TF12A80

Standard Triac

Symbol TO-220F
VDRM = 800V
○ 2.T2
IT(RMS) = 12 A
▼▲
○ 3.Gate ITSM = 126A
1.T1 ○ 1
2
3

Features
◆ Repetitive Peak Off-State Voltage : 800V
◆ R.M.S On-State Current ( IT(RMS)= 1 A )
◆ High Commutation dv/dt

General Description

This device is suit able for low power AC switching application, phase control application such a s fan
speed and temperature modulation control, lighting control and static switching relay where high sensi-
tivity is required in all four quadrants.
This device may substitute for BTA12-600, BTB12-600, BT138-600, BCR12CM12L, TM1261M/S series.

Absolute Maximum Ratings ( Tj = 25°C unless otherwise specified )

Symbol Parameter Condition Ratings Units

VDRM Repetitive Peak Off-State Voltage Sine wave, 50 to 60 Hz 800 V

IT(RMS) R.M.S On-State Current Tj = 125 °C, Full Sine wave 12 A

One Cycle, 50Hz/60Hz, Peak,

ITSM Surge On-State Current 120/126 A
Non-Repetitive

I2 t I2 t tp = 10ms 72 A 2s

PG(AV) Average Gate Power Dissipation Tj=125°C 1 W

IGM Peak Gate Current Tj=125°C 2 A

TJ Operating Junction Temperature - 40 ~ 125 °C

TSTG Storage Temperature - 40 ~ 150 °C

J u l y, 2010. Rev.2 1/6

copyright @ Apollo Electron Co., Ltd. All rights reserved.
TF12A80
Electrical Characteristics (Tj=25 °C unless otherwise specified)

Ratings
Symbol Items Conditions Unit
Min. Typ. Max.

Repetitive Peak Off-State VD = VDRM, Single Phase, Half Wave

IDRM --- 2 .0 mA
Current Tj = 125 °C ---

VTM Peak On-State Voltage ITM = 17 A, tp=380㎲ --- --- 1.55 V

I+GT1 Ⅰ ─ ─ 30

I -GT1 Ⅱ Gate Trigger Current VD = 12V, RL=30 Ω ─ ─ 30 mA

I -GT3 Ⅲ ─ ─ 30

V+GT1 Ⅰ ─ ─ 1.5

V-GT1 Ⅱ Gate Trigger Voltage VD = 12 V, RL=30 Ω ─ ─ 1.5 V

V-GT3 Ⅲ ─ ─ 1.5

VGD Non-Trigger Gate Voltage TJ = 125 °C, VD = VDRM RL=3.3kΩ 0.2 ─ - V

Critical Rate of Rise Off-State TJ = 125 °C

dv/dt ─ ─ V/㎲
Voltage VD=2/3 VDRM 200

IH Holding Current IT=0.2A ─ -- 50 mA

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 TF12A80

Fig 1. Gate Characteristics Fig 2. On-State Voltage

2
10
VGM (10V)
1
10
PGM (5W) o
TJ = 125 C

On-State Current [A]

Gate Voltage [V]

PG(AV) (1W) 1
10
25 ℃
0

IGM (2A)
10
o
TJ = 25 C

0
10

VGD (0.2V)
-1
10
10
1
10
2 3
10 0.5 1.0 1.5 2.0 2.5 3.0 3.5

Gate Current [mA] On-State Voltage [V]

Fig 3. On State Current vs. Fig 4. On State Current vs.

Maximum Power Dissipation Allowable Case Temperature
16 130
Allowable Case Temperature [ oC]

o
14 θ θ = 180 o
π 2π θ = 150 120
Power Dissipation [W]

12 θ θ = 120
o

o 110
10 360° θ = 90
o
θ : Conduction Angle θ = 60 o
8 100 θ = 30
o π θ o
θ = 30 2π θ = 60
6
θ o
90 θ = 90
4 o
360° θ = 120o
80 θ : Conduction Angle
θ = 150 o
2 θ = 180
0 70
0 2 4 6 8 10 12 14 0 2 4 6 8 10 12 14
RMS On-State Current [A] RMS On-State Current [A]

Fig 5. Surge On-State Current Rating Fig 6. Gate Trigger Voltage vs.
( Non-Repetitive ) Junction Temperature
200 10
Surge On-State Current [A]

150

_
V
VGT (25 C)

60Hz
VGT (t C)

GT3
o
o

100 1
+
V GT1
_
V GT1
50 50Hz

0 0.1
10
0
10
1
10
2 -50 0 50 100 150
o
Time (cycles) Junction Temperature [ C]

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 TF12A80

Fig 7. Gate Trigger Current vs. Fig 8. Transient Thermal Impedance

Junction Temperature
10 10

Transient Thermal Impedance [ C/W]

o
IGT (25 C)
IGT (t C)
o
o

+
1 I GT1
1
_
I GT1

_
I GT3

0.1 0.1
-50 0 50 100 150 10
-2 -1
10 10
0 1
10
2
10
o
Junction Temperature [ C] Time (sec)

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 TF12A80

TO-220F Package Dimension

IN C H ES MILLIMETER S
Sym bol
MIN TYP MAX MIN TYP
A 9.88 10.08 10.28 25.10 25.60 26.11
B 15.30 15.50 15.70 38.86 39.37 39.88
C 2.95 3.00 3.05 7.49 7.62 7.75
D 10.30 10.50 10.70 26.16 26.67 27.18
E 0.95 1.08 1.20 2.41 2.74 3.05
F 1.81 1.84 1.87 4.60 4.67 4.75
G 0.50 0.70 0.90 1.27 1.78 2.29
H 3.00 3.20 3.40 7.62 8.13 8.64
I 4.35 4.45 4.55 11.05 11.30 11.56
J 6.20 6.40 6.60 15.75 16.26 16.76
K 0.41 0.51 0.61 1.03 1.28 1.54
L 2.30 2.50 2.70 5.84 6.35 6.86
M 2.53 2.73 2.93 6.43 6.93 7.44
N 2.34 2.54 2.74 5.94 6.45 6.96

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TF12A80
TO-220F Package Dimension, Forming

mm Inch
Dim.
Min. Typ. Max. Min. Typ. Max.
A 10.4 10.6 0.409 0.417
B 6.18 6.44 0.243 0.254
C 9.55 9.81 0.376 0.386
D 8.4 8.66 0.331 0.341
E 6.05 6.15 0.238 0.242
F 1.26 1.36 0.050 0.054
G 3.17 3.43 0.125 0.135
H 1.87 2.13 0.074 0.084
I 2.57 2.83 0.101 0.111
J 2.54 0.100
K 5.08 0.200
L 2.51 2.62 0.099 0.103
M 1.23 1.36 0.048 0.054
N 0.45 0.63 0.018 0.025
O 0.65 0.78 0.0025 0.031
P 5.0 0.197
φ 3.7 0.146
φ 1 3.2 0.126
φ 2 1.5 0.059

A
H I
F E

B
φ φ1

C φ2
L
G
1 M
D
2
1. T1
3
2. T2
N
O
3. Gate
J P
K

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