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Silicon NPN Triple Diffused Planar Transistor: (High Voltage and High Speed Switchihg Transistor)

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1) This document provides specifications for the 2SC4418 silicon NPN triple diffused planar transistor, including its maximum ratings, electrical characteristics, and typical switching and thermal characteristics. 2) The transistor is intended for use in switching regulators and general purpose applications. It has a maximum collector-emitter voltage of 500V and collector current of 5A. 3) Typical switching times are 1 microsecond for turn on time and 2.5 microseconds for storage time at a collector current of 1.5A. Electrical characteristics include a current gain of 10 to 30 and saturation voltages below 1.3V.

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Silicon NPN Triple Diffused Planar Transistor: (High Voltage and High Speed Switchihg Transistor)

Uploaded by

lookb6
8 views1 page
1) This document provides specifications for the 2SC4418 silicon NPN triple diffused planar transistor, including its maximum ratings, electrical characteristics, and typical switching and thermal characteristics. 2) The transistor is intended for use in switching regulators and general purpose applications. It has a maximum collector-emitter voltage of 500V and collector current of 5A. 3) Typical switching times are 1 microsecond for turn on time and 2.5 microseconds for storage time at a collector current of 1.5A. Electrical characteristics include a current gain of 10 to 30 and saturation voltages below 1.3V.

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2sc4418

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1) This document provides specifications for the 2SC4418 silicon NPN triple diffused planar transistor, including its maximum ratings, electrical characteristics, and typical switching and thermal characteristics. 2) The transistor is intended for use in switching regulators and general purpose applications. It has a maximum collector-emitter voltage of 500V and collector current of 5A. 3) Typical switching times are 1 microsecond for turn on time and 2.5 microseconds for storage time at a collector current of 1.5A. Electrical characteristics include a current gain of 10 to 30 and saturation voltages below 1.3V.

Copyright:

Attribution Non-Commercial (BY-NC)
Download as PDF, TXT or read online from Scribd
Download as pdf or txt
8 views1 page

Silicon NPN Triple Diffused Planar Transistor: (High Voltage and High Speed Switchihg Transistor)

Uploaded by

lookb6
1) This document provides specifications for the 2SC4418 silicon NPN triple diffused planar transistor, including its maximum ratings, electrical characteristics, and typical switching and thermal characteristics. 2) The transistor is intended for use in switching regulators and general purpose applications. It has a maximum collector-emitter voltage of 500V and collector current of 5A. 3) Typical switching times are 1 microsecond for turn on time and 2.5 microseconds for storage time at a collector current of 1.5A. Electrical characteristics include a current gain of 10 to 30 and saturation voltages below 1.3V.

Copyright:

Attribution Non-Commercial (BY-NC)
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2SC4418

Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) IAbsolute maximum ratings (Ta=25C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC4418 500 400 10 5(Pulse10) 2 30(Tc=25C) 150 55 to +150 Unit V V V A A W C C

Application : Switching Regulator and General Purpose External Dimensions FM20(TO220F)


4.00.2 10.10.2 4.20.2 2.8 c0.5

IElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=500V VEB=10V IC=25mA VCE=4V, IC=1.5A IC=1.5A, IB=0.3A IC=1.5A, IB=0.3A VCE=12V, IE=0.3A VCB=10V, f=1MHz

(Ta=25C) 2SC4418 100max 100max 400min 10 to 30 0.5max 1.3max 20typ 30typ V V MHz pF Unit

A
V
16.90.3 8.40.2

13.0min

1.350.15 1.350.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.20.2 2.40.2

ITypical Switching Characteristics (Common Emitter)


VCC (V) 200 RL () 133 IC (A) 1.5 VBB1 (V) 10 VBB2 (V) 5 IB1 (A) 0.15 IB2 (A) 0.3 ton (s) 1max tstg (s) 2.5max tf (s) 0.5max

2.54

3.9 B C E

I C V CE Characteristics (Typical)
5
1.8 A

V CE (sat),V BE (sat) I C Temperature Characteristics (Typical)


Collector-Emitter Saturation Voltage V C E (s a t) (V ) Base-Emitter Saturation Voltage V B E (s at) (V ) (I C /I B =5) V C E (sat) 2
55C (Case Temp)
125C (Case Temp)

I C V BE Temperature Characteristics (Typical)


5 (V CE =4V)

1.4 A

1A
4 Collector Current I C (A)

60 0m A
3
400 mA

Collector Current I C (A)

25C (Case Temp)

200 mA

100 mA
I B =50mA

C(

12

25

0 0.01

0.05

0.1

0.5

55

C (

5C

55C (Case Temp) Temp) 25C (Case p) ase Tem (C C 5 12

eT em Tem p) Cas p e Te ) mp)

V B E (sat)

as

(C

Ca

se

0.2

0.80.2

a b

3.30.2

Weight : Approx 2.0g a. Type No. b. Lot No.

1.0 Base-Emittor Voltage V B E (V)

1.6

Collector-Emitter Voltage V C E (V)

Collector Current I C (A)

h FE I C Characteristics (Typical)
(V C E =4V) 100 8

t on t stg t f I C Characteristics (Typical)


j - a (C /W)
5

j-a t Characteristics

t o n t s t g t f ( s)

DC C urrent G ain h FE

V C C 200V I C :I B1 :I B2 =10:1:2 1 0.5 tf t on 0.1 0.1 0.5

t s tg

10 5

Transient Thermal Resistance

50

Typ

Sw it ching Time

2 0.01

0.05

0.1

0.5

0.5 0.4

10 Time t(ms)

100

1000

Collector Current I C (A)

Collector Current I C (A)

Safe Operating Area (Single Pulse)


20 10 5 Collector Cur rent I C (A)
DC
10
1m s
10

Reverse Bias Safe Operating Area


20 30

P c T a Derating

5 Collect or Cur re nt I C (A)

M aximum Power Dissipa ti on P C ( W)

50

10

ith

20

In fin

1 0.5

1 0.5

ite he at si nk

0.1 0.05 Without Heatsink Natural Cooling

0.1 0.05

Without Heatsink Natural Cooling L=3mH IB2=0.5A Duty:less than 1%

10

Without Heatsink 2 0.01 2 5 10 50 100 500 0.01 5 10 50 100 500 0 0 25 50 75 100 125 150

Collector-Emitter Voltage V C E (V)

Collector-Emitter Voltage V C E (V)

Ambient Temperature Ta(C)

103

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