Silicon Carbide: A Brief Overview
March 14, 2019
ROHM Semiconductor, USA
Applications Engineering
© 2019 ROHM Co.,Ltd.
SiC: A Brief Overview (this is what we will cover)
• Where we are
• SiC Schottky Barrier Diodes
• SiC MOSFETs (Discrete)
• SiC Power Modules
• Where we are Headed
• Packages with Kelvin connection
• 4th Generation SiC MOSFETs
• Tips for Successful Use
• Gate Driver Criteria
• Consider the Isolated DC/DC Converter
• Check the Gate Drive signal
• Check the overshoot voltage on the Drain
• Look for current shoot-through
© 2019 ROHM Co., Ltd. P. 1
SiC: A Brief Overview
• SiC Diodes
• The #1 choice as the “catch” diode for PFC Boost applications
• Your choice of 80 diodes from 2A – 40A, from 650V – 1200V (20 are AECQ qualified)
• Choice of 2nd Gen or 3rd Gen devices (as of now only 2nd Gen are AECQ qualified)
• 3rd Gen offers the following improvements:
• Improved Surge current rating (IFSM)
• Lower Forward Voltage Drop (VF)
• Lower leakage current (IR)
Figure 1. 3.3 kW Battery Charger
© 2018 ROHM Co.,Ltd. P. 2
Reverse recovery characteristics
Si-FRD 3G SiC-SBD
VR=400V VR=400V
Minority carrier device Majority carrier device
→much depends on temperature →no reverse recovery current
※These data are provided to show a result of evaluation done by ROHM for your reference. ROHM does not
guarantee any of the characteristics shown here.
© 2018 ROHM Co.,Ltd. P. 3
2nd generation SiC-Schottky Barrier Diodes (SBD)
Package TO-220 TO-220FM TO-247 D2pack Bare dies
(LPTL)
K
K A K A
Rated N/C A
voltage A K A
650V 6A~20A 6A~20A 20A~40A 2A~20A 6A~20A(MP)
30A~100A(DS)
1200V 5A~20A 10A~40A 5A~20A
30A, 50A
1700V 10A~50A
Automotive grade AEC-Q101 qualified
650V 6A~20A 20A~40A 6A~20A
1200V 5A~20A 10A~40A
© 2018 ROHM Co.,Ltd. P. 4
3rd Gen SiC-SBD portfolio
Line up
650V P/N 2A 4A 6A 8A 10A 12A 15A 20A
SCS3xxAH
TO-220ACP-2L
(halogen free)
TO-220FM-2L SCS3xxAM
New
TO-263AB-3L
SCS3xxAJ
(D2PAK/LPTL) New
Mass Production
Note: Automotive (AECQ) Grade is in process. New Device
© 2018 ROHM Co.,Ltd. As of Oct, 2018 P. 5
SiC Discrete MOSFETs
• 2nd Generation devices utilizing Planar technology
• Largest die size for a given ON resistance (RDS(on))
• Longest Short-Circuit Withstand time (SCWT is about 10 microseconds)
• 3rd Generation devices utilizing Trench technology
• About half the ON resistance (RDS(on)) for a given die size
• Short-Circuit Withstand time is lower (SCWT is about 5 microseconds)
• Reduced Input capacitance (Ciss) makes it easier to drive
• Less switching energy losses for both Turn-On and Turn-Off
© 2018 ROHM Co.,Ltd. P. 6
2nd Generation DMOS Portfolio
650V P/N 120mΩ
TO-220AB SCT2120AF
GDS
1200V P/N 80mΩ 160mΩ 280mΩ 450mΩ
SCT2xxxKE
TO-247
SCH2080KE
SBD co-pack
G D S
1700V P/N 750mΩ 1150mΩ
TO-3PFM SCT2H12NZ
D
TO-268-2L SCT2xxxNY G D S
Mass Production G S
© 2018 ROHM Co.,Ltd. P. 7
3G SiC MOSFET Discrete development plan
650V Part No. / Status 17mΩ 22mΩ 30mΩ 60mΩ 80mΩ 120mΩ
TO-247N SCT3xxxAL
on MP
TO-247-4L SCT3xxxAR
MP: Q2/19
TO-263-7L SCT3xxxAW
MP: Q2/19
1200V Part No. / Status 22mΩ 30mΩ 40mΩ 80mΩ 105mΩ 160mΩ
TO-247N SCT3xxxKL
on MP
TO-247-4L SCT3xxxKR
MP: Q2/19
TO-263-7L SCT3xxxKW
MP: Q2/19
* as of Oct 2018
MP: Mass production
Mass Production Under development
© 2018 ROHM Co.,Ltd. P. 8
3G SiC MOSFET Discrete development plan
Automotive grade (AEC-Q101 qualified)
650V Part No. / Status 17mΩ 22mΩ 30mΩ 60mΩ 80mΩ 120mΩ
TO-247N SCT3xxxALHR
New
TO-263-7L SCT3xxxAWHR
MP: Q2/19
1200V Part No. / Status 22mΩ 30mΩ 40mΩ 80mΩ 105mΩ 160mΩ
TO-247N SCT3xxxKLHR
New
TO-263-7L SCT3xxxKWHR
MP: Q2/19
* as of Dec 2018
MP: Mass production Mass Production Under development
© 2018 ROHM Co.,Ltd. P. 9
Full SiC module outline
C type E type G type
1200V 1200, 1700V 1200V
80, 120, 180A 180, 250, 300A 400, 600A
Higher voltage High current
Low inductance
17mm
17mm
17mm
© 2019 ROHM Co.,Ltd. P. 10
Low Inductance
Package evolution of full SiC power modules
LS=25nH LS=13nH LS=10nH
~120A ~300A ~600A > Low stray inductance
LS=10nH
> High current rating
~600A
C type E type G type > Compatible outline with
45.6mm x 122mm 58mm x 152mm 58mm x 152mm
x 17mm x 17mm x 17mm market available IGBT
Under development
modules
Line up
Voltage Current
Case MOS device Ls
Rating Rating Circuit Thermistor
Type generation (nH)
(V) (A)
BSM400D12P2G003 1200 400 G 2G(planer) Half bridge 10 ○
BSM400D12P3G002 1200 400 G 3G(Trench) Half bridge 10 ○
BSM600D12P3G001 1200 600 G 3G(Trench) Half bridge 10 ○
BSM400C12P3G202 1200 400 G 3G(Trench) Chopper 10 ○
BSM600C12P3G201 1200 600 G 3G(Trench) Chopper 10 ○
© 2019 ROHM Co.,Ltd. P. 11
Low Inductance
Patented
Feature 1件
> Lower stray inductance by original main terminal structure 特許
出願済
E type G type Effort
Main > Reduction of stray inductance
E type:13nH → G type:10nH
terminal > Reduction of surge voltage by 27%
on same switching loss condition
VDS=600V
ID=300A
Ta=25degC
E type
E type
Surge voltage G type
Voltage
Current
© 2019 ROHM Co.,Ltd. P. 12
Full SiC power modules lineup
Module type Vdss Io (Tc=60℃ ) Part No. MOS Topology Status
C type 80A BSM080D12P2C008 Half bridge on MP
BSM120D12P2C005 2G Planar Half bridge on MP
120A
1200V BSM120C12P2C201 Chopper (boost) on MP
BSM180D12P3C007 Half bridge on MP
122 x 45.6 mm 180A 3G Trench
BSM180C12P3C202 Chopper (boost) on MP
E type BSM180D12P2E002 Half bridge on MP
180A
BSM180C12P2E202 2G Planar Chopper (boost) on MP
BSM300D12P2E001 Half bridge on MP
1200V
BSM300D12P3E005 * Half bridge 2019
300A
BSM300C12P3E201 3G Trench Chopper (boost) on MP
152 x 62 mm BSM300C12P3E301 * Chopper (buck) 2019
1700V 250A BSM250D17P2E004 2G Planar Half bridge on MP NEW
G type BSM400D12P2G003 2G Planar Half bridge on MP
400A BSM400D12P3G002 Half bridge on MP
1200V BSM400C12P3G202 Chopper (boost) on MP
3G Trench
152 x 62 mm BSM600D12P3G001 Half bridge on MP
600A
Low Ls 10nH BSM600C12P3G201 Chopper (boost) on MP
* Under Development
© 2019 ROHM Co.,Ltd. P. 13
Where we are headed - Package roadmap
◆TO-220AC ◆TO-247 2L
THD Halogen free (650V) (1700V)
◆TO-247 (650/1200V)
◆TO-220FM
SiC SBD
◆TO-220AC (650/1200V) 3G SBD (650V)
◆TO-220FM (650V)
SMD
◆TO-263-3L ◆TO-263-3L ◆TO-252 ◆TO-263-2L
(2G SBD) (3G SBD) (1200V)
THD Kelvin source
SiC MOSFET
◆TO-247 (650/1200V) ◆TO-247N ◆TO-247-4L (650/1200V) ◆TO-247-4L (1700V)
◆TO-3PFM (1700V) (Automotive)
SMD
Kelvin source
・ Leadless PKG ?
・ Embedded ?
◆TO-268-2L (1700V) ◆TO-263-7L ◆TO-263-7L (650/1200V)
(650/1200V) (Automotive) Low Ls technology
～2017 2018 2019 2020～
The trend is subject to change without notice.
© 2018 ROHM Co.,Ltd.
As of Feb. 2018 P. 14
PKG images are for illustrative purpose only.
Where we are headed – Gen 4 SiC MOSFET
1200V target spec (compared with Gen 3)
1) Ron*A : reduced by 50%
2) SCWT : > 5 µsec
3) Vgs rating : -10 to 20V (Vgs op is 15V)
4) Int R g : <50%
5) C gd : reduced Gen 2 Gen 3 Gen4
2012~ 2016~ 2019~
6) C gd /C gs : reduced
Structure Planar Trench Trench
Vdsmax 1200V
Target design sample : 2019 Q3 (Chip RonA 8.2mΩcm2 4.1mΩcm2 2.3mΩcm2
sample) SCWT 11usec 5usec >5usec
Vgs -6 to 22V -4 to 22V -6 to 20V
(surge
-10V to 26V)
Vgs op 18V 18V 15V
Internal Rg 6.3Ω 7Ω <3Ω
(same size)
Cgd 16nF 27nF <<16nF
(same size)
P. 19
SiC: A Brief Overview (Tips for Successful Use)
Consider the typical half-bridge topology:
© 2019 ROHM Co., Ltd. P. 16
Gate Driver Selection Criteria:
• Isolation Voltage Requirements (VIORM and VIOWM voltages)?
• Required Regulatory agency approvals in place?
• Automotive (AECQ) requirements?
• Creepage and clearance adequate?
• Appropriate temperature range?
• Input side supply current?
• Output drive current?
• Suitable CMR rating?
• Appropriate safety features?
• Cost and availability?
© 2019 ROHM Co., Ltd. P. 17
Propagation Delay Comparison example
Conditions: BM6105FW, ROHM Eval Board, VCC1=5.0V, VCC2=15V, VEE2=0V, INA=10kHz, OUT1_H/L=No
Load
Turn ON time (Ta = 25℃)
250
BM6105FW ACPL-336J
Opto coupler
（AVAGO）
40ns/div 40ns/div 200
Turn ON time(ACPL-336J)
Time (nsec)
150
Turn OFF time (ACPL-336J)
100 High
Turn OFF time (Ta = 25℃) Speed
Turn OFF time (BM6105FW)
BM6105FW ACPL-336J
40ns/div 40ns/div 50 Turn ON time（BM6105FW)
BM6105FW
0
-75 -50 -25 0 25 50 75 100 125 150 175
Ta (℃)
© 2019 ROHM Co., Ltd. P. 18
SiC: A Brief Overview (Tips for Successful Use)
• Use care when selecting your Isolated DC/DC Converter. Consider the following points:
• Breakdown Voltage Rating
• Capacitance from Primary to Secondary (<20pF)
• Common-Mode Rejection. Is it specified?
Suppliers of Converters include MuRata, Recom, CUI, and Mornsun
Estimated Power can be calculated from:
𝑷𝑷𝒈𝒈𝒂𝒂𝒕𝒕𝒆𝒆=𝑷𝑷𝒅𝒅𝒓𝒓𝒊𝒊𝒗𝒗𝒆𝒆𝒓𝒓+(𝑸𝑸𝒈𝒈𝒂𝒂𝒕𝒕𝒆𝒆𝒇𝒇𝒔𝒔𝒘𝒘Δ𝑽𝑽𝒈𝒈𝒂𝒂𝒕𝒕𝒆𝒆)+(𝑪𝑪gs𝒇𝒇𝒔𝒔𝒘𝒘Δ𝑽𝑽𝒈𝒈𝒂𝒂𝒕𝒕𝒆𝒆²)
or approximated by PDISS ≈ (CISS * 5) * (VCC2)2 * fs
© 2019 ROHM Co., Ltd. P. 19
SiC: A Brief Overview (Tips for Successful Use)
Check the Gate Drive signal:
© 2019 ROHM Co., Ltd. P. 20
SiC: A Brief Overview (Tips for Successful Use)
© 2019 ROHM Co., Ltd. P. 21
SiC: A Brief Overview (Tips for Successful Use)
Tektronix IsoVu Probe is the best ($ 15k - $20k)
Di ffer en t i a l P r o b e
Op t ica lly- is o la t e d P r o b e
© 2019 ROHM Co., Ltd. P. 22
SiC: A Brief Overview (Tips for Successful Use)
Vg s c o m p a r i s o n w i t h o p t i c a l l y i s o l a t e d p r o b e
D iffe re n t ia l P r o b e
O p t i c a l l y-i s o l a t e d
Probe
SiC: A Brief Overview (Tips for Successful Use)
Check to see that V(BR)DSS is not exceeded:
• What is the peak voltage from Source to Drain? Remember the
allowable voltage goes DOWN as the temperature goes DOWN:
© 2019 ROHM Co., Ltd. P. 24
BSM300D12P2E001 Voltage Surge Measurement Conditions
1200 24
Vsurge
Measurement Circuit Inductive Load Chopper 1000 VG 20
S
VD
Current 600A 800 S 16
VDS (V), ID
VGS（V
Drain Voltage 800V 600 12
Gate Voltage On 18V / Off 0V IDS
400 8
）
Gate Resistance 0.2ohm
(A)
200 4
Inductive Load 250uH 0 0
Junction Temperature 25ª, 125ª -200 -4
C-Snubber (1.2uF) 0.0 0.5 1.0 1.5 2.0
Snubber Circuit Nippon Chemi-con Time(us)
400
HACD1C2V125JTLJ Voltage rate
Z0
Gate Drive IC ROHM BM6103 300
Oscilloscope YOKOGAWA DL7480 25℃
Vsurge
200
YOKOGAWA 700924,
(V)
Differential Voltage Prove 125℃
701921
100
VDC + Voltage surge is under 1150V in this condition.
0
0 2 4 6 8 10
External Gate Resistance (ohm)
※ These data are provided to show a result of evaluation done by ROHM for your reference.
ROHM does not guarantee any of the characteristics shown here.
© 2019 ROHM Co., Ltd. P. 25
SiC: A Brief Overview (Tips for Successful Use)
Another example of cold vs. warm rating:
© 2019 ROHM Co., Ltd. P. 26
SiC: A Brief Overview (Tips for Successful Use)
Remember to use enough dead-time! We
recommend starting with 200 nanoseconds.
If you are using an optically isolated driver,
check the datasheet for propagation delay vs.
temperature.
Remember, MOSFETs take longer to turn-off at
minimum load current, not maximum load!
Use a Rogowski Current Probe to check for
shoot-through.
SiC MOSFETS tolerate only about 5 – 10 usec of
overcurrent before shorting.
Use a snubber if needed
© 2019 ROHM Co., Ltd. P. 27
Snubber module
Confidential
EVSM1D72J2-145MH26 EVSM1D72J2-145MH16
28 22
C type E type & G type
5
5
6.5
6.5
11
11
1200V 1200V
45
45
38 38
8.4
8.4
Capacitor (Murata)
KR355WD72J564MH01 (630VDC )
Note:
The capacitor has been mass produced.
The snubber module is only for evaluation use.
280nF 560nF
© 2019 ROHM Co., Ltd. (2 parallel) P. 28
Bibliography
Figure 1: D. Gautam, F. Musavi, M. Edington, W. Eberle "An Automotive On-Board 3.3 kW
Battery Charger for PHEV Application", Delta-Q Technologies Corp.
Figure 5: “Future Prospects of Widebandgap (WBG) Semiconductor Power Switching Devices”
Krishna Shenai, 2015 IEEE Transactions on Electron Devices
Figure 7: IXYS SiC Power MOSFET Data Sheet IXFN50N120SiC 2018 P.6
Page 22 Pictures: “Driving and Layout Requirements for Fast Switching MOSFETs” Won-suk
Choi, Dong-kook Son, Markus Hallenberger and Sungmo Young, Fairchild Semiconductor
Power Seminar 2010-2011
© 2019 ROHM Co., Ltd. P. 29
Parts may be found at Mouser using these links:
https://www.mouser.com/new/rohmsemiconductor/rohm-sic-power-devices/
https://www.mouser.com/new/rohmsemiconductor/rohm-sic-power-modules/
https://www.mouser.com/new/rohmsemiconductor/rohm-sic-power-mosfet/
https://www.mouser.com/new/rohmsemiconductor/rohm-sic-schottky-barrier-diodes/
https://www.mouser.com/new/rohmsemiconductor/rohm-aec-q101-sic-power-mosfets/
© 2018 ROHM Co.,Ltd. P. 30
© 2019 ROHM Co., Ltd.
