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Basic Theory BJT

This document provides the basic theory behind modeling the temperature dependence of the base-emitter voltage (VBE) in a bipolar junction transistor (BJT). It derives an equation for VBE(T) by relating the collector current at different temperatures using an exponential relationship, and taking the natural log to isolate VBE(T). The resulting Equation A.9 expresses VBE(T) as the sum of a constant term, a linear term proportional to temperature T, and a higher-order term containing T.

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118 views3 pages

Basic Theory BJT

This document provides the basic theory behind modeling the temperature dependence of the base-emitter voltage (VBE) in a bipolar junction transistor (BJT). It derives an equation for VBE(T) by relating the collector current at different temperatures using an exponential relationship, and taking the natural log to isolate VBE(T). The resulting Equation A.9 expresses VBE(T) as the sum of a constant term, a linear term proportional to temperature T, and a higher-order term containing T.

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© © All Rights Reserved
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APPENDIX A

BASIC THEORY OF BJT

Suppose that the BJT is biased with a temperature-dependent current IC (T) which is

described as follows
✓ ◆m
T
IC (T ) = IC0 . (A.1)
T0

IC (0) is the current at temperature T0 and m is the order of temperature behavior of

the current. To develop the equation for VEB (T), the current at specified reference

temperature Tr must be considered as expressed in the following equation:

✓ ◆m
Tr
IC (Tr ) = IC0 . (A.2)
T0

The well-known equation of IC is used in this analysis, where the collector current is

exponentially on the base-emitter voltage.

q(VBE Vg0 )
IC = CT h exp , (A.3)
kT

where, Vg0 , C and h are the bandgap voltage at 0K, a constant, and a constant which is

related to the doping level, respectively.

By substituting Equation A.3 into Equations A.1 and A.2 the new equations are

49
obtained as,
✓ ◆m
T q(V BE(T ) Vg0 )
IC0 = CT h exp , (A.4)
T0 kT

and
✓ ◆m
Tr q(V BE(Tr ) Vg0 )
IC0 = CTrh exp . (A.5)
T0 kTr

To obtain the temperature dependence of base-emitter voltage VBE (T), Equation A.4

is divided with Equation A.5


( TTr )m q(VBE (T ) Vg0 ) q(VBE (Tr ) Vg0 )
= exp . (A.6)
( TTr )h kT kTr

By taking natural log at both side of Equation A.6 gives

✓ ◆m h
T q(VBE (T ) Vg0 ) q(VBE (Tr ) Vg0 )
ln = . (A.7)
Tr kT kTr

From Equation A.7, the voltage VBE (T) becomes

✓ ◆ ✓ ◆
T T kT T
VBE (T ) = Vg0 1 + VBE (Tr ) (h m) ln . (A.8)
Tr Tr q Tr

In circuit design, it is convenient to express VEB (T) in Equation A.8 as the sum of a

constant term, a term proportional to T , and a higher order term. Thus the Equation

A.8 can be rewritten as

 ✓ ◆
kTr k T
VBE (T ) = Vg0 + (h m) l T + (h
|{z} m) T Tr T ln , (A.9)
q q Tr
| {z } linear | {z }
constant high order

50
where,
Vg0 + (h m) kTqr VBE (Tr )
l= . (A.10)
Tr

51

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