HGTG7N60A4D, HGTP7N60A4D,

HGT1S7N60A4DS
Data Sheet January 2005

600V, SMPS Series N-Channel IGBT with Features

Anti-Parallel Hyperfast Diode • >100kHz Operation At 390V, 7A
The HGTG7N60A4D, HGTP7N60A4D and
• 200kHz Operation At 390V, 5A
HGT1S7N60A4DS are MOS gated high voltage switching
devices combining the best features of MOSFETs and • 600V Switching SOA Capability
bipolar transistors. These devices have the high input • Typical Fall Time. . . . . . . . . . . . . . . . . 75ns at TJ = 125oC
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage • Low Conduction Loss
drop varies only moderately between 25oC and 150oC. The • Temperature Compensating SABER™ Model
IGBT used is the development type TA49331. The diode www.fairchildsemi.com
used in anti-parallel is the development type TA49370.
Packaging
This IGBT is ideal for many high voltage switching
JEDEC STYLE TO-247
applications operating at high frequencies where low
conduction losses are essential. This device has been E
C
optimized for high frequency switch mode power G
supplies.

Formerly Developmental Type TA49333.

Ordering Information COLLECTOR

(FLANGE)
PART NUMBER PACKAGE BRAND

HGTG7N60A4D TO-247 G7N60A4D

HGTP7N60A4D TO-220AB G7N60A4D

JEDEC TO-220AB
HGT1S7N60A4DS TO-263AB G7N60A4D
E
NOTE: When ordering, use the entire part number. Add the suffix 9A C
G
to obtain the TO-263AB variant in tape and reel, e.g.,
HGT1S7N60A4DS9A.

Symbol
COLLECTOR
C
(FLANGE)

G JEDEC TO-263AB

E COLLECTOR
G (FLANGE)

FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027

©2005 Fairchild Semiconductor Corporation HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS Rev. B1

 HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified

ALL TYPES UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES 600 V
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 34 A
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 14 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM 56 A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES ±20 V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM ±30 V
Switching Safe Operating Area at TJ = 150oC, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . SSOA 35A at 600V
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 125 W
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0 W/oC
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 oC

Maximum Lead Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 300 oC
Package Body for 10s, See Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TPKG 260 oC

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE:
1. Pulse width limited by maximum junction temperature.

Electrical Specifications TJ = 25oC, Unless Otherwise Specified

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Collector to Emitter Breakdown Voltage BVCES IC = 250µA, VGE = 0V 600 - - V
Collector to Emitter Leakage Current ICES VCE = 600V TJ = 25oC - - 250 µA
TJ = 125oC - - 2 mA
Collector to Emitter Saturation Voltage VCE(SAT) IC = 7A, TJ = 25oC - 1.9 2.7 V
VGE = 15V
TJ = 125oC - 1.6 2.2 V
Gate to Emitter Threshold Voltage VGE(TH) IC = 250µA, VCE = 600V 4.5 5.9 7 V
Gate to Emitter Leakage Current IGES VGE = ±20V - - ±250 nA
Switching SOA SSOA TJ = 150oC, RG = 25Ω, VGE = 15V, 35 - - A
L = 100µH, VCE = 600V
Gate to Emitter Plateau Voltage VGEP IC = 7A, VCE = 300V - 9 - V
On-State Gate Charge Qg(ON) IC = 7A, VGE = 15V - 37 45 nC
VCE = 300V
VGE = 20V - 48 60 nC
Current Turn-On Delay Time td(ON)I IGBT and Diode at TJ = 25oC, - 11 - ns
ICE = 7A,
Current Rise Time trI - 11 - ns
VCE = 390V,
Current Turn-Off Delay Time td(OFF)I VGE = 15V, - 100 - ns
RG = 25Ω,
Current Fall Time tfI - 45 - ns
L = 1mH,
Turn-On Energy EON1 Test Circuit (Figure 24) - 55 - µJ
Turn-On Energy EON2 - 120 150 µJ
Turn-Off Energy (Note 2) EOFF - 60 75 µJ
Current Turn-On Delay Time td(ON)I IGBT and Diode at TJ = 125oC, - 10 - ns
ICE = 7A,
Current Rise Time trI - 7 - ns
VCE = 390V, VGE = 15V,
Current Turn-Off Delay Time td(OFF)I RG = 25Ω, - 130 150 ns
L = 1mH,
Current Fall Time tfI - 75 85 ns
Test Circuit (Figure 24)
Turn-On Energy (Note 2) EON1 - 50 - µJ
Turn-On Energy (Note 2) EON2 - 200 215 µJ
Turn-Off Energy (Note 3) EOFF - 125 170 µJ

©2005 Fairchild Semiconductor Corporation HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS Rev. B1

 HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS

Electrical Specifications TJ = 25oC, Unless Otherwise Specified (Continued)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Diode Forward Voltage VEC IEC = 7A - 2.4 - V
Diode Reverse Recovery Time trr IEC = 7A, dIEC/dt = 200A/µs - 34 - ns
IEC = 1A, dIEC/dt = 200A/µs - 22 - ns
Thermal Resistance Junction To Case RθJC IGBT - - 1.0 oC/W

Diode - - 2.2 oC/W

NOTES:
2. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in
Figure 24.
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.

Typical Performance Curves Unless Otherwise Specified

ICE, COLLECTOR TO EMITTER CURRENT (A)

35 40
VGE = 15V TJ = 150oC, RG = 25Ω, VGE = 15V, L = 100µH
ICE , DC COLLECTOR CURRENT (A)

30
30
25

20
20
15

10
10
5

0 0
25 50 75 100 125 150 0 100 200 300 400 500 600 700
TC , CASE TEMPERATURE (oC) VCE, COLLECTOR TO EMITTER VOLTAGE (V)

FIGURE 1. DC COLLECTOR CURRENT vs CASE FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
TEMPERATURE
tSC , SHORT CIRCUIT WITHSTAND TIME (µs)

500 16 140

ISC, PEAK SHORT CIRCUIT CURRENT (A)

TC VGE VCE = 390V, RG = 25Ω, TJ = 125oC
fMAX, OPERATING FREQUENCY (kHz)

75oC 15V 14 120

12 ISC 100
200

10 80
100 fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
fMAX2 = (PD - PC) / (EON2 + EOFF) 8 60
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
6 tSC 40
RØJC = 1.0oC/W, SEE NOTES
TJ = 125oC, RG = 25Ω, L = 1mH, V CE = 390V
30 4 20
1 5 10 20 10 11 12 13 14 15
ICE, COLLECTOR TO EMITTER CURRENT (A) VGE , GATE TO EMITTER VOLTAGE (V)

FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO FIGURE 4. SHORT CIRCUIT WITHSTAND TIME

EMITTER CURRENT

©2005 Fairchild Semiconductor Corporation HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS Rev. B1

 HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS

Typical Performance Curves Unless Otherwise Specified (Continued)

ICE, COLLECTOR TO EMITTER CURRENT (A)

ICE, COLLECTOR TO EMITTER CURRENT (A)

30 30
DUTY CYCLE < 0.5%, VGE = 12V DUTY CYCLE < 0.5%, VGE = 15V
PULSE DURATION = 250µs PULSE DURATION = 250µs
25 25
TJ = 125oC
20 20

15 15

10 10
TJ = 125oC
TJ = 25oC
5 5
TJ = 150oC TJ = 150oC TJ = 25oC
0
0
0 0.5 1.0 1.5 2.0 2.5 3.0 0 0.5 1.0 1.5 2.0 2.5 3.0
VCE, COLLECTOR TO EMITTER VOLTAGE (V) VCE, COLLECTOR TO EMITTER VOLTAGE (V)

FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE

500 350
RG = 25Ω, L = 1mH, VCE = 390V RG = 25Ω, L = 1mH, VCE = 390V

EOFF, TURN-OFF ENERGY LOSS (µJ)

EON2 , TURN-ON ENERGY LOSS (µJ)

300
400
250
TJ = 125oC, VGE = 12V, VGE = 15V
300
200
TJ = 125oC, VGE = 12V OR 15V
150
200

100
100
50
TJ = 25oC, VGE = 12V, VGE = 15V
TJ = 25oC, VGE = 12V OR 15V
0 0
0 2 4 6 8 10 12 14 0 2 4 6 8 10 12 14
ICE , COLLECTOR TO EMITTER CURRENT (A) ICE , COLLECTOR TO EMITTER CURRENT (A)

FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT EMITTER CURRENT

16 40
RG = 25Ω, L = 1mH, VCE = 390V RG = 25Ω, L = 1mH, VCE = 390V
td(ON)I, TURN-ON DELAY TIME (ns)

TJ = 25oC, VGE = 12V

14 TJ = 25oC, VGE = 12V, VGE = 15V
30
TJ = 125oC, VGE = 12V
trI , RISE TIME (ns)

12 TJ = 25oC, VGE = 15V 20

10 10
TJ = 125oC, VGE = 15V

TJ = 125oC, VGE = 12V, VGE = 15V

8 0
0 2 4 6 8 10 12 14 0 2 4 6 8 10 12 14
ICE , COLLECTOR TO EMITTER CURRENT (A) ICE , COLLECTOR TO EMITTER CURRENT (A)

FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT EMITTER CURRENT

©2005 Fairchild Semiconductor Corporation HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS Rev. B1

 HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS

Typical Performance Curves Unless Otherwise Specified (Continued)

180 90
RG = 25Ω, L = 1mH, VCE = 390V RG = 25Ω, L = 1mH, VCE = 390V
td(OFF)I , TURN-OFF DELAY TIME (ns)

80
160

70

tfI , FALL TIME (ns)

140 VGE = 15V, TJ = 125oC TJ = 125oC, VGE = 12V OR 15V
60
120
VGE = 12V, TJ = 125oC 50

100
VGE = 15V, TJ = 25oC 40 TJ = 25oC, VGE = 12V OR 15V

80 30
VGE = 12V, TJ = 25oC
60 20
0 2 4 6 8 10 12 14 0 2 4 6 8 10 12 14
ICE , COLLECTOR TO EMITTER CURRENT (A) ICE , COLLECTOR TO EMITTER CURRENT (A)

FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
EMITTER CURRENT CURRENT
ICE, COLLECTOR TO EMITTER CURRENT (A)

120 15
DUTY CYCLE < 0.5%, VCE = 10V IG(REF) = 1mA, RL = 43Ω, TJ = 25oC
VGE, GATE TO EMITTER VOLTAGE (V)
PULSE DURATION = 250µs
100
12 VCE = 600V
TJ = 25oC VCE = 400V
80
9
TJ = 125oC TJ = -55oC
60
VCE = 200V
6
40

20 3

0 0
7 8 9 10 11 12 13 14 15 0 5 10 15 20 25 30 35 40
VGE, GATE TO EMITTER VOLTAGE (V) QG , GATE CHARGE (nC)

FIGURE 13. TRANSFER CHARACTERISTIC FIGURE 14. GATE CHARGE WAVEFORMS

ETOTAL, TOTAL SWITCHING ENERGY LOSS (µJ)

ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ)

800 10
RG = 25Ω, L = 1mH, VCE = 390V, VGE = 15V TJ = 125oC, L = 1mH, VCE = 390V, VGE = 15V
ETOTAL = EON2 + EOFF ETOTAL = EON2 + EOFF

600
ICE = 14A

400 ICE = 14A

1
ICE = 7A
ICE = 7A
200
ICE = 3.5A
ICE = 3.5A

0
25 50 75 100 125 150 0.1
10 100 1000
TC , CASE TEMPERATURE (oC) RG, GATE RESISTANCE (Ω)

FIGURE 15. TOTAL SWITCHING LOSS vs CASE FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE
TEMPERATURE

©2005 Fairchild Semiconductor Corporation HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS Rev. B1

 HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS

Typical Performance Curves Unless Otherwise Specified (Continued)

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

1.4 2.8
FREQUENCY = 1MHz DUTY CYCLE < 0.5%, TJ = 25oC
PULSE DURATION = 250µs
1.2
2.6
C, CAPACITANCE (nF)

1.0

2.4
0.8 CIES
ICE = 14A
0.6 2.2

0.4
ICE = 7A
2.0
COES
0.2
ICE = 3.5A
CRES
0 1.8
0 20 40 60 80 100 9 10 11 12 13 14 15 16
VCE, COLLECTOR TO EMITTER VOLTAGE (V) VGE, GATE TO EMITTER VOLTAGE (V)

FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER FIGURE 18. COLLECTOR TO EMITTER ON-STATE VOLTAGE
VOLTAGE vs GATE TO EMITTER VOLTAGE

35 100
DUTY CYCLE < 0.5%, dIEC/dt = 200A/µs 125oC trr
PULSE DURATION = 250µs
30
IEC , FORWARD CURRENT (A)

80
trr , RECOVERY TIMES (ns)

25

60
20 125oC tb
125oC 25oC
15 125oC ta
40
25oC trr
10
20 25oC ta
5
25oC tb
0 0
0 1 2 3 4 5 0 2 4 6 8 10 12 14
VEC , FORWARD VOLTAGE (V) IEC , FORWARD CURRENT (A)

FIGURE 19. DIODE FORWARD CURRENT vs FORWARD FIGURE 20. RECOVERY TIMES vs FORWARD CURRENT
VOLTAGE DROP

60 500
Qrr, REVERSE RECOVERY CHARGE (nc)

IEC = 7A, VCE = 390V VCE = 390V

400 125oC, IEC = 7A

50
trr, RECOVERY TIMES (ns)

125oC tb

40 300
125oC, IEC = 3.5A

30 125oC ta 200
25oC, IEC = 7A
25oC ta
20 100
25oC, IEC = 3.5A
25oC tb

10 0
100 200 300 400 500 600 700 100 200 300 400 500 600 700
diEC/dt, RATE OF CHANGE OF CURRENT (A/µs) diEC/dt, RATE OF CHANGE OF CURRENT (A/µs)

FIGURE 21. RECOVERY TIMES vs RATE OF CHANGE OF FIGURE 22. STORED CHARGE vs RATE OF CHANGE OF
CURRENT CURRENT

©2005 Fairchild Semiconductor Corporation HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS Rev. B1

 HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS

Typical Performance Curves

ZθJC , NORMALIZED THERMAL RESPONSE
Unless Otherwise Specified (Continued)

100
0.5

0.2

0.1 t1
10-1
0.05 PD

0.02 t2
0.01 DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
SINGLE PULSE
10-2 -5
10 10-4 10-3 10-2 10-1 100 101
t1 , RECTANGULAR PULSE DURATION (s)

FIGURE 23. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE

Test Circuit and Waveforms

HGTG7N60A4D

90%

VGE 10%
EON2
L = 1mH EOFF
VCE
RG = 25Ω
90%
DUT

+ ICE 10%
VDD = 390V td(OFF)I trI
- tfI
td(ON)I

FIGURE 24. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 25. SWITCHING TEST WAVEFORMS

©2005 Fairchild Semiconductor Corporation HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS Rev. B1

 HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS

Handling Precautions for IGBTs Operating Frequency Information

Insulated Gate Bipolar Transistors are susceptible to gate- Operating frequency information for a typical device
insulation damage by the electrostatic discharge of energy (Figure 3) is presented as a guide for estimating device
through the devices. When handling these devices, care performance for a specific application. Other typical
should be exercised to assure that the static charge built in frequency vs collector current (ICE) plots are possible using
the handler’s body capacitance is not discharged through the the information shown for a typical unit in Figures 6, 7, 8, 9
device. With proper handling and application procedures, and 11. The operating frequency plot (Figure 3) of a typical
however, IGBTs are currently being extensively used in device shows fMAX1 or fMAX2; whichever is smaller at each
production by numerous equipment manufacturers in point. The information is based on measurements of a
military, industrial and consumer applications, with virtually typical device and is bounded by the maximum rated
no damage problems due to electrostatic discharge. IGBTs junction temperature.
can be handled safely if the following basic precautions are
fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I).
taken:
Deadtime (the denominator) has been arbitrarily held to 10%
1. Prior to assembly into a circuit, all leads should be kept of the on-state time for a 50% duty factor. Other definitions
shorted together either by the use of metal shorting are possible. td(OFF)I and td(ON)I are defined in Figure 25.
springs or by the insertion into conductive material such Device turn-off delay can establish an additional frequency
as “ECCOSORBD™ LD26” or equivalent. limiting condition for an application other than TJM . td(OFF)I
2. When devices are removed by hand from their carriers, is important when controlling output ripple under a lightly
the hand being used should be grounded by any suitable loaded condition.
means - for example, with a metallic wristband.
fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2). The
3. Tips of soldering irons should be grounded.
allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC.
4. Devices should never be inserted into or removed from
The sum of device switching and conduction losses must
circuits with power on.
not exceed PD. A 50% duty factor was used (Figure 3) and
5. Gate Voltage Rating - Never exceed the gate-voltage the conduction losses (PC) are approximated by
rating of VGEM. Exceeding the rated VGE can result in
PC = (VCE x ICE)/2.
permanent damage to the oxide layer in the gate region.
6. Gate Termination - The gates of these devices are EON2 and EOFF are defined in the switching waveforms
essentially capacitors. Circuits that leave the gate open- shown in Figure 25. EON2 is the integral of the
circuited or floating should be avoided. These conditions instantaneous power loss (ICE x VCE) during turn-on and
can result in turn-on of the device due to voltage buildup EOFF is the integral of the instantaneous power loss
on the input capacitor due to leakage currents or pickup. (ICE x VCE) during turn-off. All tail losses are included in the
7. Gate Protection - These devices do not have an internal calculation for EOFF; i.e., the collector current equals zero
monolithic Zener diode from gate to emitter. If gate (ICE = 0).
protection is required an external Zener is recommended.

©2005 Fairchild Semiconductor Corporation HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS Rev. B1

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PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or This datasheet contains the design specifications for
In Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. I15