AO3407

30V P-Channel MOSFET

General Description Product Summary
V
DS
I
D
(at V
GS
=10V) -4.1A
R
DS(ON)
(at V
GS
=10V) < 52m
R
DS(ON)
(at V
GS
= 4.5V) < 87m
Symbol
V
DS
Drain-Source Voltage -30
The AO3407 uses advanced trench technology to provide
excellent R
DS(ON)
with low gate charge. This device is
suitable for use as a load switch or in PWM applications.
V
Maximum Units Parameter
Absolute Maximum Ratings T
A
=25C unless otherwise noted
-30V
SOT23
Top View Bottom View
D
G
S
G
S
D
G
D
S
DS
V
GS
I
DM
T
J
, T
STG
Symbol
t 10s
Steady-State
Steady-State R
JL
0.9 T
A
=70C
Junction and Storage Temperature Range -55 to 150 C
Thermal Characteristics
Power Dissipation
B
P
D
T
A
=25C
W
Parameter Typ Max
C/W
R
JA
70
100
90
V 20 Gate-Source Voltage
A
I
D
-4.1
-3.5
-25
T
A
=25C
T
A
=70C
Pulsed Drain Current
C
Continuous Drain
Current
1.4
Maximum Junction-to-Lead C/W
C/W Maximum Junction-to-Ambient
A D
63
125
80
Maximum Junction-to-Ambient
A
Units
SOT23
Top View Bottom View
D
G
S
G
S
D
G
D
S
Rev 5: Nov 2011 www.aosmd.com Page 1 of 5

AO3407
Symbol Min Typ Max Units
BV
DSS
-30 V
V
DS
=-30V, V
GS
=0V -1
T
J
=55C -5
I
GSS
100 nA
V
GS(th)
Gate Threshold Voltage -1.4 -1.9 -2.4 V
I
D(ON)
-25 A
34 52
T
J
=125C 52 73
54 87 m
g
FS
10 S
V
SD
-0.7 -1 V
I
S
-2 A
C
iss
520 pF
C
oss
100 pF
C
rss
65 pF
R
g
3.5 7.5 11.5
Q
g
(10V) 9.2 11 nC
Q
g
(4.5V) 4.6 6 nC
Q
gs
1.6 nC
Q
gd
2.2 nC
t
D(on)
7.5 ns
t 5.5 ns
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
Turn-On Rise Time V =-10V, V =-15V,
Total Gate Charge
V
GS
=-10V, V
DS
=-15V, I
D
=-4.1A
Gate Source Charge
Gate Drain Charge
Total Gate Charge
I
S
=-1A,V
GS
=0V
V
DS
=-5V, I
D
=-4.1A
V
GS
=-4.5V, I
D
=-3A
Forward Transconductance
Diode Forward Voltage
Gate resistance V
GS
=0V, V
DS
=0V, f=1MHz
A
V
DS
=V
GS
I
D
=-250A
V
DS
=0V, V
GS
= 20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
m
On state drain current
I
D
=-250A, V
GS
=0V
V
GS
=-10V, V
DS
=-5V
V
GS
=-10V, I
D
=-4.1A
R
DS(ON)
Static Drain-Source On-Resistance
I
DSS
Reverse Transfer Capacitance
V
GS
=0V, V
DS
=-15V, f=1MHz
SWITCHING PARAMETERS
Electrical Characteristics (T
J
=25C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
Drain-Source Breakdown Voltage
t
r
5.5 ns
t
D(off)
19 ns
t
f
7 ns
t
rr 11 ns
Q
rr 5.3
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Charge
I
F
=-4.1A, dI/dt=100A/s
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=-10V, V
DS
=-15V,
R
L
=3.65, R
GEN
=3
Turn-Off Fall Time
I
F
=-4.1A, dI/dt=100A/s
Body Diode Reverse Recovery Time
A. The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The
value in any given application depends on the user's specific board design.
B. The power dissipation P
D
is based on T
J(MAX)
=150C, using 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150C. Ratings are based on low frequency and duty cycles to keep
initialT
J
=25C.
D. The R
JA
is the sum of the thermal impedence from junction to lead R
JL
and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in
2
FR-4 board with
2oz. Copper, assuming a maximum junction temperature of T
J(MAX)
=150C. The SOA curve provides a single pulse rating.
Rev 5: Nov 2011 www.aosmd.com Page 2 of 5

AO3407
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
0
5
10
15
20
25
30
0.5 1.5 2.5 3.5 4.5 5.5
-
I
D
(
A
)
-V
GS
(Volts)
Figure 2: Transfer Characteristics (Note E)
10
20
30
40
50
60
70
80
0 2 4 6 8 10
R
D
S
(
O
N
)
(
m

)
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0.8
1
1.2
1.4
1.6
1.8
0 25 50 75 100 125 150 175
N
o
r
m
a
l
i
z
e
d

O
n
-
R
e
s
i
s
t
a
n
c
e
Temperature (C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
V
GS
=-4.5V
I
D
=-3A
V
GS
=-10V
I
D
=-4.1A
25C
125C
V
DS
=-5V
V
GS
=-4.5V
V
GS
=-10V
0
5
10
15
20
25
30
0 1 2 3 4 5
-
I
D
(
A
)
-V
DS
(Volts)
Fig 1: On-Region Characteristics (Note E)
V
GS
=-3.5V
-4V
-6V
-10V
-4.5V
40
0
5
10
15
20
25
30
0.5 1.5 2.5 3.5 4.5 5.5
-
I
D
(
A
)
-V
GS
(Volts)
Figure 2: Transfer Characteristics (Note E)
10
20
30
40
50
60
70
80
0 2 4 6 8 10
R
D
S
(
O
N
)
(
m

)
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
0.0 0.2 0.4 0.6 0.8 1.0 1.2
-
I
S
(
A
)
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
25C
125C
0.8
1
1.2
1.4
1.6
1.8
0 25 50 75 100 125 150 175
N
o
r
m
a
l
i
z
e
d

O
n
-
R
e
s
i
s
t
a
n
c
e
Temperature (C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
V
GS
=-4.5V
I
D
=-3A
V
GS
=-10V
I
D
=-4.1A
20
40
60
80
100
120
2 4 6 8 10
R
D
S
(
O
N
)
(
m

)
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
25C
125C
V
DS
=-5V
V
GS
=-4.5V
V
GS
=-10V
I
D
=-4.1A
25C
125C
0
5
10
15
20
25
30
0 1 2 3 4 5
-
I
D
(
A
)
-V
DS
(Volts)
Fig 1: On-Region Characteristics (Note E)
V
GS
=-3.5V
-4V
-6V
-10V
-4.5V
Rev 5: Nov 2011 www.aosmd.com Page 3 of 5

AO3407
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
2
4
6
8
10
0 2 4 6 8 10
-
V
G
S
(
V
o
l
t
s
)
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
0
200
400
600
800
0 5 10 15 20 25 30
C
a
p
a
c
i
t
a
n
c
e

(
p
F
)
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
iss
C
oss
C
rss
V
DS
=-15V
I
D
=-4.1A
0
10
20
30
40
0.0001 0.01 1 100
P
o
w
e
r

(
W
)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
T
A
=25C
0.0
0.1
1.0
10.0
100.0
0.01 0.1 1 10 100
I
D
(
A
m
p
s
)
V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10s
10s
1ms
DC
R
DS(ON)
limited
T
J(Max)
=150C
T
A
=25C
100s
10ms 10ms
0
2
4
6
8
10
0 2 4 6 8 10
-
V
G
S
(
V
o
l
t
s
)
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
0
200
400
600
800
0 5 10 15 20 25 30
C
a
p
a
c
i
t
a
n
c
e

(
p
F
)
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
iss
C
oss
C
rss
V
DS
=-15V
I
D
=-4.1A
0
10
20
30
40
0.0001 0.01 1 100
P
o
w
e
r

(
W
)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
T
A
=25C
0.0
0.1
1.0
10.0
100.0
0.01 0.1 1 10 100
I
D
(
A
m
p
s
)
V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10s
10s
1ms
DC
R
DS(ON)
limited
T
J(Max)
=150C
T
A
=25C
100s
10ms 10ms
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Z

J
A
N
o
r
m
a
l
i
z
e
d

T
r
a
n
s
i
e
n
t

T
h
e
r
m
a
l

R
e
s
i
s
t
a
n
c
e
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
JA
.R
JA
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
R
JA
=125C/W
Rev 5: Nov 2011 www.aosmd.com Page 4 of 5

AO3407
VDC
Ig
Vds
DUT
VDC
Vgs
Vgs
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
-
+
-10V
DUT
L
Vgs
Diode Recovery Test Circuit & Waveforms
Vds -
Vds + rr
Q = - Idt
t
rr
-Isd -I
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Resistive Switching Test Circuit & Waveforms
-
+
Vgs
Vds
t t
t
t t
t
90%
10%
r
on
d(off)
f
off
d(on)
VDC
Ig
Vds
DUT
VDC
Vgs
Vgs
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
-
+
-10V
Ig
Vgs
-
+
VDC
DUT
L
Vgs
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
dI/dt
RM
rr
Vdd
Vdd
Q = - Idt
t
rr
-Isd
-Vds
F
-I
-I
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Resistive Switching Test Circuit & Waveforms
-
+
Vgs
Vds
t t
t
t t
t
90%
10%
r
on
d(off)
f
off
d(on)
Rev 5: Nov 2011 www.aosmd.com Page 5 of 5