SCALE Family Controlling SiC MOSFET Power Switches with SCALE-2 and SCALE-2+ Gate Drivers Cores and SCALE-iDriver Gate Driver ICs
Abstract Besides driving conventional Si-based power side, which is derived from an isolated DC/DC devices like IGBTs and MOSFETs, which require converter (Vtot is the applied voltage between turn-on and turn-off gate voltages of 15 V / -10 V pins VISOx / VISO and COMx / COM in Figure 2). and 10 V through 20 V / 0 V respectively (1), From this unipolar voltage a positive and SCALE™-2 and SCALE-2+ gate driver cores plus negative voltage partition is generated with the SCALE-iDriver™ gate driver ICs are also able to help of an internal VEE-regulator. This regulator drive SiC MOSFET power switches. However, SiC generates a fixed 15 V voltage (VVISO) between switches often require turn-on and turn-off voltage VISOx / VISO and the emitter (or source) levels which are different from those required by potential (pin VEx / VEE). The negative voltage Si-based devices. between COMx / COM and the emitter (or This application note discusses procedures to source) amounts to: optimize use SCALE gate drivers with SiC MOSFET 𝑉𝑉𝐶𝐶𝐶𝐶𝐶𝐶 = 𝑉𝑉𝑉𝑉𝑉𝑉𝑉𝑉𝑉𝑉 − 𝑉𝑉𝑡𝑡𝑡𝑡𝑡𝑡 switches. Two gate driver families, 2SC0106T and 2SC0108T, are not discussed.
Gate Turn-On and Turn-Off
Voltages SiC MOSFET switches from different suppliers and of different generations have different requirements for gate turn-on and turn-off voltage levels. Some devices are able to operate with 15 V / -10 V while others, for example, operate at 19 V / -6 V. Furthermore, some devices require a regulated turn-on voltage while others need a regulated negative turn-off voltage to ensure that they do not exceed the gate-source safe operating area as given in the respective data sheets Figure 1. Voltage Partitioning (example for +15 V / -10 V Gate Turn-On / Off Voltages). (typically, only one voltage can be regulated, while the other depends on the actual load conditions). The voltage VCOM is not regulated and has its To adjust SCALE gate drivers to the different maximum negative value under no-load conditions. requirements, the control of the voltage With increasing load, the voltage shifts towards partitioning for the positive and negative voltage the voltage at pin VEx / VEE as stated in the rails related to the gate turn-on and turn-off levels respective data sheets of the SCALE gate driver. must be overruled. Responsible for the control of For gate voltage requirements other than those the voltage partitioning is the so-called VEE- typically used for IGBT switches, the internal VEE- regulator. regulator should be decoupled. Additional circuitry is required to establish the desired voltage levels. VEE-Regulator All SCALE gate drivers within the scope of this document are able to operate from a unipolar supply voltage Vtot (Figure 1) for the secondary-
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Figure 2. Pinning of Different SCALE Gate Drivers with Marked VEx / VEE Pins (Gate Driver Cores 2SC0115T and 2SC0435T and Driver IC SID1182K).
VEE-Regulator for SiC MOSFET
Switches The basic principle for a substitution of the internal VEE-regulator of the SCALE gate drivers is described in the following procedure: • Do not connect the VEx pin for SCALE-2 and SCALE-2+ gate drivers. When using Figure 3. VEE-Regulator Capacitor Connection for the the SCALE-iDriver gate driver, connect 100 SCALE-iDriver IC. nF capacitors between the VISO and VEE pin and between VEE and COM pins (refer example for a regulated negative voltage rail using to Figure 3). No other VEE pin a shunt regulator S1. modifications are required. Note: In general shunt regulators provide a more • A voltage divider between VISO pin and stable voltage than Zener diodes across load and COM pin must to be created. To achieve temperature. this, either a combination of a Zener diode Details of both circuits are described in the and a series resistor, or a shunt regulator following sections. can be used to establish a regulated voltage. Note that a two resistor voltage Common for both designs is the setting of the divider is not suitable, as this would not buffer capacitors C3 and C4. These should be regulate either the positive or negative rail. selected according to the data sheet / application manual of the selected gate driver. • An impedance transformer (IC1 in Figure 4 and Figure 5) is placed between the Example: midpoint of the voltage divider and the Consider the case where the data sheet of a SiC new emitter (or source) reference VEE* to MOSFET power module states a (total) gate provide sufficient current sink and charge QG of 1.4 µC. The following minimum total sourcing to regulate the voltage rails. capacitances (including those already used in the Figure 4 shows an example of a regulated positive driver core) must be used for a 2SC0435T SCALE driver: voltage rail using a combination of a Zener diode 3 µ𝐹𝐹 3 µ𝐹𝐹 D1 and series resistor R2. Figure 5 shows an 𝐶𝐶3 = 𝐶𝐶4 = 𝑄𝑄𝐺𝐺 × = 1.4 µ𝐶𝐶 × = 4.2 µ𝐹𝐹 1 µ𝐶𝐶 1 µ𝐶𝐶
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If the given gate charge is not referenced to the
voltage level of Vtot, a conversion factor should be used. For example, if the gate charge is given in the data sheet at a voltage of 30 V and Vtot is set to 25 V the conversion factor is 0.83 (this conversion factor is based on a simple interpolation using a linear calculation, i.e. it disregards any potential effects of the Miller capacitance): 25 𝑉𝑉 3 µ𝐹𝐹 𝐶𝐶3 = 𝐶𝐶4 = × 1.4 µ𝐶𝐶 × = 0.83 × 4.2 µ𝐹𝐹 = 3.5 µ𝐹𝐹 30 𝑉𝑉 1 µ𝐶𝐶 Figure 4. VEE-Regulator for SiC MOSFET Switches with Regulated Positive Rail Regulated Positive Rail.
Referring to Figure 4, the positive rail voltage VVISO 𝑅𝑅3
𝑉𝑉𝐶𝐶𝐶𝐶𝐶𝐶 = −2.495 𝑉𝑉 × �1 + � is calculated using the following formula: 𝑅𝑅4 𝑉𝑉𝑉𝑉𝑉𝑉𝑉𝑉𝑉𝑉 = 𝑉𝑉𝑍𝑍(𝐷𝐷1) , So, the positive rail voltage VVISO is determined by:
where VZ(D1) is the nominal Zener voltage of the 𝑉𝑉𝑉𝑉𝑉𝑉𝑉𝑉𝑉𝑉 = 𝑉𝑉𝐶𝐶𝐶𝐶𝐶𝐶 + 𝑉𝑉𝑡𝑡𝑡𝑡𝑡𝑡 diode D1. To achieve good results the following settings Accordingly, the negative rail voltage VCOM is should be selected in accordance to the data sheet determined by: and application notes of the shunt regulator S1:
𝑉𝑉𝐶𝐶𝐶𝐶𝐶𝐶 = 𝑉𝑉𝑉𝑉𝑉𝑉𝑉𝑉𝑉𝑉 − 𝑉𝑉𝑡𝑡𝑡𝑡𝑡𝑡 • Current IR2 should be set in the range of
1 mA to 3 mA To achieve good results, the following settings should be selected: • As guidance, the current through the resistors R3 and R4 should be in the range • Current ID1 should be set in the range of of 0.15 mA to 0.30 mA 4 mA to 6 mA to operate the diode in the linear region • Current IS1 must be larger than 0.6 mA Example for 18 V / -7 V: Example for 20 V / -5 V: 𝑉𝑉𝑉𝑉𝐼𝐼𝑆𝑆𝑆𝑆 = 𝑉𝑉𝑍𝑍(𝐷𝐷1) = 18 𝑉𝑉, e.g. BZX84-A18 Zener diode 𝑅𝑅3 𝑉𝑉𝐶𝐶𝐶𝐶𝐶𝐶 = 𝑉𝑉𝑉𝑉𝑉𝑉𝑉𝑉𝑉𝑉 − 𝑉𝑉𝑡𝑡𝑡𝑡𝑡𝑡 = 18 𝑉𝑉 − 25 𝑉𝑉 = −7 𝑉𝑉 𝑉𝑉𝐶𝐶𝐶𝐶𝐶𝐶 = −2.495 𝑉𝑉 × �1 + � 𝑅𝑅4 |𝑉𝑉𝐶𝐶𝐶𝐶𝐶𝐶 | 7 𝑉𝑉 15 𝑘𝑘Ω 𝑅𝑅2 = = = 1.4 𝑘𝑘Ω 𝑉𝑉𝐶𝐶𝐶𝐶𝐶𝐶 = −2.495 𝑉𝑉 × �1 + � = −5 𝑉𝑉 𝐼𝐼𝐷𝐷1 5 𝑚𝑚𝑚𝑚 15 𝑘𝑘Ω The voltage VCOM has its maximum negative value 𝑉𝑉𝑉𝑉𝑉𝑉𝑉𝑉𝑉𝑉 = 𝑉𝑉𝐶𝐶𝐶𝐶𝐶𝐶 + 𝑉𝑉𝑡𝑡𝑡𝑡𝑡𝑡 = −5 𝑉𝑉 + 25 𝑉𝑉 = 20 𝑉𝑉 under no-load conditions and will shift towards 5 𝑉𝑉 5 𝑉𝑉 VEE* with increasing load. 𝐼𝐼𝑅𝑅3,𝑅𝑅4 = = = 0.17 𝑚𝑚𝑚𝑚 𝑅𝑅3 + 𝑅𝑅4 15 𝑘𝑘Ω + 15 𝑘𝑘Ω Resistors R1 and R5 are chosen according to the 𝑉𝑉𝑉𝑉𝑉𝑉𝑉𝑉𝑉𝑉 20 𝑉𝑉 data sheet and application notes of the operational 𝑅𝑅2 = = = 10 𝑘𝑘Ω 𝐼𝐼𝑅𝑅2 2 𝑚𝑚𝑚𝑚 amplifier IC1. 𝐼𝐼𝑆𝑆1 = 𝐼𝐼𝑅𝑅2 − 𝐼𝐼𝑅𝑅3,𝑅𝑅4 = 2 𝑚𝑚𝑚𝑚 − 0.17 𝑚𝑚𝑚𝑚 = 1.83 𝑚𝑚𝑚𝑚 Regulated Negative Rail The voltage VVISO has its maximum under no-load Referring to Figure 5, the negative rail voltage conditions and will shift towards VEE* with VCOM is calculated using the following formula and increasing load. based on the data sheet and application notes of the shunt regulator TL431BFDT (S1):
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Resistors R1 and R5 are chosen according to the
data sheet and application notes of the operational amplifier IC1.
Figure 6. Standard Setting for IGBT Short-Circuit
Detection. Figure 5. VEE-Regulator for SiC MOSFET Switches with Regulated Negative Rail. In this case, Rc will damp the oscillations and, in combination with Ca, improves the response time. The value of Rc shall be determined by tests as it depends on the actual application conditions. If Short-Circuit Monitoring required, typical values are in the range of several SiC MOSFETs have a considerable smaller short- 100 kΩ. circuit safe operating area (SCSOA) than Si-based Note: Depending on the actual application IGBTs. The typical short-circuit withstand time for conditions and values of R1 and Rvce1 through Rvcex, the short-circuit monitoring will become IGBTs is 10 µs. In comparison, SIC MOSFETs are dependent on the DC-link voltage. Therefore, tests often rated for 2 µs only. at DC-link voltage levels relevant to the application All SCALE gate driver cores are able to detect and must be conducted to verify that the short-circuit safely turn-off a short-circuit condition within this protection is provided. 2 µs time frame. To achieve this, only minor Capacitor Ca can be removed or set to values in adaptions to the standard setting for IGBTs are the range of 1 pF to 10 pF (specific value needs to required, as demonstrated in the following be determined by actual testing which also example using a 2SC0115T SCALE gate driver considers parasitic effects and tolerances). core. Figure 6 illustrates the typical settings for short-circuit monitoring circuitry as can be found in the corresponding manual (2) (only one channel shown). The response time is set by capacitor Ca and resistor Ra. Typical values for DC-link voltages greater than 550 V are, for instance, Ca = 22 pF and Ra = 120 kΩ, which provide a response time of 5.9 µs (2). For the operation of SiC MOSFETs, it is recommended that an additional diode D2 (BAS416, same as D1) is added as shown in Figure 7. This diode clamps potential oscillations during turn-on transients to VCOM and reduces the response time if such oscillations are present. In some cases it may also be necessary to add a Figure 7. Modified Setting for SiC MOSFET Short-Circuit resistor Rc. This resistor is only required if large Detection. oscillations are present during turn-on events.
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Reference Voltage References
SCALE gate drivers compare the actual voltage 1. Application Note AN-1101, “Application level at pin VCE with a reference voltage Vref (Vref is with SCALE-2 and SCALE-2+ Gate Driver typically referenced to VEE). In the case that the Cores”, Power Integrations voltage at pin VCE is higher than the reference 2. “SCALE-2+ 2SC0115T Description and voltage, the gate drivers recognize this as a short- Application Manual”, Power Integrations circuit event and shut down the related power switch. As the reference voltage is tied to the internal VEE-regulator voltage a conversion of the actual reference voltage Vref* is required: 𝑉𝑉𝑟𝑟𝑟𝑟𝑟𝑟∗ = 𝑉𝑉𝑟𝑟𝑟𝑟𝑟𝑟 + (𝑉𝑉𝑉𝑉𝑉𝑉𝑉𝑉 + 𝑉𝑉𝑉𝑉𝑉𝑉𝑉𝑉∗ ) with VVEE and VVEE* referenced to VCOM. Example acc. to Figure 8: The reference voltage Vref is set to 10.2 V with respect to VEx / VEE, and the new VEE* potential is set to 5 V with respect to VCOM (i.e. VCOM = -5 V). The actual reference voltage Vref* in this case is calculated as: 𝑉𝑉𝑟𝑟𝑟𝑟𝑟𝑟∗ = 𝑉𝑉𝑟𝑟𝑟𝑟𝑟𝑟 + (𝑉𝑉𝑉𝑉𝑉𝑉𝑉𝑉 + 𝑉𝑉𝑉𝑉𝑉𝑉𝑉𝑉∗ ) 𝑉𝑉𝑟𝑟𝑟𝑟𝑟𝑟∗ = 10.2 𝑉𝑉 + (0 𝑉𝑉 + 5 𝑉𝑉) = 15.2 𝑉𝑉 Therefore, in certain applications, it may be necessary to reduce the Vref* voltage by reducing the corresponding resistor at pin REFx (available with most of the SCALE gate driver cores, e.g. 2SC0435T in Figure 2). Alternatively, Vref may be directly referenced to VCOM instead of VEE.
Figure 8. Example of Reference Voltage Vref in Relations to
VVEE and VVEE*.
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Revision Notes Date
1.0 Released by Power Integrations 03/17
Corrected pin designations in middle IGBT Driver for Figure 2: Pin 26
1.1 06/17 from VCE to VE2 and Pin 15 from VCE to VE1.
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