We fabricate paper-supported semiconducting devices by rubbing a layered molybdenum disulfide (MoS₂) crystal onto a piece of paper, similarly to the action of drawing/writing with a pencil on paper. We show that the abrasion between the MoS₂ crystal and the paper substrate efficiently exfoliates the crystals, breaking the weak van der Waals interlayer bonds and leading to the deposition of a film of interconnected MoS₂ platelets. Employing this simple method, that can be easily extended to other 2D materials, we fabricate MoS₂-on-paper broadband photodectectors with spectral sensitivity from the ultraviolet (UV) to the near-infrared (NIR). We also used these paper-based photodetectors to acquire pictures of objects by mounting the photodetectors in a homebuilt single-pixel camera setup.

This paper presents an 8x8 channel optoelectronic readout array (ORA) realized in a 180-nm CMOS process for the applications of short-range light detection and ranging (LiDAR) sensors. We propose several circuit techniques in this work including an amplitude-to-voltage (A2V) converter that reduces the notorious walk-errors by intensity compensation, and a time-to-voltage (T2V) converter that acquires the linear slope of the output signals by exploiting a charging circuit, thus extending the input dynamic range significantly from 5 uApp to 1.1 mApp, i.e. 46.8 dB. These results correspond to the maximum detection range of 8.2 meters via the action of the A2V converter and the minimum detection range of 56 centimeters with the aid of the proposed T2V converter. Optical measurements utilizing an 850-nm laser diode confirm that the proposed 8 x 8 ORA with 64 on-chip avalanche photodiodes (APDs) can successfully recover the narrow 5-ns light pulses even at the shortest distance of 56 centimeters. Hence, this work provides a potential CMOS solution for low-cost, low-power short-range LiDAR sensors.

The need for miniaturized shear force sensors is expanding, particularly for biomedical applications. Examples include measuring interfacial shear stresses between a human and an external device (e.g., footwear or a prosthesis). However, there are considerable challenges in designing a shear sensor for these applications due to the need for a small package, low power requirements, and resistance to interference from motion artifact and electromagnetic fields. This paper presents the design, fabrication, and characterization sensor that measures two-axis shear force by detecting displacement between a color panel and a red, green, and blue light-sensing photodiode. The sensor response to applied displacements and forces was characterized under benchtop testing conditions. We also present the design of a prototype wireless version of the sensor for integration into footwear. The sensor exhibited strong agreement with gold standard measurements for two axis shear displacements (R2>0.99, RMSE≤5.0 µm) and forces (R2>0.99, RMSE≤0.94 N). This performance, along with the sensor’s scalability, miniaturized form, and low power requirements make it well-suited a variety of biomedical applications.

This study investigates the optical properties of Yttrium Orthoferrite thin films fabricated via plasma laser deposition. Yttrium Orthoferrite, a ferrimagnetic material known for its potential applications in spintronics and photonics, was deposited on single-crystal substrates under controlled conditions to analyze its optical characteristics. The influence of deposition time, on the film quality and optical properties was examined.

In recent decades, considerable attention has been focused on the design and development of surfaces with defined or tunable properties for a wide range of applications and fields. To this end, self-assembled monolayers (SAMs) of organic compounds offer a unique and straightforward route of modifying and engineering the surface properties of any substrate. Thus, alkane-based self-assembled monolayers constitute one of the most extensively studied organic thin-film nanomaterials, which have found wide application in antifouling surfaces, control of wettability or cell adhesion, sensors, optical devices, corrosion protection, organic electronics, among many other applications. Some of which have led technological transfer to industry. Nevertheless, recently, aromatic-based SAMs have gained in importance as functional components, particularly in molecular electronics, bioelectronics, sensors, etc., due to their intrinsic electrical conductivity and optical properties, opening up new perspectives in these fields. However, some key issues affecting device performances still need to be lifted off to ensure their full use and access to novel functionalities such as memories, sensors, or active layers in optoelectronic devices. In this context, we will present herein recent advances of p-conjugated systems-based self-assembled monolayers (e.g., push-pull chromophores) as active layer and their applications.

We report herein the synthesis of siloxane-functionalized CBP molecules (4,4’-bis(carbazole)-1,1′-biphenyl) for liquid optoelectronic applications. The room-temperature liquid state is obtained through a convenient functionalization of the molecules with heptamethyltrisiloxane chains via hydrosilylation of alkenyl spacers. The synthesis comprises screening of metal-catalyzed methodologies to introduce alkenyl linkers into carbazoles (Stille and Suzuki Miyaura cross-couplings), incorporate the alkenylcarbazoles to dihalobiphenyls (Ullmann coupling), and finally introduce the siloxane chains. The used conditions allowed the synthesis of the target compounds, despite the high reactivity of the alkenyl moieties bound to π-conjugated systems toward undesired side reactions such as polymerization, isomerization, and hydrogenation. The features of these solvent-free liquid CBP derivatives make them potentially interesting for fluidic optoelectronic applications.

In this study, we explored the manipulation of optical properties in the terahertz (THz) frequency band of radio-frequency (RF) sputtered indium-tin-oxide (ITO) thin-films on highly resistive silicon substrate by rapid thermal annealing (RTA). The optical constants of as-deposited and RTA-processed ITO films annealed at 400°C, 600°C and 800°C are determined in the frequency range of 0.2 to 1.0 THz. The transmittance can be changed from ~ 27% for as-deposited to ~ 10% and ~ 39% for ITO films heat-treated at different annealing temperatures, T_a’s. Such variations of optical properties in the far infrared for the samples under study are correlated with their mobility and carrier concentration, which are extracted from Drude-Smith modeling of THz conductivity with plasma frequency, scattering time and the c-parameters as fitting parameters. Resistivities of the films are in the range of 10^-3 to 10^-4 W-cm, confirming that annealed ITO films can potentially be used as transparent conducting electrodes for photonic devices operating at THz frequencies. The highest mobility, m = 47 cm²/V∙s, with carrier concentration, N_c = 1.31´10²¹ cm^-3, was observed for ITO films annealed at T_a = 600°C. The scattering times of the samples were in the range of 8 – 21 fs, with c-values of -0.63 to -0.87, indicating strong back scattering of the carriers, mainly by grain boundaries in the polycrystalline film. To better understand the nature of these films, we have also characterized the surface morphology, microscopic structural properties and chemical composition of as-deposited and RTA-processed ITO thin-films. For comparison, we have summarized the optical properties of ITO films sputtered on fused silica substrates, as-deposited and RTA-annealed, in the visible transparency window of 400-800nm. The optical bandgaps of the ITO thin films were evaluated with a Tauc plot from the absorption spectra.