2SB1587 PDF
2SB1587 PDF
2SB1587 PDF
Darlington 2SB1587 B
Equivalent circuit C
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2438) Application : Audio, Series Regulator and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM100(TO3PF)
Symbol 2SB1587 Unit Symbol Conditions 2SB1587 Unit
0.8±0.2
15.6±0.2 5.5±0.2
VCBO –160 V ICBO VCB=–160V –100max µA 3.45 ±0.2
5.5
9.5±0.2
VEBO –5 V V(BR)CEO IC=–30mA –150min V
23.0±0.3
IC –8 A hFE VCE=–4V, IC=–6A 5000min∗ ø3.3±0.2
a
IB –1 A VCE(sat) IC=–6A, IB=–6mA –2.5max V
1.6
b
3.0
PC 75(Tc=25°C) W VBE(sat) IC=–6A, IB=–6mA –3.0max V
3.3
Tj 150 °C fT VCE=–12V, IE=1A 65typ MHz 1.75 0.8
16.2
Tstg –55 to +150 °C COB VCB=–10V, f=1MHz 160typ pF 2.15
1.05 +0.2
∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
-0.1
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.5g
(V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) a. Type No.
B C E
–60 10 –6 –10 5 –6 6 0.7typ 3.6typ 0.9typ b. Lot No.
(V C E =–4V)
Collector-Emitter Saturation Voltage V C E (s a t) (V )
.5
mA
–8 –3 –8
–2
A A
–2.0
m – 1 .8 m
–10
– 1 .5 m A
–1. 3m A
–0.8m A –2 –8A
–0.5m A –6A
–4 –4
p)
mp)
I C =–4A
Tem
)
emp
e Te
I B =–0.3mA –1
se
se T
(Ca
Cas
–2 –2
(Ca
˚C
˚C (
125
25˚C
–30
0 0 0
0 –2 –4 –6 –0.2 –0.5 –1 –5 –10 –50 –100 –200 0 –1 –2 –3
Collector-Emitter Voltage V C E (V) Base Current I B (mA) Base-Emittor Voltage V B E (V)
(V C E =–4V) (V C E =–4V)
40,000 50000 4
125˚C
DC Cur rent Gain h FE
Typ
D C Cur r ent Gai n h F E
25˚C
10000
10,000 –30˚C 1
5000
5,000 0.5
–10 10
10
Maximu m Power Dissi pation P C (W)
m
80 0m s
Cut- off F req uency f T (M H Z )
–5 D s 60
C
W
Typ
ith
Collect or Cur ren t I C (A)
In
fin
60
ite
he
–1 40
at
si
nk
40 –0.5
Without Heatsink 20
20 Natural Cooling
–0.1
Without Heatsink
3.5
0 –0.05 0
0.02 0.05 0.1 0.5 1 5 8 –2 –5 –10 –50 –100 –200 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
49