 VB125SP

HIGH VOLTAGE IGNITION COIL DRIVER

POWER IC
TARGET DATA
TYPE VCL ICL ICC
VB125SP 370 V 9A 200 mA

■ PRIMARY COIL VOLTAGE INTERNALLY SET

■ COIL CURRENT LIMIT INTERNALLY SET
■ LOGIC LEVEL COMPATIBLE INPUT
■ BATTERY OPERATION
■ SINGLE FLAG-ON COIL CURRENT
■ TEMPERATURE COMPENSATED HIGH
VOLTAGE CLAMP
DESCRIPTION 10

The VB125SP is a high voltage power integrated

circuit made using SGS-THOMSON
1
Microelectronics Vertical Intelligent Power
Technology, with vertical current flow power
darlington and logic level compatible driving
circuit. PowerSO-10
The VB125SP can be directly biased by using the
12V battery voltage, thus avoiding to use a low
voltage regulator. It has built-in protection circuits
for coil current limiting and collector voltage
clamping. It is suitable as smart, high voltage, high
current interface in advanced electronic ignition
system.

BLOCK DIAGRAM
VCC CS HVC
6 8 TAB

INPUT 9
DRIVER

FLAG

FLAG 10
VOLTAGE THERMAL
REFERENCE RSENSE
PROTECTION

7 *
GND (Control) GND (Power)
(*) Pins 1...5

September 1997 1/8

This is preliminary information on a new product in development or undergoing evaluation. Details are subject to change without notice.
1
VB125SP

ABSOLUTE MAXIMUM RATING

Symbol Parameter Value Unit
HV C Collector Voltage (Internally Limited) -0.3V to VCLAMP V
IC Collector Current (Internally Limited) 10 A
VCC Driving Stage Supply Voltage -0.2 to 40 V
ICC Driving Circuitry Supply Current 400 mA
IS Logic Circuitry Supply Ccurrent 100 mA
VIN Input Voltage -0.3 to 6 V
PTOT Power Dissipation TBD W
VESD ESD Voltage (HVC Pin) -4 to 4 KV
VESD ESD Voltage (Other Pin) -2 to 2 KV
Tj Operating Junction Temperature -40 to 150 °C
TSTG Storage Temperature Range -55 to 150 °C

THERMAL DATA
Rthj-case Thermal Resistance Junction - Case MAX 1.2 °C/W
Rthj-amb Thermal Resistance Junction - Ambient MAX 62.5 °C/W

CONNECTION DIAGRAM

HVC

VCC 6 GND
5
GND GND
Cs GND
INPUT GND
FLAG 10 1 GND

PIN FUNCTION
No Name FUNCTION
1-5 GND Emitter Power Ground
6 VCC Logic Supply Voltage
7 GND Control Ground (*)
8 CS Logic Level Supply Voltage Filter Capacitor
9 INPUT Logic Input Channel
10 FLAG Diagnostic Output Signal
TAB HVC Primary Coil Output Driver
(*) Pin 6 must be connected to pins 1-5 externally

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1
 VB125SP

ELECTRICAL CHARACTERISTICS (Vbat = 6 to 24V; -40°C<Tj <125°C; Rcoil = 400 to 700m Ω ; Lcoil = 2
to
6mH; unless otherwise specified; See Note 1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
VCL High Voltage Clamp IC = 6.5 A; (See Note 2) 340 370 400 V
Saturation Voltage of the Power
VCE(sat) IC = 5A; Vin = 4V (See Note 3) 2 V
Stage
Vin=0.4V Vbat= 14V(Notes 4-5) 20 mA
ICC(off) Power Off Supply Current
Vin=0.4V V bat = 24 V 80 mA
VIn = 4 V Vbat<14V (Note 4-5) 220 mA
ICC(on) Power On Supply Current
Vin = 4 V V bat = 24 V 300 mA
ICL Coil Current Limit Vin = 4 V (See Note 6-7) 8 10 A
VinH High Level Input Voltage 4 V
VinL Low Level Input Voltage 0.8 V
V IN(hyst.) Input Hysteresis Voltage 0.4 V
IinH High Level Input Current Vin = 4 V 10 150 µA
IinL Low Level Input Current Vin = 0.8 V -100 µA
High Level Diagnostic Output REXT = 22 K Ω CEXT = 1 nF
VdiagH 3.5 5.5 V
Voltage (See Note 8)
Low Level Diagnostic Output REXT = 22 K Ω C EXT = 1 nF
VdiagL 0.5 V
Voltage (See Note 8)
Current Threshold Level Diag-
IdiagTH Tj = 25 °C (See Note 7and fig. 5) 4.25 4.5 4.75 A
nostic
Idiag High Level Flag Output Current IC>IDiagTH (See Note 7) 0.5 mA
Idiag(leak) Leakage Current on Flag Output Vin = LOW 10 µA
VF Antipallel Diode Forward Voltage IC = -1 A 2 V
Es/b Single Pulse Avalanche Energy 300 mJ
Tj Thermal Output Current Control IN = ON (See Note 9) 150 °C
Turn-on Delay Time of Output
td(on) (See Note 10) TBD µs
Current
Turn-off Delay Time of Output
td(off) (See Note 11) TBD µs
Current
Turn-off Delay Time of Output
td(off) (See Note 11) TBD µs
Current

FIGURE 1: Temperature Compensated High FIGURE 2: Electrical Characteristic of the Circuit

Voltage Clamp Shown in Figure 1

HVC IC [mA]

nVZ
40

R i1 30
KV be
Rii 20
slope ∝ ∑Ri
10

Rsens
100 200 300 400 V [V]
CE
nVZ V CL
PWR GND

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VB125SP

NOTE 1 Parametric degradation are allowed with 6V < Vbat < 10V and Vbat > 24V.
NOTE 2 In the high voltage clamping structure of this device a temperature compensation has been implemented. The
circuit schematic is shown in fig. 1. The KVbe cell takes care of the temperature compensation. The whole
electrical characteristic of the new circuit is shown in fig. 2. Up to VCE=nV Z no current will flow into the collector (just the
leakage current of the power stage); for nV Z < VCE < VCL a current begins to flow across the resistances of the KVbe
compensation circuit (typical slope ≅ 20 K Ω ) as soon as the Vcl is reached the dinamic resistance drop to ~ 4 Ω to
protect the device against overvoltage (See Fig. 3).
NOTE 3 The saturation voltage of the Power stage includes the drop on the sensing resistor.
NOTE 4 Considering the different ways of operation of the device (with or without spark, etc...) there are some short
periods of time in which the output terminal (HVC) is pulled below ground by a negative current due to leakage
inductances and stray capacitances of the ignition coil.With VIPower devices, if no corrective action is taken, these
negative currents can cause parasitic glitches on the diagnostic output. To kill this potential problem, a circuit that avoids
the possibility for the HV C to be pulled undeground, by sending the required negative current from the battery is
implemented in the VB125SP.For this reason there are some short periods in which a current exceeding 220 mA flows
in the pin V D.
NOTE 5 A zener protection of 16V (typical) is placed on the supply pin (VCC) of the chip to protect the internal circuitry.
For this reason, when the battery voltage exceedes that value, the current flowing into Vcc pin can be greater than the
maximum current specified at Vbat=14V (both in power on and power off condictions) : it will be limited by an internal
resistor.
NOTE 6 The primary coil current value Icl must be measured 1 ms after desaturation of the power stage.
NOTE 7 These limits apply with regard to the minimum battery voltage and resistive drop on the coil and cables that permit
to reach the limitation or diagnostic level.
NOTE 8 No internal Pull-Down.
NOTE 9 Tjmin = 150 °C means that the behaviour of the device will not be affected for junction temperature lower than
150 °C. For higher temperature, the thermal protection circuit will begin its action reducing the Icl limit according with the
power dissipation. Chip temperature is a function of the Rth of the whole system in which the device will be operating
(See Fig.4).
NOTE 10 Propagation Time measured from input voltage rising edge to 50% of output voltage falling edge.
NOTE 11 As soon as the input signal is switched low the stored charges in the base of the power transistor are removed
and the so called «Turn-off Delay Time of Coil Current» begins; after at the «Turn-off Fall Time of Coil Current» starts
and, at the same time, the HVC rises.
tdLH is defined as the time between the negative edge of the input pulse to the point where the HVC reaches 100V.
tfLH is defined as the delay between the 90% and the 10% of the coil current.

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 VB125SP

FIGURE 3: Vcl with load L ≅ 4 mH

FIGURE 4: Output Current Waveform after Thermal Protection Activation.

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1
VB125SP

FIGURE 5: Waveforms FIGURE 6: Flag Current Versus Temperature

Iflag (A)

INPUT
6.5A
5.0

4.5A
IC 4.5

4.0
HVC
3.5
-50 0 50 100 Tcase (oC)
FLAG

FIGURE 7: Application Circuit

VBAT

V CC HVC

INPUT

µP FLAG VB125SP 100nF

CS
1nF 22K

CEXT R EXT GND PWR

GND

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1
 VB125SP

PowerSO-10 MECHANICAL DATA

mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 3.35 3.65 0.132 0.144
A1 0.00 0.10 0.000 0.004
B 0.40 0.60 0.016 0.024
c 0.35 0.55 0.013 0.022
D 9.40 9.60 0.370 0.378
D1 7.40 7.60 0.291 0.300
E 9.30 9.50 0.366 0.374
E1 7.20 7.40 0.283 0.291
E2 7.20 7.60 0.283 0.300
E3 6.10 6.35 0.240 0.250
E4 5.90 6.10 0.232 0.240
e 1.27 0.050
F 1.25 1.35 0.049 0.053
H 13.80 14.40 0.543 0.567
h 0.50 0.002
L 1.20 1.80 0.047 0.071
q 1.70 0.067

0.10 A B
10 6
=

=
=

H E
=

E2 E3 E1 E4
=
=

=
=
=

1 5
SEATING
PLANE

e B DETAIL ”A” A
0.25 M C
Q
D
h = D1 =
= =
SEATING
PLANE
A
F
A1 A1

L
DETAIL”A”

α
0068039-C

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VB125SP

Information furnished is believed to be accurate and reliable. However, SGS-THO MSON Microelectronics assumes no responsability for
the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its
use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of SGS-THOMSON Microelectronics.

 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved.

SGS-THO MSON Microelectronics GROUP OF COMPANIES

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