2 SD 2141

Equivalent circuit
2SD2141
Silicon NPN Triple Diffused Planar Transistor
ICBO
VCEO
38050
IEBO
VEBO
V(BR)CEO
6(Pulse10)
hFE
IC
Symbol
Conditions
VCB=330V
10max
VEB=6V
20max
mA
IC=25mA
330 to 430
1500min
VCE=2V, IC=3A
VCE(sat)
IC=4A, IB=20mA
1.5max
PC
35(Tc=25C)
fT
VCE=12V, IE=0.5A
20typ
MHz
150
COB
VCB=10V, f=1MHz
95typ
pF
55 to +150
Tstg
4.20.2
2.8 c0.5
3.30.2
a
b
13.0min
IB
Tj
10.10.2
4.00.2
38050
Unit
0.80.2
Unit
VCBO
External Dimensions FM20(TO220F)
(Ta=25C)
Ratings
3.9
Ratings
0.2
Electrical Characteristics
Symbol
(1.5k)(100) E
8.40.2
Absolute maximum ratings (Ta=25C)
Application : Ignitor, Driver for Solenoid and Motor, and General Purpose
16.90.3
Built-in Avalanche Diode

for Surge Absorbing
Darlington
1.350.15
1.350.15
0.85 +0.2
-0.1
0.45 +0.2
-0.1
2.54
2.54
2.40.2
2.20.2
Weight : Approx 2.0g

a. Part No.
b. Lot No.
B C E
0.2
Collector-Emitter Voltage V C E (V)
0.5
10
50
10000
(V C E =2V)
5000
1000
500
100
50
12
1000
25
500
Transient Thermal Resistance
DC Cur rent Gain h F E
Typ
100
50
0.1
0.5
20
0.02
10
0.1
1.0
0.5
f T I E Characteristics (Typical)
Temp
2.4
10
1
0.5
0.1
10
Collector Current I C (A)
2.0
j-a t Characteristics
h FE I C Temperature Characteristics (Typical)

10000
10
0.02
1.0
Base-Emittor Voltage V B E (V)
(V C E =2V)
5000
Base Current I B (mA)
h FE I C Characteristics (Typical)
DC Cur rent Gain h F E
100 200
p)
25
12
j- a ( C/W)
(Case
1A
30C
5
p)
I C =7A
5A
3A
em
I B =1 mA
Tem
eT
2mA
ase
4mA
(V CE =4V)
10
A
20m mA
18
as
(C
5C
0
15
10
I C V BE Temperature Characteristics (Typical)
V CE ( sat ) I B Characteristics (Typical)
90mA 60mA
120mA
C (C
I C V CE Characteristics (Typical)
100
1000
Time t(ms)
Safe Operating Area (Single Pulse)
P c T a Derating
(V C E =12V)
40
20
40
Natural Cooling
Silicone Grease
Heatsink: Aluminum
in mm
10
M aximum Po wer Dissipation P C (W)
Collector Curre nt I C (A)

Emitter Current I E (A)
148
0.01
1
10
50
100
Collector-Emitter Voltage V C E (V)
500
nk
0.5
150x150x2
10
si
01
at
0.05
he
0
0.01
ite
0.05
20
fin
Without Heatsink
Natural Cooling
In
0.1
ith
1
0.5
30
Cu t-off Fre quen cy f T (M H Z )
1ms
10
0m
ms
10
5
30
20
10
Typ
100x100x2
50x50x2
2
0
Without Heatsink
0
25
50
75
100
125
Ambient Temperature Ta(C)
150

2 SD 2141

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2 SD 2141

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Equivalent circuit

Silicon NPN Triple Diffused Planar Transistor

External Dimensions FM20(TO220F)

Absolute maximum ratings (Ta=25C)

Built-in Avalanche Diode

Weight : Approx 2.0g

Collector-Emitter Voltage V C E (V)

Transient Thermal Resistance

DC Cur rent Gain h F E

Collector Current I C (A)

Collector Current I C (A)

h FE I C Temperature Characteristics (Typical)

Base Current I B (mA)

DC Cur rent Gain h F E

Collector Current I C (A)

Collector Current I C (A)

I C V BE Temperature Characteristics (Typical)

V CE ( sat ) I B Characteristics (Typical)

Collector Current I C (A)

Safe Operating Area (Single Pulse)

Collector Curre nt I C (A)

Collector-Emitter Voltage V C E (V)

Cu t-off Fre quen cy f T (M H Z )

Ambient Temperature Ta(C)

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