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Experiment: 5: AIM: Study of CB & CE Characteristics of Transistor Theory

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sanju

The document describes experiments to study the characteristics of npn and pnp transistors in common base and common emitter configurations. Circuit diagrams and procedures are provided to measure input and output characteristics by varying voltages and currents and recording the corresponding parameter values in a table. Input and output characteristic curves will then be plotted from the measured data.

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Experiment: 5: AIM: Study of CB & CE Characteristics of Transistor Theory

Uploaded by

sanju
5K views5 pages
The document describes experiments to study the characteristics of npn and pnp transistors in common base and common emitter configurations. Circuit diagrams and procedures are provided to measure input and output characteristics by varying voltages and currents and recording the corresponding parameter values in a table. Input and output characteristic curves will then be plotted from the measured data.

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EXPT 5

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The document describes experiments to study the characteristics of npn and pnp transistors in common base and common emitter configurations. Circuit diagrams and procedures are provided to measure input and output characteristics by varying voltages and currents and recording the corresponding parameter values in a table. Input and output characteristic curves will then be plotted from the measured data.

Copyright:

© All Rights Reserved
Download as DOCX, PDF, TXT or read online from Scribd
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5K views5 pages

Experiment: 5: AIM: Study of CB & CE Characteristics of Transistor Theory

Uploaded by

sanju
The document describes experiments to study the characteristics of npn and pnp transistors in common base and common emitter configurations. Circuit diagrams and procedures are provided to measure input and output characteristics by varying voltages and currents and recording the corresponding parameter values in a table. Input and output characteristic curves will then be plotted from the measured data.

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You are on page 1/ 5

EXPERIMENT: 5

AIM: Study of CB & CE characteristics of Transistor


THEORY:
A transistor has three doped regions there are two types of transistors one
is npn and other is pnp. Notice that for both types, the base is narrow region
sandwiched between the larger collector and moderate emitter regions.
In npn transistors, the majority current carriers are free electrons in the
emitter and collector, while the majority current carriers are holes in the base.
The opposite is true in the pnp transistor where the majority current carriers are
holes in the emitter and collector, and the majority current carriers are free
electrons in the base.
1. Emitter 2. Base 3. Collector
Schematic symbols for transistors

(a) npn transistor (b) pnp transistor.

When the leads of a transistor are spaced around the circumference of a circle,
the three leads are generally in E-B-C order clockwise from a notch.

In order for a transistor to function properly as an amplifier, the emitter-base


junction must be forward biased and the collector base junctions must be
reverse biased.
For CB configuration:
A transistor is a three terminal active device. T he terminals are emitter,
base, collector. In CB configuration, the base is common to both input (emitter)
and output (collector). For normal operation, the E-B junction is forward biased
and C-B junction is reverse biased. In CB configuration, IE is +ve, Ic is –ve
and Ib is –ve.
So, Veb=f1 (Vcb,Ie) and Ic=f2 (Vcb,Ib)

With an increasing the reverse collector voltage, the space-charge width


at the output junction increases and the effective base width „W‟ decreases.
This phenomenon is known as “Early effect”. Then, there will be less chance
for recombination within the base region. With increase of charge gradient
within the base region, the current of minority carriers injected across the
emitter junction increases. The current amplification factor of CB configuration
is given by,
α= ΔIC/ ΔIE
PROCEDURE

Input Characteristics:
1. Connect the transistor as shown in figure.
2. Keep the Vcb constant at 4V and 8V.Vary the Veb in steps and note
corresponding Ie values as per tabular form.
Output Characteristics:
1. Keep the Ie constant at 4mA and 8mA.Vary the Vcb in steps and note
corresponding Ic values.
2. Readings are tabulated as shown in tabular column.
CIRCUIT DIAGRAM:
TABULAR COLUMN:
INPUT CHARACTERISTICS: OUTPUT CHARACTERISTICS:

Vcb=-4v Vcb=-8v Ie=8mA Ie=4mA


Veb(volts Ie(mA) Veb(volts) Ie(mA) Vcb(v) Ic(mA) Vcb(v) Ic(mA)
)

FOR CE CONFIGURATION:
THEORY
A transistor is a three terminal device. The terminals are emitter, base,
collector. In common emitter configuration, input voltage is applied between
base and emitter terminals and output is taken across the collector and emitter
terminals. Therefore the emitter terminal is common to both input and output.
The input characteristics resemble that of a forward biased diode curve. This is
expected since the Base-Emitter junction of the transistor is forward biased.
As compared to CB arrangement Ib increases less rapidly with Vbe .
Therefore input resistance of CE circuit is higher than that of CB circuit.
The output characteristics are drawn between Ic and Vce at constant Ib. the
collector current varies with VCE unto few volts only. After this the collector
current becomes almost constant, and independent of Vce. The value of Vce up
to which the collector current changes with Vce is known as Knee voltage. The
transistor always operated in the region above Knee voltage, Ic is always
constant and is approximately equal to Ib.

The current amplification factor of CE configuration is given by


β = ΔIc/ΔIc
PROCEDURE

Input Characteristics:
1. Connect the transistor as shown in figure.
2. Keep the VCE constant at 2V and 6V.
3. Vary the IB in steps and note down the corresponding VEB values as per
tabular column.

Output Characteristics:
1. Keep the IB constant at 20 μA and 40 μA.
2. Vary the VCE in steps and note corresponding IC values.
3. Readings are tabulated as shown in tabular column

CIRCUIT DIAGRAM:
TABULAR COLUMN:
INPUT CHARACTERISTICS: OUTPUT CHARACTERISTICS:

Vcb=2v Vcb=6v Ib=20µA Ie=40µA


Vbe(volts Ib(µA) Vbe(volts Ib(µA) Vce(v) Ic(mA) Vce(v) Ic(mA)
) )

RESULTS : Input and Output characteristics of CB and CE are plotted.

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