This document provides product specifications for a monolithic N-channel JFET dual. It has tight differential matching and low offset/drift for use in high-speed differential amplifiers and comparators. Key specs include a gate-source cutoff voltage range of -1 to -4.5V and a minimum forward transconductance of 1mS.
This document provides product specifications for a monolithic N-channel JFET dual. It has tight differential matching and low offset/drift for use in high-speed differential amplifiers and comparators. Key specs include a gate-source cutoff voltage range of -1 to -4.5V and a minimum forward transconductance of 1mS.
This document provides product specifications for a monolithic N-channel JFET dual. It has tight differential matching and low offset/drift for use in high-speed differential amplifiers and comparators. Key specs include a gate-source cutoff voltage range of -1 to -4.5V and a minimum forward transconductance of 1mS.
This document provides product specifications for a monolithic N-channel JFET dual. It has tight differential matching and low offset/drift for use in high-speed differential amplifiers and comparators. Key specs include a gate-source cutoff voltage range of -1 to -4.5V and a minimum forward transconductance of 1mS.
D Improved Op Amp Speed, Settling Time Accuracy D Minimum Input Error/Trimming Requirement D Insignificant Signal Loss/Error Voltage D High System Sensitivity D Minimum Error with Large Input Signal
D Wideband Differential Amps
D High-Speed, Temp-Compensated, Single-Ended Input Amps D High Speed Comparators D Impedance Converters
Monolithic Design High Slew Rate Low Offset/Drift Voltage Low Gate Leakage: 5 pA Low Noise: 9 nVHz High CMRR: 100 dB
DESCRIPTION The low cost 2N3958 JFET dual is designed for high-performance differential amplification for a wide range of precision test instrumentation applications. This series features tightly matched specs, low gate leakage for accuracy, and wide dynamic range with IG guaranteed at VDG = 20 V.
The hermetically-sealed TO-71 package is available with full
military processing (see Military Information and the 2N5545/5546/5547JANTX/JANTXV data sheet).
For similar products see 2N5196/5197/5198/5199, the
low-noise U/SST401 series, the high-gain 2N5911/5912, and the low-leakage U421/423 data sheets.
Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentb
IDSS
VGS = 30 V, VDS = 0 V Gate Reverse Current
Gate Operating Current
Gate-Source Voltage Gate-Source Forward Voltage
IGSS
IG
VGS
TA = 150_C VDG = 20 V, ID = 200 mA TA =125_C VDG = 20 V, ID = 200 mA
0.5
4.5
mA
10
100
pA
20
500
nA
50
pA
0.8
250
nA
1.5
ID = 50 mA
VGS(F)
IG = 1 mA, VDS = 0 V
Common-Source Forward Transconductance
gfs
VDS = 20 V, VGS = 0 V f = 1 kHz
Common-Source Output Conductance
gos
Common-Source Input Capacitance
Ciss
4.2
Dynamic
Common-Source Reverse Transfer Capacitance
Crss
VDS = 20 V, VGS = 0 V f = 1 MHz
Drain-Gate Capacitance
Cdg
VDG = 10 V, IS = 0 , f = 1 MHz
Equivalent Input Noise Voltage
en
VDS = 20 V, VGS = 0 V, f = 1 kHz
Noise Figure
NF
VDS = 20 V, VGS = 0 V f = 100 Hz, RG = 10 MW
2.5
mS
35
mS
1.2
pF
1.5 nV Hz
9 0.5
dB
Matching Differential Gate-Source Voltage Gate-Source Voltage Differential Change with Temperature
Saturation Drain Current Ratio
Transconductance Ratio
|V GS1V GS2|
VDG = 20 V, ID = 200 mA
15
25
mV
D|V GS1V GS2|
VDG = 20 V, ID = 200 mA TA = 55 to 125_C
20
100
mV/_C
0.85
0.97
0.85
0.97
DT I DSS1 I DSS2 gfs1 gfs2
Differential Output Conductance
|g os1g os2|
Differential Gate Current
|I G1I G2|
Common Mode Rejection Ratioc
CMRR
VDS = 20 V, VGS = 0 V
VDS = 20 V, ID = 200 mA f = 1 kHz
VDG = 20 V, ID = 200 mA TA = 125_C
0.1
VDG = 10 to 20 V, ID = 200 mA
100
Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. Pulse test: PW v300 ms duty cycle v3%. c. This parameter not registered with JEDEC.
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mS
0.1
10
nA dB NQP
Document Number: 70256
S-04031Rev. B, 04-Jun-01
2N3958 Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Drain Current and Transconductance vs. Gate-Source Cutoff Voltage
Gate Leakage Current
3
2.6
IDSS gfs
2.2
1.8
IDSS @ VDS = 15 V, VGS = 0 V
gfs @ VDG = 15 V, VGS = 0 V f = 1 kHz
1.4
IG @ ID = 200 mA 10 nA TA = 125_C I G Gate Leakage
100 nA gfs Forward Transconductance (mS)
IDSS Saturation Drain Current (mA)
IGSS @ 125_C 100 pA
50 mA
200 mA
50 mA
10 pA
IGSS @ 25_C
TA = 25_C 1 pA
1 0
1 nA
0.1 pA
10
VGS(off) Gate-Source Cutoff Voltage (V)
20
30
40
Output Characteristics
Output Characteristics 5
VGS(off) = 3 V
VGS = 0 V
VGS(off) = 2 V
0.3 V
VGS = 0 V
0.2 V 0.4 V
0.6 V 0.8 V
I D Drain Current (mA)
4 I D Drain Current (mA)
50
VDG Drain-Gate Voltage (V)
1.0 V
0.6 V 3 0.9 V 1.2 V
1.5 V 1.8 V
2.1 V
1.2 V 0 0
12
1.4 V 16
20
VDS Drain-Source Voltage (V)
16
2.4 V 20
VDS Drain-Source Voltage (V)
Output Characteristics
Output Characteristics
2.5 VGS(off) = 2 V
VGS = 0 V
VGS(off) = 3 V
0.4 V 1.2
0.6 V 0.8 V
0.8 1.0 V 1.2 V
0.4
2.0
0.2 V I D Drain Current (mA)
VGS = 0 V
1.6 I D Drain Current (mA)
12
0.3 V 0.6 V 0.9 V
1.5 1.2 V 1.5 V
1.0
1.8 V 0.5
2.1 V
2.4 V
1.4 V 0
1.6 V 0
0.2
0.4
0.6
VDS Drain-Source Voltage (V)
Document Number: 70256
S-04031Rev. B, 04-Jun-01
0.8
0.2
0.4
0.6
0.8
VDS Drain-Source Voltage (V)
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2N3958 Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Gate-Source Differential Voltage vs. Drain Current
Transfer Characteristics 5
100 VGS(off) = 2 V
VDG = 20 V TA = 25_C
VDS = 20 V
(mV)
TA = 55_C
VGS1 VGS2
I D Drain Current (mA)
25_C 2
10
125_C
1 0
0.5
1.0
1.5
2.0
2.5
0.01
0.1
VGS Gate-Source Voltage (V)
ID Drain Current (mA)
Voltage Differential with Temperature
vs. Drain Current
Common Mode Rejection Ratio
vs. Drain Current
100
130 VDG = 20 V
( m V/ _C )
CMRR (dB)
DTA = 25 to 125_C
DTA = 55 to 25_C
Dt
10
110 DVDG = 10 20 V 100 5 10 V
80
1 0.01
0.1
0.01
ID Drain Current (mA)
Circuit Voltage Gain vs. Drain Current
On-Resistance vs. Drain Current
rDS(on) Drain-Source On-Resistance ( )
A V Voltage Gain
VGS(off) = 3 V
40 AV + 20
2 V
g fs R L 1 ) R Lg os
Assume VDD = 15 V, VDS = 5 V
RL +
0 0.01
10 V ID
800
600 VGS(off) = 2 V 400 3 V 200
0 0.1 ID Drain Current (mA)
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1k
80
60
0.1 ID Drain Current (mA)
100
8-4
DVDG D V GS1 VGS2
90
VGS1 VGS2
CMRR = 20 log
120
0.01
0.1
ID Drain Current (mA)
Document Number: 70256 S-04031Rev. B, 04-Jun-01
2N3958 Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Common-Source Input Capacitance vs. Gate-Source Voltage
Common-Source Reverse Feedback
Capacitance vs. Gate-Source Voltage
10
5 C rss Reverse Feedback Capacitance (pF)
C iss Input Capacitance (pF)
f = 1 MHz 8
6 VDS = 0 V 4
5V 15 V
2 20 V
f = 1 MHz 4
VDS = 0 V
5V 2
15 V
1 20 V 0
0 0
12
16
20
VGS Gate-Source Voltage (V)
Equivalent Input Noise Voltage vs. Frequency
VGS(off) = 2 V
16
gos Output Conductance (S)
Hz
16
20
2.5 VDS = 20 V
en Noise Voltage nV /
12
Output Conductance vs. Drain Current
20
ID @ 200 mA 12
VGS = 0 V
0 10
100
1k
10 k
VDS = 20 V f = 1 kHz
2.0 TA = 55_C 1.5
1.0
25_C
0.5
125_C
0 0.01
100 k
0.1
f Frequency (Hz)
ID Drain Current (mA)
Common-Source Forward Transconductance
vs. Drain Current
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage 10
1k VGS(off) = 2 V
VDS = 20 V f = 1 kHz
2.0 TA = 55_C 1.5 25_C 1.0
0.5 125_C
gos
800
600
400
rDS
200 rDS @ ID = 100 mA, VGS = 0 V gos @ VDS = 20 V, VGS = 0 V, f = 1 kHz 0
0 0.01
0.1 ID Drain Current (mA)
Document Number: 70256
S-04031Rev. B, 04-Jun-01
g os Output Conductance ( mS)
rDS(on) Drain-Source On-Resistance ( )
2.5
gfs Forward Transconductance (mS)
VGS Gate-Source Voltage (V)
0 0
VGS(off) Gate-Source Cutoff Voltage (V)
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Legal Disclaimer Notice
Vishay
Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishays terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
