This document summarizes the specifications and characteristics of the Si4404DY n-channel 30V MOSFET from Vishay Siliconix.
The MOSFET has a maximum drain-source voltage of 30V, continuous drain current up to 23A, and on-resistance as low as 0.0065 ohms.
Key features include a trench gate structure, 100% RG testing, and packaging in an SO-8 surface mount package. Electrical parameters such as threshold voltage, on-resistance, gate charge, and thermal characteristics are provided in tables and graphs.
This document summarizes the specifications and characteristics of the Si4404DY n-channel 30V MOSFET from Vishay Siliconix.
The MOSFET has a maximum drain-source voltage of 30V, continuous drain current up to 23A, and on-resistance as low as 0.0065 ohms.
Key features include a trench gate structure, 100% RG testing, and packaging in an SO-8 surface mount package. Electrical parameters such as threshold voltage, on-resistance, gate charge, and thermal characteristics are provided in tables and graphs.
This document summarizes the specifications and characteristics of the Si4404DY n-channel 30V MOSFET from Vishay Siliconix.
The MOSFET has a maximum drain-source voltage of 30V, continuous drain current up to 23A, and on-resistance as low as 0.0065 ohms.
Key features include a trench gate structure, 100% RG testing, and packaging in an SO-8 surface mount package. Electrical parameters such as threshold voltage, on-resistance, gate charge, and thermal characteristics are provided in tables and graphs.
This document summarizes the specifications and characteristics of the Si4404DY n-channel 30V MOSFET from Vishay Siliconix.
The MOSFET has a maximum drain-source voltage of 30V, continuous drain current up to 23A, and on-resistance as low as 0.0065 ohms.
Key features include a trench gate structure, 100% RG testing, and packaging in an SO-8 surface mount package. Electrical parameters such as threshold voltage, on-resistance, gate charge, and thermal characteristics are provided in tables and graphs.
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Si4404DY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY VDS (V) 30
FEATURES ID (A) 23 17
rDS(on) (W) 0.0065 @ VGS = 10 V 0.008 @ VGS = 4.5 V
D TrenchFETr Power MOSFET D 100% Rg Tested
SO-8 S S S G 1 2 3 4 Top View Ordering Information: Si4404DY Si4404DY-T1 (with Tape and Reel) 8 7 6 5 D D D D S N-Channel MOSFET G
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol VDS VGS ID IDM IS PD TJ, Tstg
10 secs 30 "20 23 19 60 2.9 3.5 2.2
Steady State
Unit V
15 12 A
1.3 1.6 1 - 55 to 150 W _C
THERMAL RESISTANCE RATINGS
Parameter M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1 x 1 FR4 Board. Document Number: 71247 S-31873Rev. F, 15-Sep-03 www.vishay.com t v 10 sec Steady State Steady State
Symbol RthJA RthJF
Typical 29 67 13
Maximum 35 80 16
Unit
_C/W
Si4404DY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 23 A VGS = 4.5 V, ID = 17 A VDS = 15 V, ID = 23 A IS = 2.9 A, VGS = 0 V 30 0.0045 0.0068 80 0.8 1.2 0.0065 0.008 1.0 "100 1 5 V nA mA A W S V
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 2.9 A, di/dt = 100 A/ms VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W 1.5 VDS = 15 V, VGS = 4.5 V, ID = 23 A 36 15 12 2.2 20 15 105 40 50 3.7 30 23 160 60 80 ns W 55 nC
Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing.
