<Szm.L-donciu.ctoi ^PiodacU, line.
20 STERN AVE. TELEPHONE: (973) 376-2922
SPRINGFIELD, NEW JERSEY 07081 (212)227-6005
U.S.A. FAX: (973) 376-8960
TIC106A, TIC106B, TIC106C, TIC106D,
TIC106E,TIC106F,TIC106M
P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS
• Silicon Controlled Rectifiers
• 50V to 600V
• 5 A DC
• 30 A Surge Current
• MAX IQT of 200 A
device schematic
TO-Z2DAB PACKAGE
THE ANODE IS IN ELECTRICAL CONTACT WITH
THE MOUNTING TAB. THE DATE TERMINAL IS
CONNECTED TO A "f" REGION.
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
TIC106F TIC106A TIC108B TIC108C
Repetitive peak off-state voltage, VQRM (see Note 1 ) 50V 100V 200V- 300V
Repetitive peak reverse voltage, VRRM 60V 100V 200V 300V
Continuous on-state current at (or below) 80°C case temperature (see Note 2) BA
Average on-state current (1 80° conduction angle) at (or below)
3.2A
80°C case temperature (see Note 3)
Surge on-state current (see Note 4) 30 A
Peak positive gate current (pulse duration < 300 ps) 0.2 A
Peak gate power dissipation (pulse duration < 300 ps) 1.3W
Average gate power dissipation (see Note 5) 0.3 W
Operating case temperature range -40«Cto110°C
Storage temperature range -40°Cto125°C
Lead temperature 1,6mm (1/1 6 Inch) frorn case for 10 seconds 230°C
NOTES: 1. These values apply when the gate-cathode resistance RQK » I kQ.
2. These values apply for continuous d-c operation wtth resistive load. Above 80CC derate according to Figure 3.
3. This value may be applied continuously under single-phase 50-Hz half-slne-wave operation with reslatlve load. Above 80°C
derate according to Figure 3.
4. This value applies for one 50-Hz Mf-sine-wave when the device is operating at ior below) rated valutt of ptak reverse
voltage and on-3tate current. Surge may be repeated after the device has returned to original thermal equilibrium.
5. This value applies for a maximum averaging time of 20 ms.
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to.be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
TIC106A, TIC106B, TIC106C, TIC106D,
TIC106E,TIC106F,TIC106M
P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
TIC106D TIC106E TIC106M
Repetitive peak off-state voltage, VQRM (see Note 1 } 400V 500V 600V
Repetitive peak reverse voltage, VRRM 400V 600V 600V
Continuous on-state current at (or below) 80°C case temperature (see Note 2) BA
Average on-state current (1 80° conduction angle} et (or below)
3.2A
80°C casa temperature (see Note 3}
Surge on-state current (see Note 4} 30 A
Peak positive gate current (pulse duration < 300 us) 0.2 A
Peak gete power dissipation Ipulsa duration < 300 pg) 1,3W
Average gate power dissipation (see Note 5) 0.3W
Operating case temperature range -40°Cto110°C
Storage temperature range -40 'Cto-WC
Lead temperature 1,6mm (1/1 6 inch) from case for 10 seconds 230°C
NOTES: 1. These values apply when the gate-cathode resistance RQK = 1 kfi.
2. These values apply for continuous d-c operation with resistive load. Above 6O*C derate according to Figure 3.
3. This value may be applied continuously under single-phase 50-Hz half-slne-wave operation with resistive load. Above 8O°C
derate according to Figure 3.
4. This value applies for one 50-M2 haif-slne-wave when the device Is operating at (or below) rated values of peak reverse
voltage and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium,
5. This value applies for a maximum averaging time of 20 m$.
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
IDHM R<""ititiv<"'Mk VD - Rated VDRM, RGK = i ka, Tc « i io°c 4OO CA
Off-State Current
IRRM ReP=*lv»P"k VR = Rated VRRM, IG = 0, TC = 110°C 1 mA
Reverse Current
IQY Gate Trigger Current VAA = 6V. R L =1000. tw(0)i»20HS 60 200 ^A
VAA = 6V, RL = 1000. RQK - 1 ka
1.2
t w(g) >20 M s, TC=-40°C
VA A = e v, RL » 100Q, HQK » i ko,
VGT Gate Trigger Voltage 0.4 0.6 1 V
tw[fl);» 20 us.
VAA = ev, H L =IOOB, RGK = ika,
0.2
•wlfl) * 2°fs- TC = - 1 10°C
VAA = 6V, RQK = i ka, initiatina IT = iomA E
IH Holding Current V AA = 6V, RGK = 1 ka, Initiating IT ~ tOmA, mA
TC = -40«C
e
VTM Peak On-State Voltage I T M .5A, See Note 6 1.7- V
dv/dt Critical Rate of Rise VD = Rated VD, HQK = 1 kQ, TC = 110°C 10 V/ta
of Off-State voltage
NOTE 6: These parameters must be measured using pulse techniques, tw = 300 ps, duty cycle < 2 %. Voltage-sensing
separata from the current-carrying contacts, are located within 3,2 mm (1/8 inch) from the device body.
thermal characteristics
PARAMETER MIN TYP MAX UNIT
R0JC 3.6
•C/W
RSJA 62,6
TIC106A, TIC106B. TIC106C, TIC106D,
TIC106E,TIC106F,TIC106M
P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS
resistive-load switching characteristics at 25°C case temperature
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Gate-Controlled VAA = 30 v. RL = s a. RGKiott i = 6 kc. 1.76
Ql Turn-On Time V|na50V, Sea Figure 1
IIS '
Circuit-Commutated VAA = 30V. RL = 69, ' IRM = 8A,
7.7
tq Tum-Off Time See Figure 2
PARAMETER MEASUREMENT INFORMATION
v2 o.
Vi o.
VOLTAGE WAVEFORMS WAVEFORMS
TEST CIRCUIT TEST CIRCUIT
FIGURE 1 . GATE-CONTROLLED TURN-ON TIME FIGURE 2. CIRCUIT-COMMUTATED TURN-OFF TIME
A. V;n Is meaaured with gate and cathode terminals open.
B. The input waveform of Figure 1 has the following characteristics: tr < 40 ns, tw > 20 ia.
C..Waveforms are monitored on an oscilloscope with the following characteristics: tr< 14ns, R|n* 10MB, C(n< 12pF.
D. RGKIeff ) includes the total resistance of the generator and the external resistor.
E. Pulse generators for V-) and V2 are synchronized to provide an anode current waveform wrrh the following characteristics:
tm = 60 to 300 its, duty cycle = 1 %. The pulse widths of V j and Vj are > 10j«.
F. Resistor RI is adjusted for !RM= 8 A.
