Logic Roadmap

July 2016

Confidential
0
Introduction
2015 saw both Samsung and TSMC deliver their first finFET product with the Exynos 7420 and Apple
A9 processors, respectively. While both talk of having their 10 nm node in production by the end of
2016, TSMC may be first with the upcoming Apple A10 processor, due Sept 2016. This may be delayed
to the A11 processor expected in 2017. Samsung’s first 10 nm product might be the Qualcomm
Snapdragon 830. This could mark the first time that a pure-play foundry has beaten Intel to a new
process node as Intel’s 10 nm node Cannonlake is expected be released in the second half of 2017.

GlobalFoundries entered production of its 14 nm finFET process in 2015, and we anticipate delivery of
AMD’s Polaris family of graphics cards based on this process in July 2016.

STMicroelectronics is in production with their 28 nm FD-SOI process as seen in SFARDS SF3301, the
world’s first 28 nm node dual-algorithm Bitcoin and Litecoin mining chip. GlobalFoundries has been
promoting their 22 nm FD-SOI process since 2015 and we may see product in late 2016 or early 2017.

Finally both UMC and SMIC are working on finFET transistors with production expected in a few years
time.

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Structural Analysis Schedule

Reports Report Availability

SMIC 40 nm LP - Rockchip RK3028A Published Feb 2016
TSMC 16 nm finFET - Apple A9 Published Nov 2015
Samsung 14 nm LPP - Qualcomm Snapdragon 820 Published July 2016
GlobalFoundries 14 nm finFET - AMD Polaris 10 H2 2016
TSMC 10 nm - Apple A11 Late 2016 to early 2017

Samsung 10 nm - Qualcomm MSM8998 Snapdragon 830 Early 2017

Intel 10 nm - Cannonlake H2 2017

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About our Structural Analysis Reports
Industry expert commentary is combined with SEM and TEM
images, TEM-EDS and TEM-EELS data to provide detailed
analyses of the structures and materials used to fabricate state-
of-the-art integrated circuits. Process features such as the
substrate and isolation; peripheral, I/O and high voltage
transistors; dielectrics, metallization, passive components, SRAM
and standard logic layout are included in these comprehensive
reports.

Example Table of Contents

• Executive Summary
• Major Findings
• Device Summary
• Process Summary
• Package and Die Overview
• Process
• 6T SRAM Cell (plan view and cross-sectional)
• Materials Analysis
• Critical Dimensions
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Advanced Logic Scaling

Trend line is fitted to Intel’s

process as it historically leads in
process technology. However,
TSMC may be the first foundry to
commercialize a 10 nm node
product with the Apple A11
processor.

TSMC 10 nm expected in the

Apple A11 in 2017

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Logic Roadmaps
Node 2014 2015 2016 2017 2018 2019
28 nm
HKMG

22/20 nm

16/14 nm
FinFET

10 nm

7 nm

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FD-SOI Roadmaps

Node 2015 2016 2017

28 nm
FD-SOI

22 nm
FD-SOI

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Transistor Scaling

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16/14 nm finFET Comparison

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16/14 nm finFET Comparison

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Another View of Scaling

The product of the contacted gate

and minimum metal pitches
(minimum area) gives an indication
of the density achievable for a given
process node. Intel has kept to the
trend line for its 14 nm process,
while Samsung’s 14 nm and TSMC’s
16 nm processes featured relaxed
metal pitches and increased
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minimum area. | TechInsights
Intel Roadmap
icroarchitecture CPU series Tick or Tock Fab node Year Released

Presler/Cedar Mill Pentium 4 / D Tick 65 nm 2006

Conroe/Merom Core 2 Duo/Quad Tock 65 nm 2006

Penryn Core 2 Duo/Quad Tick 45 nm 2007

Nehalem Core i Tock 45 nm 2008

Westmere Core i Tick 32 nm 2010

Sandy Bridge Core i 2xxx Tock 32 nm 2011

Ivy Bridge Core i 3xxx Tick 22 nm 2012

Haswell Core i 4xxx Tock 22 nm 2013

Broadwell Core i 5xxx Tick 14 nm 2014 & 2015 for desktops

Skylake Core i 6xxx Tock 14 nm 2015

Kaby lake Core i 7xxx Tock 14 nm 2016

Cannonlake Core i 8xxx? Tick 10 nm 2017 1st 10 nm product in 2017

Ice Lake Core i 8xxx? Tock 10 nm 2018

Tigerlake Core i 9xxx? Tock 10 nm 2019

N/A N/A Tick 5 nm 2020

http://www.fudzilla.com/news/processors/39735-intel-s-10nm-set-for-2017
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GlobalFoundries CMOS Gate Evolution

J. Hoentschel and A. Wei

Semiconductor Technology International Conference (CSTIC), 2015 China. Pp 1-4

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GlobalFoundries Metal Gate Transistors

32 nm NMOS 28 nm NMOS
Gate first HKMG transistor Gate first HKMG

Custom Integrated Circuits Conference (CICC) 2015 IEEE pp1-8

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UMC Roadmap

UMC 28 nm node processes

http://www.umc.com/english/process/a.asp

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UMC Metal Gate Transistors

28 nm NMOS 28 nm PMOS
gate last HKMG transistor gate last HKMG transistor
2015 2015

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SMIC Transistors

HKMG finFET
40 nm Poly Gate 28 nm Poly/SiON

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STMicroelectronics 28 nm FD-SOI

http://www.st.com/web/en/about_st/learn_fd-soi.html

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Reports Resources
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Latest process analysis report listings:

Process Analysis Analysis

Rockchip RK3028A SoC SMIC 40 nm LP Process Structural

TSMC 16 nm finFET Process in Apple A9 Processor Structural

Qualcomm Snapdragon 820 using Samsung’s 14 nm LPP finFET Structural

Process

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