(7 0 Ω ) E

Darlington 2SB1686 B

Equivalent circuit C

Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2642) Application : Audio, Series Regulator and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM20(TO220F)
Symbol Ratings Unit Symbol Conditions Ratings Unit
4.2±0.2
µA
10.1±0.2

4.0±0.2
VCBO –110 V ICBO VCB=–110V –100max 2.8 c0.5

VCEO –110 V IEBO VEB=–5V –100max µA

8.4±0.2
VEBO –5 V V(BR)CEO IC=–30mA –110min V

16.9±0.3
IC –6 A hFE VCE=–4V, IC=–5A 5000min∗ a
ø3.3±0.2

0.8±0.2
IB –1 VCE(sat) IC=–5A, IB=–5mA –2.5max b
A V
PC 30(Tc=25°C) W VBE(sat) IC=–5A, IB=–5mA –3.0max V

±0.2
3.9
Tj 150 °C fT VCE=–12V, IE=0.5A 100typ MHz

13.0min
1.35±0.15
Tstg –55 to +150 °C COB VCB=–10V, f=1MHz 110typ pF 1.35±0.15

∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) 0.85 +0.2
www.DataSheet4U.com 2.54 2.54
-0.1
0.45 +0.2
-0.1 2.4±0.2
■Typical Switching Characteristics (Common Emitter) 2.2±0.2

VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.0g
(V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) a. Part No.
B C E
–30 6 –5 –10 5 –5 5 1.1typ 3.2typ 1.1typ b. Lot No.

I C – V CE Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)

A

A
m

5m (V C E =–4V)
–1

.
Collector-Emitter Saturation Voltage V C E (s at) (V )

–6 –0 –3 –6
mA
A

.4
–0 .3 m A
–5m

–0

Collector Current I C (A)

–0. 2m A
Collector Current I C (A)

–4 –2 –4

–5A

p)
Tem

)
emp
mp)
I B =–0. 1mA

se
I C =–3A

se T
e Te
(Ca

(Ca
(Cas
–2 –1 –2

˚C
125

25˚C
–30˚C
0 0 0
0 –2 –4 –6 –0.1 –0.5 –1 –5 –10 –50 –100 0 –1 –2 –3
Collector-Emitter Voltage V C E (V) Base Current I B (mA) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics

θ j- a ( ˚ C/W)

(V C E =–4V) (V C E =–4V)
50000 50000 5.0

125˚C
D C Cur r ent Gai n h F E

D C Cur r ent Gai n h F E

Transient Thermal Resistance

Typ 25˚C
10000 10000
–30˚C
5000 5000

1.0
1000 1000
500 500
0.5

100 100 0.3

–0.01 –0.05 –0.1 –0.5 –1 –5 –6 –0.01 –0.05 –0.1 –0.5 –1 –5 –6 1 10 100 1000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating

(V C E =–12V)
120 –20 30

–10
M aximu m Power Dissip ation P C (W)

100 Typ 10
m
–5 10 s
Cut-o ff Fr equ ency f T (MH Z )

0m
ith
Co lle ctor Cu rren t I C (A)

s
80 D 20
In

C
fin
ite
he

60
at

–1
si
nk

–0.5
40 10

Without Heatsink
Natural Cooling
20
–0.1 Without Heatsink
2
0 –0.05 0
0.02 0.05 0.1 0.5 1 5 6 –3 –5 –10 –50 –100 –200 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

57