Internal schematic diagram
speeds and high voltage withstand capability. The
device is designed for use in SMPS and battery
charger.
1 Electrical characteristics
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STX616 STX616-AP Electrical characteristics
2 Electrical characteristics
Collector-emitter
VCE(sus) (1) sustaining voltage IC = 10mA 500 V
(IB = 0)
Emitter-base voltage
VEBO IE = 1mA 12 V
(IC = 0)
IC = 500µA VCE = 2V 17
IC = 200mA V CE = 5V 25
hFE (1) DC current gain
IC = 500mA V CE = 5V 12
IC = 1.5A VCE = 5V 4
RESISTIVE LOAD
ton Turn-on time VCC = 250V IC = 250mA 0.2 µs
ts Storage time IB1 = 65mA IB2 = -130mA 5 µs
tf Fall time 0.65 µs
RESISTIVE LOAD
ton Turn-on time VCC = 250V IC = 0.8A 1 µs
ts Storage time IB1 = 160mA IB2 = -0.4A 2.5 µs
tf Fall time 0.35 µs
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Package mechanical data STX616 STX616-AP
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STX616 STX616-AP Package mechanical data
mm.
DIM.
MIN. TYP MAX.
A 4.32 4.95
b 0.36 0.51
D 4.45 4.95
E 3.30 3.94
e 2.41 2.67
e1 1.14 1.40
L 12.70 15.49
R 2.16 2.41
S1 0.92 1.52
W 0.41 0.56
V 5O
0102782 C
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Package mechanical data STX616 STX616-AP
mm.
DIM.
MIN. TYP MAX.
A1 4.80
T 3.80
T1 1.60
T2 2.30
d 0.48
P0 12.50 12.70 12.90
P2 5.65 6.35 7.05
F1,F2 2.44 2.54 2.94
delta H -2.00 2.00
W 17.50 18.00 19.00
W0 5.70 6.00 6.30
W1 8.50 9.00 9.25
W2 0.50
H 18.50 20.50
H0 15.50 16.00 16.50
H1 25.00
D0 3.80 4.00 4.20
t 0.90
L 11.00
I1 3.00
delta P -1.00 1.00
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STX616 STX616-AP Revision history
4 Revision history
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STX616 STX616-AP
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