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RF Transistor Specs for Engineers

This document provides specifications for the BFR360T NPN silicon RF transistor. Key details include: - It is intended for low noise amplifiers and oscillators up to 3.5 GHz with an output power over 10 dBm. - It has a low noise figure of 1.0 dB at 1.8 GHz and DC current gain of 60-200. - Maximum ratings include a collector-emitter voltage of 6V, collector current of 35mA, and power dissipation of 210mW. - Electrical characteristics at 1.8 GHz include a typical power gain of 13.5 dB and third order intercept point of 25 dBm.

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358 views4 pages

RF Transistor Specs for Engineers

This document provides specifications for the BFR360T NPN silicon RF transistor. Key details include: - It is intended for low noise amplifiers and oscillators up to 3.5 GHz with an output power over 10 dBm. - It has a low noise figure of 1.0 dB at 1.8 GHz and DC current gain of 60-200. - Maximum ratings include a collector-emitter voltage of 6V, collector current of 35mA, and power dissipation of 210mW. - Electrical characteristics at 1.8 GHz include a typical power gain of 13.5 dB and third order intercept point of 25 dBm.

Uploaded by

razali1982
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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BFR360T

NPN Silicon RF Transistor

Preliminary data
 Low voltage/ low current operation
 For low noise amplifiers
 For Oscillators up to 3.5 GHz and Pout > 10 dBm

 Low noise figure: 1.0 dB at 1.8 GHz

VPS05996

ESD: Electrostatic discharge sensitive device, observe handling precaution!

Type
BFR360T

Marking
FBs

Pin Configuration
1=B
2=E
3=C

Package
SC75

Maximum Ratings
Parameter

Symbol

Value

Unit

Collector-emitter voltage

VCEO

Collector-emitter voltage

VCES

15

Collector-base voltage

VCBO

15

Emitter-base voltage

VEBO

Collector current

IC

35

Base current

IB

Total power dissipation1)

Ptot

210

mW

Junction temperature

Tj

150

Ambient temperature

TA

-65 ... 150

Storage temperature

Tstg

-65 ... 150

mA

TS  81C

Thermal Resistance
Parameter

Symbol

Value

Unit

Junction - soldering point2)

RthJS

325

K/W

1T is measured on the collector lead at the soldering point to the pcb


S
2For calculation of R
please refer to Application Note Thermal Resistance
thJA

Jan-28-2003

BFR360T
Electrical Characteristics at TA = 25C, unless otherwise specified
Parameter

Symbol

Values

Unit

min.

typ.

max.

V(BR)CEO

ICBO

100

nA

IEBO

hFE

60

100

200

Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
Collector-base cutoff current
VCB = 5 V, IE = 0
Emitter-base cutoff current
VEB = 1 V, IC = 0
DC current gain

IC = 15 mA, VCE = 3 V

Jan-28-2003

BFR360T
Electrical Characteristics at TA = 25C, unless otherwise specified
Parameter
Symbol
Values
min.
typ. max.
AC Characteristics (verified by random sampling)
Transition frequency
fT

10

14

Ccb

0.34

0.5

Cce

0.2

Ceb

0.4

Fmin

13.5

9.5

Unit

GHz

IC = 15 mA, VCE = 3 V, f = 1 GHz


Collector-base capacitance

pF

VCB = 5 V, f = 1 MHz, emitter grounded


Collector emitter capacitance
VCE = 5 V, f = 1 MHz, base grounded
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz, collector grounded
Noise figure

dB

IC = 3 mA, VCE = 3 V, ZS = ZSopt, ZL = ZLopt ,


f = 1.8 GHz
Power gain, maximum available1)

Gma

IC = 15 mA, VCE = 3 V, ZS = ZSopt ,


ZL = ZLopt , f = 1.8 GHz
IC = 15 mA, VCE = 3 V, ZS = ZSopt ,
ZL = ZLopt , f = 3 GHz
|S21e|2

Transducer gain

dB

IC = 15 mA, VCE = 3 V, ZS = ZL = 50 ,


f = 1.8 GHz

12

IC = 15 mA, VCE = 3 V, ZS = ZL = 50 ,


f = 3 GHz

IP3

25

P-1dB

Third order intercept point at output 2)

dBm

VCE = 3 V, IC = 15 mA, f = 1.8 GHz,


ZS = ZL = 50
1dB Compression point at output3)
IC = 15 mA, VCE = 3 V, ZS = ZL = 50 ,
f = 1.8 GHz
1G
1/2
ma = |S21 / S12| (k-(k-1) )
2IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50 from 0.1 MHz to 6 GHz
3DC current at no input power

Jan-28-2003

BFR360T
SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax):
Transitor Chip Data:

IS =
VAF =
NE =
VAR =
NC =
RBM =
CJE =
TF =
ITF =
VJC =
TR =
MJS =
XTI =
AF =

0.0689
20
2.4
60
1.4
7.31
400
9.219
1.336
0.864
1.92
0
0

fA
V

BF =
IKF =
BR =
IKR =
RB =
RE =
VJE =
XTF =
PTF =
MJC =
CJS =
XTB =
FC =
KF =

V
-

fF
ps
mA
V
ns
-

147
77.28
6
0.3
0.1
78.2
1.3
0.115
0
0.486
0
0
0.954
1E-14

mA
A

m
V
deg
fF
-

NF =
ISE =
NR =
ISC =
IRB =
RC =
MJE =
VTF =
CJC =
XCJC =
VJS =
EG =
NK =

1
150
1
20
74
0.35
0.5
0.198
473
0.129
0.75
1.11
0.5

fA
fA
A

L1 =
L2 =
L3 =
C1 =
C2 =
C3 =
C4 =
C5 =
C6 =

0.762
0.706
0.382
62
84
180
7
40
48

nH
nH
nH
fF
fF
fF
fF
fF
fF

V
fF
V
eV
K

All parameters are ready to use, no scalling is necessary.

Package Equivalent Circuit:


C4
C1
L2
B

Transistor
Chip

L3
C

E
C6

C2

L1

C5

C3

Valid up to 6GHz

EHA07524

For examples and ready to use parameters


please contact your local Infineon Technologies
distributor or sales office to obtain a Infineon
Technologies CD-ROM or see Internet:
http//www.infineon.com/silicondiscretes

Jan-28-2003

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