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Material: Silicon (Si), bulk
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Property
Value
Conditions
Reference
Coefficient of static friction
0.16
Wafer,used as a mover,min voltage to
remove the mover=1176 V, bottom of
the mover is glass plate
IEEE Micro Electro Mechanical
Systems Workshop,Jan-Feb 1991,
Nara,Japan, p.151
Coefficient of static friction
0.38
Wafer,used as a mover,min voltage to
move the mover=1575 V, bottom of the
mover is Silicon substrate,thickness=0.5
mm.
IEEE Micro Electro Mechanical
Systems Workshop,Jan-Feb 1991,
Nara,Japan, p.151
Coordination number
Silicon<111>,crystalline,undoped
polished, obtained by SAW
technique,using the ns Nd:YAG at 355
nm for launching and the probe beam
deflection arrangement for detecting
SAW pulses.
Applied Surface
Science,106(1996), p.433
Density
2330 kg/m^3
Solid Density
CRC Materials Science and
Engineering Handbook, p.46
Density
2330 kg/m^3
Silicon<111>,crystalline,undoped
polished, obtained by SAW
technique,using the ns Nd:YAG at 355
nm for launching and the probe beam
deflection arrangement for detecting
SAW pulses.
Applied Surface
Science,106(1996), p.433
Elastic recovery during
unloading
0.56
Si<001> substrate,uncoated,using
nanoindentation method and load
displacement curves for calculation.
Thin Solid Films,246(1994), p.108
Friction coefficient
0.05
Undoped silicon,at the begining of
scratching & from an abrupt increase in
friction during scratching, width of
scratch(1.25um) at about 17-20 mN
normal load(measured from SEM
images),critical load=10 mN.
J.Mater.Res,Vol.12,No.1,Jan 1997,
p.59
Friction coefficient
0.25
P+type silicon<100>,at the begining of
scratching & from an abrupt increase in
friction during scratching, width of
scratch(1.75 um) at about 17-20 mN
normal load(measured from SEM
images),critical load=7 mN.
J.Mater.Res,Vol.12,No.1,Jan 1997,
p.59
Friction coefficient
0.45 .. 0.6
P+type silicon<100> ,at the end of
scratching & from an abrupt increase in
friction during scratching, width of
scratch(1.75 um) at about 17-20 mN
normal load(measured from SEM
images),critical load=7 mN.
J.Mater.Res,Vol.12,No.1,Jan 1997,
p.59
Friction coefficient
0.45
Undoped silicon ,at the end of
scratching & from an abrupt increase in
friction during scratching, width of
scratch(1.25 um) at about 17-20 mN
normal load(measured from SEM
images),critical load=10 mN.
J.Mater.Res,Vol.12,No.1,Jan 1997,
p.59
Friction coefficient
0.03
Single crystal,orientation <111>,scan
size=500X500 nm2,using nanotribology
studies(AFM/FFM).
IEEE Micro Electro Mechanical
Systems Workshop,SanDiego,
California, Feb 1996, p.97
Friction coefficient,final
0.11
Single crystal
silicon<100>,undoped,sliding against a
spherical diamond tip (radius=20um)at
10 mN normal load, 7.0 mmstroke
length,0.1 Hz frequency,and 1.0
mm/sec average linear speed for a
sliding distance of 4m under an ambient
temperature of about 22+-1 C and a
relative humidity of about 45+-5% RH.
J.Mater.Res,Vol.12,No.1,Jan 1997,
p.60
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Property
Value
Conditions
Reference
Friction coefficient,final
0.11
Single crystal silicon<100>,p+type
,sliding against a spherical diamond tip
(radius=20um)at 10 mN normal load,
7.0 mmstroke length,0.1 Hz
frequency,and 1.0 mm/sec average
linear speed for a sliding distance of 4m
under an ambient temperature of about
22+-1 C and a relative humidity of about
45+-5% RH.
J.Mater.Res,Vol.12,No.1,Jan 1997,
p.60
Friction coefficient,final
0.65
Single crystal silicon<100>,p+type,
sliding against a single-crystal sapphire
ball(diameter=3mm)7.0 mm stroke
length,0.1 Hz frequency,and 1.0
mm/sec average linear speed for a
sliding distance of 4m under an ambient
temperature of about 22+-1 C and a
relative humidity of about 45+-5% RH.
J.Mater.Res,Vol.12,No.1,Jan 1997,
p.60
Friction coefficient,final
0.33
Single crystal silicon<100>,undoped,
sliding against a single-crystal sapphire
ball(diameter=3mm)7.0 mm stroke
length,0.1 Hz frequency,and 1.0
mm/sec average linear speed for a
sliding distance of 4m under an ambient
temperature of about 22+-1 C and a
relative humidity of about 45+-5% RH.
J.Mater.Res,Vol.12,No.1,Jan 1997,
p.60
Friction coefficient,initial
0.11
Single crystal
silicon<100>,p+type,sliding against a
spherical diamond tip (tip radius, 20 um)
at 10 mN normal load, 7.0 mm stroke
length, 0.1 Hz frequency,and 1.0
mm/sec average linear speed for a
sliding distance of 4 m under an
ambient temperature of 22 +-1 deg C
and a relative humidity of about 45
+-5% RH.
J.Mater.Res,Vol.12,No.1,Jan 1997,
p.60
Friction coefficient,initial
0.09
Single crystal
silicon<100>,undoped,sliding against a
spherical diamond tip (tip
radius,20um)at 10 mN normal load, 7.0
mm stroke length, 0.1 Hz frequency,and
1.0 mm/sec average linear speed for a
sliding distance of 4 m under an
ambient temperature of 22 +-1 deg C
and a relative humidity of about 45
+-5% RH.
J.Mater.Res,Vol.12,No.1,Jan 1997,
p.60
Friction coefficient,initial
0.37
Single crystal
silicon<100>,undoped,sliding against a
single-crystal sapphire
ball(diameter,3mm) at 10 mN normal
load,7.0 mmstroke length,0.1 Hz
frequency,and 1.0 mm/sec average
linear speed for a sliding distance of 4m
under an ambient temperature of about
22+-1 C and a relative humidity of about
45+-5% RH.
J.Mater.Res,Vol.12,No.1,Jan 1997,
p.60
Friction coefficient,initial
0.69
Single crystal
silicon<100>,p+type,sliding against a
single-crystal sapphire
ball(diameter,3mm) at 10 mN normal
load,7.0 mmstroke length,0.1 Hz
frequency,and 1.0 mm/sec average
linear speed for a sliding distance of 4m
under an ambient temperature of about
22+-1 C and a relative humidity of about
45+-5% RH.
J.Mater.Res,Vol.12,No.1,Jan 1997,
p.60
Friction coefficient,micro
0.04
Single crystal<110>,scan size=500X500
nm2,using nanotribology
studies(AFM/FFM).
IEEE Micro Electro Mechanical
Systems Workshop,SanDiego,
California,Feb 1996, p.97
Friction coefficient,micro
0.03
Single crystal<100>,scan size=500X500
nm2,using nanotribology
studies(AFM/FFM).
IEEE Micro Electro Mechanical
Systems Workshop,SanDiego,
California,Feb 1996, p.97
Friction coefficient,micro
0.02
C+ implanted Si<111>
IEEE Micro Electro Mechanical
Systems Workshop,SanDiego,
California,Feb 1996, p.97
Property
Value
Conditions
Reference
Hardness
13 GPa
Silicon<100>,single crystal,undoped
obtained by nano indentation at a load
of 0.2mN with indentation depth at peak
load 24nm.
J.mater.Res,Vol.12,No.1,Jan1997,
p.59
Hardness
11.9 GPa
Silicon<100>,single
crystal,undoped,values obtained by
nano indentation at a load of 15 mN
with indentation depth at peak load 267
nm.
J.mater.Res,Vol. 12,No.1,Jan1997,
p.59
Hardness
5.1 GPa
Silicon<100>,single
crystal,P+type(boron doped),values
obtained by nano indentation at a load
of 0.2 mN with indentation depth at
peak load 44 nm.
J.mater.Res,Vol.12,No.1,Jan1997,
p.59
Hardness
8.7 GPa
Silicon<100>,single
crystal,P+type(boron doped),values
obtained by nano indentation at a load
of 15 mN with indentation depth at peak
load 318 nm.
J.mater.Res,Vol.12,No.1,Jan1997,
p.59
Hardness(at 100uN)
11.7 GPa
Single crystal,orientation <111>,scan
size=500X500 nm2,using nanotribology
studies(AFM/FFM).
IEEE Micro Electro Mechanical
Systems Workshop,SanDiego,
California, Feb 1996, p.97
Hardness,load-off
36.3 GPa
Si<001> substrate,uncoated,using
nanoindentation method and load
displacement curves for calculation.
Thin Solid Films,246(1994), p.108
Hardness,load-on
7.1 GPa
Si<001> substrate,uncoated,using
nanoindentation method and load
displacement curves for calculation.
Thin Solid Films,246(1994), p.108
Hardness,nanoindentation(at
100uN)
18.6 GPa
C+ implanted Si<111>
IEEE Micro Electro Mechanical
Systems Workshop,SanDiego,
California,Feb 1996, p.97
Hydrogen content
Silicon<111>,crystalline,undoped
polished, obtained by SAW
technique,using the ns Nd:YAG at 355
nm for launching and the probe beam
deflection arrangement for detecting
SAW pulses.
Applied Surface
Science,106(1996), p.433
Poisson's Ratio
0.22
Silicon substrate,isotropic & linearly
thermoelastic.
Mechanics of Materials,23(1996),
p.314
Poisson's Ratio
0.27
Silicon<111>,crystalline,undoped
polished, obtained by SAW
technique,using the ns Nd:YAG at 355
nm for launching and the probe beam
deflection arrangement for detecting
SAW pulses.
Applied Surface
Science,106(1996), p.433
Poisson's Ratio
0.278
Material property used in the finite
element computations of ultra
microhardness indentation of thin
films,both coating and substrate are
assumed to be homogenous and
elastic/plastic.
Thin solid films 290-291(1996),
p.363
Roughness (RMS)
0.08 nm
Undoped,single crystal,measured using
AFM at a scan size of 1 um x 1 um.
J. Mater. Res. Vol. 12 No. 1, Jan
1997, p.60
Roughness(Rms)
0.23 nm
Single crystal
silicon<100>,p+type(boron doped),
value measured using AFM at a scan
size of 1 um x 1 um.
J. Mater. Res., Vol. 12 No. 1, Jan
1997, p.60
Roughness(Rms)
0.11
Single crystal,orientation <111>,scan
size=500X500 nm2,using nanotribology
studies(AFM/FFM).
IEEE Micro Electro Mechanical
Systems Workshop,SanDiego,
California, Feb 1996, p.97
Roughness(Rms)
0.09
Single crystal<110>,scan size=500X500
nm2,using nanotribology
studies(AFM/FFM).
IEEE Micro Electro Mechanical
Systems Workshop,SanDiego,
California,Feb 1996, p.97
Roughness(Rms)
0.12
Single crystal<100>,scan size=500X500
nm2,using nanotribology
studies(AFM/FFM).
IEEE Micro Electro Mechanical
Systems Workshop,SanDiego,
California,Feb 1996, p.97
Roughness(Rms)
0.33
C+ implanted Si<111>
IEEE Micro Electro Mechanical
Systems Workshop,SanDiego,
California,Feb 1996, p.97
Scratch depth(at 40uN)
20 nm
Single crystal,orientation <111>,scan
size=500X500 nm2,using nanotribology
studies(AFM/FFM).
IEEE Micro Electro Mechanical
Systems Workshop,SanDiego,
California, Feb 1996, p.97
Property
Value
Conditions
Reference
Scratch depth,micro(at
40uN)
20 nm
Single crystal<110>,scan size=500X500
nm2,using nanotribology
studies(AFM/FFM).
IEEE Micro Electro Mechanical
Systems Workshop,SanDiego,
California,Feb 1996, p.97
Scratch depth,micro(at
40uN)
25 nm
Single crystal<100>,scan size=500X500
nm2,using nanotribology
studies(AFM/FFM).
IEEE Micro Electro Mechanical
Systems Workshop,SanDiego,
California,Feb 1996, p.97
Scratch depth,micro(at
40uN)
20 nm
C+ implanted Si<111>
IEEE Micro Electro Mechanical
Systems Workshop,SanDiego,
California,Feb 1996, p.97
Specific heat
702.24 J/kg/K
At Temp=25 C.
CRC Materials Science and
Engineering Handbook, p.260
Static frictional force(max)
0.000562 N
Wafer,used as a mover,min voltage to
remove the mover=1176 V, bottom of
the mover is glass plate
IEEE Micro Electro Mechanical
Systems Workshop,Jan-Feb 1991,
Nara,Japan, p.151
Static frictional force(max)
0.001009 N
Wafer,used as a mover,min voltage to
move the mover=1575 V, bottom of the
mover is Silicon substrate,thickness=0.5
mm.
IEEE Micro Electro Mechanical
Systems Workshop,Jan-Feb 1991,
Nara,Japan, p.151
Wear depth(at 40uN)
27 nm
Single crystal,orientation <111>,scan
size=500X500 nm2,using nanotribology
studies(AFM/FFM).
IEEE Micro Electro Mechanical
Systems Workshop,SanDiego,
California, Feb 1996, p.97
Wear depth,micro(at 40uN)
23 nm
C+ implanted Si<111>
IEEE Micro Electro Mechanical
Systems Workshop,SanDiego,
California,Feb 1996, p.97
Young's Modulus
165 GPa
Silicon substrate,isotropic & linearly
thermoelastic.
Mechanics of Materials,23(1996),
p.314
Young's Modulus
179 GPa
Silicon<100>,single crystal,undoped
obtained by nano indentation at a load
of 0.2mN with indentation depth at peak
load 24nm.
J.mater.Res,Vol.12,No.1,Jan1997,
p.59
Young's Modulus
202 GPa
Silicon<100>,single
crystal,undoped,values obtained by
nano indentation at a load of 15 mN
with indentation depth at peak load 267
nm.
J.mater.Res,Vol. 12,No.1,Jan1997,
p.59
Young's Modulus
62 GPa
Silicon<100>,single
crystal,P+type(boron doped),values
obtained by nano indentation at a load
of 0.2 mN with indentation depth at
peak load 44 nm.
J.mater.Res,Vol.12,No.1,Jan1997,
p.59
Young's Modulus
125 GPa
Silicon<100>,single
crystal,P+type(boron doped),values
obtained by nano indentation at a load
of 15 mN with indentation depth at peak
load 318 nm.
J.mater.Res,Vol.12,No.1,Jan1997,
p.59
Young's Modulus
163 ..
188 GPa
Wafer,Si<111>,value obtained by using
micro-indentation test.
Thin Solid Films,283(1996), p.13
Young's Modulus
160 GPa
Silicon<111>,crystalline,undoped
polished, obtained by SAW
technique,using the ns Nd:YAG at 355
nm for launching and the probe beam
deflection arrangement for detecting
SAW pulses.
Applied Surface
Science,106(1996), p.433
Young's Modulus
127 GPa
Material property used in the finite
element computations of ultra
microhardness indentation of thin
films,both coating and substrate are
assumed to be homogeneous and
elastic/plastic.
Thin solid films 290-291(1996),
p.363
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