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Problem: Given and Calculate The Intrinsic Carrier Concentration and For Ge and Gaas at 300K? Answer: Material Si 1.1 Gaas 1.4 Ge 0.66

The document provides calculations for intrinsic carrier concentration (ni) and built-in potential (Vbi) for Ge and GaAs semiconductors at 300K. It shows that: 1) For Ge, ni = 2.9 x 1013 cm-3 and Vbi = 0.3637 V. 2) For GaAs, ni = 5.08 x 1019 cm-3 and Vbi = -0.144898 V. 3) The calculations use the intrinsic carrier concentration equation and relationships between intrinsic carrier concentration, thermal voltage, and doping concentrations to determine Vbi.

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0% found this document useful (0 votes)
228 views1 page

Problem: Given and Calculate The Intrinsic Carrier Concentration and For Ge and Gaas at 300K? Answer: Material Si 1.1 Gaas 1.4 Ge 0.66

The document provides calculations for intrinsic carrier concentration (ni) and built-in potential (Vbi) for Ge and GaAs semiconductors at 300K. It shows that: 1) For Ge, ni = 2.9 x 1013 cm-3 and Vbi = 0.3637 V. 2) For GaAs, ni = 5.08 x 1019 cm-3 and Vbi = -0.144898 V. 3) The calculations use the intrinsic carrier concentration equation and relationships between intrinsic carrier concentration, thermal voltage, and doping concentrations to determine Vbi.

Uploaded by

Vaalu Siva
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as DOCX, PDF, TXT or read online on Scribd
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PN - JUNCTION DIODE

Problem: Given Na  1016 cm3 and Nd  1017 cm 3 calculate the intrinsic carrier
concentration and Vbi for Ge and GaAs at 300K?

Answer:
Material Eg  ev  
3
B(cm3 K 2 )
Si 1.1 5.23 1015
GaAs 1.4 1.6  1015
Ge 0.66 1.66  1015

3  g 
E
 2 KT 
ni  BT e 2  

3  0.66 
 
( for Ge) n i  1.66 10   300   e
15
2  23001.381023 

ni  2.9  1013

1.38 1023  300


VT   0.026V
1.6 1019

 
 1016 10n 
Vbi  0.026  ln
  2.9 1013 2 
 

Vbi  0.3637v
 
 1.4 
3

 2300 1.38102
 
GaAs ni  2.1 1014   300   e 2  

ni  5.08 1019
VT  0.026 V
 
1016 1017 
Vbi  0.026  ln 
  5.08 1019 2 
 
 0.026  5.573  0.144898 V

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