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NN V V N: PN - Junction Diode

A PN junction is formed with a P-region doped with acceptors at a concentration of 1014 cm-3 and an N-region doped with donors at a concentration of 1015 cm-3 at a temperature of 300K. Using the given doping concentrations, intrinsic carrier concentration at 300K, and the formula for built-in potential, the built-in potential barrier of the PN junction is calculated to be 0.397V.

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Vaalu Siva
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77 views1 page

NN V V N: PN - Junction Diode

A PN junction is formed with a P-region doped with acceptors at a concentration of 1014 cm-3 and an N-region doped with donors at a concentration of 1015 cm-3 at a temperature of 300K. Using the given doping concentrations, intrinsic carrier concentration at 300K, and the formula for built-in potential, the built-in potential barrier of the PN junction is calculated to be 0.397V.

Uploaded by

Vaalu Siva
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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PN - JUNCTION DIODE

Problem: Assume a PN-Junction at T=300k, dopped at acceptor concentration in the P-region


of 1014 cm-3 and donor concentration in the n-region of 1015cm-3. Find the built in
potential barrier of PN Junction?

N N 
Answer: We have ni  15 1010 cm3 for Si at room temperature Vbi  VT ln  a 2 d 
 ni 
So, we have Na-Acceptor Concentration, Nd-Donor Concentration, T=300K and ni-
intrinsic carrier concentration.
KT
VT 
e
K  Boltzmann const.,
K  1.38 1023

1.38 1023  300


VT 
1.6 1019
VT  258.75 104  0.026 V

 14 
10 1015 
Vbi  0.026  ln   0.397
 15 1010 2 
 

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