This document provides specifications for an NPN epitaxial silicon transistor in an SOT-23 package for use in RF amplifiers. It lists the absolute maximum ratings including voltages, currents, and temperatures. It also lists the electrical characteristics including breakdown voltages, current and gain values, frequencies, and noise figure under specified test conditions. This transistor is suitable for use in RF amplifier applications up to 200MHz as it provides a power gain of 15dB at that frequency.
This document provides specifications for an NPN epitaxial silicon transistor in an SOT-23 package for use in RF amplifiers. It lists the absolute maximum ratings including voltages, currents, and temperatures. It also lists the electrical characteristics including breakdown voltages, current and gain values, frequencies, and noise figure under specified test conditions. This transistor is suitable for use in RF amplifier applications up to 200MHz as it provides a power gain of 15dB at that frequency.
This document provides specifications for an NPN epitaxial silicon transistor in an SOT-23 package for use in RF amplifiers. It lists the absolute maximum ratings including voltages, currents, and temperatures. It also lists the electrical characteristics including breakdown voltages, current and gain values, frequencies, and noise figure under specified test conditions. This transistor is suitable for use in RF amplifier applications up to 200MHz as it provides a power gain of 15dB at that frequency.
This document provides specifications for an NPN epitaxial silicon transistor in an SOT-23 package for use in RF amplifiers. It lists the absolute maximum ratings including voltages, currents, and temperatures. It also lists the electrical characteristics including breakdown voltages, current and gain values, frequencies, and noise figure under specified test conditions. This transistor is suitable for use in RF amplifier applications up to 200MHz as it provides a power gain of 15dB at that frequency.
Collector-Emitter Voltage VCEO 12 V Emitter-Base Voltage VEBO 2.5 V
Î) Collector Current IC 50 mA
Î Collector Dissipation (T A=25 mW Î PC 350 mW/ Î Derate above 25 2.8
Î Junction Temperature TJ 150 Storage Temperature T STG -55~150
1. Base 2. Emitter 3. Collector
ELECTRICAL CHARACTERISTICS (TA=25 Î)
Characteristic Symbol Test Conditions Min Max Unit
Collector-Base Breakdown Voltage BVCBO IC=0.01mA, IE=0 20 V
Collector-Emitter Breakdown Voltage BVCEO IC=3mA, IB=0 12 V
À Emitter Base Breakdown Voltage BVEBO IE=0.01mA, IC=0 2.5 V Collector Cut-off Current ICBO VCB=15V, IE=0 0.02 DC Current Gain hFE VCE=1V, IC=3mA 25 Collector-Emitter Saturation Voltage VCE (sat) IC=10mA, IB=1mA 0.4 V Base-Emitter Saturation Voltage VBE (sat) IC=10mA, IB=1mA 1 V Current Gain Bandwidth Product fT VCE=6V, IC=5mA 900 MHz Collector Base Capactiance CCB VCB=10V, IE=0, f=0.1MHz to 1MHz 1 pF Small Signal Current Gain hFE VCE=6V, IC=2mA, f=1KHz 25 Noise Figure NF
VCE=6V, IC=1.5mA, f=200MHz 4.5 dB RS=50 Common Emitter Amplifier Power Gain GPE VCE=6V, IC=5mA, f=200MHz 15 dB
