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Search Results (4,414)

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21 pages, 13073 KiB  
Article
Research on the Performance of Thermoelectric Self−Powered Systems for Wireless Sensor Based on Industrial Waste Heat
by Yong Jiang, Yupeng Wang, Junhao Yan, Limei Shen and Jiang Qin
Sensors 2024, 24(18), 5983; https://doi.org/10.3390/s24185983 (registering DOI) - 15 Sep 2024
Viewed by 132
Abstract
The issue of energy supply for wireless sensors is becoming increasingly severe with the advancement of the Fourth Industrial Revolution. Thus, this paper proposed a thermoelectric self−powered wireless sensor that can harvest industrial waste heat for self−powered operations. The results show that this [...] Read more.
The issue of energy supply for wireless sensors is becoming increasingly severe with the advancement of the Fourth Industrial Revolution. Thus, this paper proposed a thermoelectric self−powered wireless sensor that can harvest industrial waste heat for self−powered operations. The results show that this self−powered wireless sensor can operate stably under the data transmission cycle of 39.38 s when the heat source temperature is 70 °C. Only 19.57% of electricity generated by a thermoelectric power generation system (TPGS) is available for use. Before this, the power consumption of this wireless sensor had been accurately measured, which is 326 mW in 0.08 s active mode and 5.45 μW in dormant mode. Then, the verified simulation model was established and used to investigate the generation performance of the TPGS under the Dirichlet, Neumann, and Robin boundary conditions. The minimum demand for a heat source is cleared for various data transmission cycles of wireless sensors. Low−temperature industrial waste heat is enough to drive the wireless sensor with a data transmission cycle of 30 s. Subsequently, the economic benefit of the thermoelectric self−powered system was also analyzed. The cost of one thermoelectric self−powered system is EUR 9.1, only 42% of the high−performance battery cost. Finally, the SEPIC converter model was established to conduct MPPT optimization for the TEG module and the output power can increase by up to approximately 47%. This thermoelectric self−powered wireless sensor can accelerate the process of achieving energy independence for wireless sensors and promote the Fourth Industrial Revolution. Full article
(This article belongs to the Special Issue Energy Harvesting and Self-Powered Sensors)
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<p>The test rig for testing power consumption of the wireless sensor.</p>
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<p>Operating current and voltage of wireless sensor under various data transmission cycles: (<b>a</b>) <span class="html-italic">t<sub>c</sub></span> = 8.66 s; (<b>b</b>) <span class="html-italic">t<sub>c</sub></span> = 25.92 s.</p>
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<p>Average power of wireless sensor under various data transmission cycles.</p>
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<p>The power generation performance test of TEG module: (<b>a</b>) test rig; (<b>b</b>) experimental results.</p>
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<p>The design and production of power management integrated circuit: (<b>a</b>) schematic diagram; (<b>b</b>) practical photo.</p>
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<p>The variation of 1 F capacitor’s voltage.</p>
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<p>Structure of the thermoelectric power generation system.</p>
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<p>The mesh independence verification of the simulation model: (<b>a</b>) geometry parameters of the simulation model; (<b>b</b>) mesh independence verification results.</p>
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<p>The accuracy validation of the simulation model: (<b>a</b>) photo of test rig; (<b>b</b>) comparison of open−circuit voltage results.</p>
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<p>The performance of TPGS under constant temperature heat sources: (<b>a</b>) open−circuit voltage; (<b>b</b>) the minimum heat source temperature for powering wireless sensor.</p>
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<p>The performance of TPGS under constant heat flow heat sources: (<b>a</b>) open−circuit voltage; (<b>b</b>) the minimum heat flow for powering wireless sensor.</p>
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<p>The performance of TPGS under constant heat convection heat sources: (<b>a</b>) open−circuit voltage; (<b>b</b>) the minimum heat source temperature for powering wireless sensor.</p>
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<p>Block diagram of the thermoelectric self−powered sensor.</p>
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<p>The test rig for testing the performance of the thermoelectric self−powered wireless sensor.</p>
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<p>Variation of TEG’s power generation and hot side temperature of copper substrate with time.</p>
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<p>Variation of the 1 F capacitor voltage versus time.</p>
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<p>Energy produced or consumed by each part of the thermoelectric self−powered wireless sensor in a data transmission cycle.</p>
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<p>The circuit diagram of SEPIC converter.</p>
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<p>SEPIC converter simulation model.</p>
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<p>The variation of SEPIC converter’s output power with duty cycle under (<b>a</b>) different temperature differences of TEG, and (<b>b</b>) different external load resistance.</p>
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<p>The impact of MPPT optimization on output power.</p>
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<p>The percentage gain in output power under different conditions.</p>
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9 pages, 1923 KiB  
Proceeding Paper
Power System Transient Stability Analysis Considering Short-Circuit Faults and Renewable Energy Sources
by Amel Brik, Nour El Yakine Kouba and Ahmed Amine Ladjici
Eng. Proc. 2024, 67(1), 42; https://doi.org/10.3390/engproc2024067042 - 13 Sep 2024
Viewed by 72
Abstract
This paper describes a power system transient stability analysis in the presence of renewable energy sources (RESs), including wind farms and solar photovoltaic (PV) generators. The integration impact of RESs on power system time-domain simulation and transient stability were analyzed using the Western [...] Read more.
This paper describes a power system transient stability analysis in the presence of renewable energy sources (RESs), including wind farms and solar photovoltaic (PV) generators. The integration impact of RESs on power system time-domain simulation and transient stability were analyzed using the Western System Coordinating Council (WSCC) IEEE 14 bus system. Through this study, we aimed to analyze the transient stability of an interconnected electrical network by integrating renewable energy for critical clearing time (CCT) enhancement when a short-circuit fault appears. It is important for a power system to remain in a state of equilibrium under normal operating conditions and reach an acceptable state of equilibrium after having been disturbed. With this in mind, the influence of the integration of renewable energy sources such wind turbines and PV generators in an electrical network was envisaged in the case of transient stability. The standard test network IEEE 14 bus was employed for the simulation using the MATLAB software, which is a dedicated tool used for the dynamic analysis and control of electrical networks. Several scenarios that simulated transient stability were reviewed, and an analysis was conducted, including three phases: before, during, and after a three-phase short-circuit fault. Full article
(This article belongs to the Proceedings of The 3rd International Electronic Conference on Processes)
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<p>IEEE 14-bus test network.</p>
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<p>Equivalent diagram of a transient synchronous machine.</p>
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<p>Simplified transformer model.</p>
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<p>Equivalent diagram of a П transmission line model.</p>
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<p>Load model.</p>
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<p>Bus voltage without RESs and faults.</p>
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<p>Bus voltage with a three-phase short-circuit fault.</p>
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<p>Bus voltage with RES integration.</p>
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<p>Bus voltage with RES integration and a three-phase short-circuit fault.</p>
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10 pages, 3134 KiB  
Communication
All-Dielectric Metasurface-Based Terahertz Molecular Fingerprint Sensor for Trace Cinnamoylglycine Detection
by Qiyuan Xu, Mingjun Sun, Weijin Wang and Yanpeng Shi
Biosensors 2024, 14(9), 440; https://doi.org/10.3390/bios14090440 - 13 Sep 2024
Viewed by 231
Abstract
Terahertz (THZ) spectroscopy has emerged as a superior label-free sensing technology in the detection, identification, and quantification of biomolecules in various biological samples. However, the limitations in identification and discrimination sensitivity of current methods impede the wider adoption of this technology. In this [...] Read more.
Terahertz (THZ) spectroscopy has emerged as a superior label-free sensing technology in the detection, identification, and quantification of biomolecules in various biological samples. However, the limitations in identification and discrimination sensitivity of current methods impede the wider adoption of this technology. In this article, a meticulously designed metasurface is proposed for molecular fingerprint enhancement, consisting of a periodic array of lithium tantalate triangular prism tetramers arranged in a square quartz lattice. The physical mechanism is explained by the finite-difference time-domain (FDTD) method. The metasurface achieves a high quality factor (Q-factor) of 231 and demonstrates excellent THz sensing capabilities with a figure of merit (FoM) of 609. By varying the incident angle of the THz wave, the molecular fingerprint signal is strengthened, enabling the highly sensitive detection of trace amounts of analyte. Consequently, cinnamoylglycine can be detected with a sensitivity limit as low as 1.23 μg·cm2. This study offers critical insights into the advanced application of THz waves in biomedicine, particularly for the detection of urinary biomarkers in various diseases, including gestational diabetes mellitus (GDM). Full article
(This article belongs to the Special Issue Photonics for Bioapplications: Sensors and Technology)
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<p>(<b>a</b>) The structural diagram of the all-dielectric metasurface, illustrating the periodic arrangement of the high-index triangular prism tetramer based on the quartz substrate; (<b>b</b>) a unit cell of the periodic structure with a y-polarized source incident downwards in the z direction; (<b>c</b>) the main view of the unit cell (y–z plane) and corresponding parameters.</p>
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<p>(<b>a</b>) Transmission spectra for x-polarized and y-polarized incident waves at 0°; (<b>b</b>) transmission spectra for x-polarized and y-polarized incident waves at 37°; (<b>c</b>) the electric and magnetic field distribution measured at the surface of the quartz substrate at vertical incidence. The left and right figures correspond to the x-polarized and y-polarized incident wave, respectively.</p>
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<p>(<b>a</b>) Transmission spectra at different incident angles without any analyte; (<b>b</b>) the experimentally measured refractive index (n) and extinction coefficient (k) of cinnamoylglycine across the relevant frequency range; (<b>c</b>) transmission spectra at different incident angles with a <math display="inline"><semantics> <mrow> <mn>1</mn> <mo> </mo> <mi mathvariant="sans-serif">μ</mi> <mi mathvariant="normal">m</mi> </mrow> </semantics></math> thick layer of analyte; (<b>d</b>) the electric field distribution measured at the substrate surface in the x–y plane at 0.487 THz for specific incident angles, corresponding to the transmission spectra shown in (<b>c</b>), respectively.</p>
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<p>(<b>a</b>) Comprehensive transmission spectra without any analyte, with the incident angle ranging from 13° to 70°. Specifically, the rightmost line represents the transmission curve for an angle of 13°, while the leftmost line corresponds to 70°; (<b>b</b>) comprehensive transmission spectra with <math display="inline"><semantics> <mrow> <mn>1</mn> <mo> </mo> <mi mathvariant="sans-serif">μ</mi> <mi mathvariant="normal">m</mi> </mrow> </semantics></math> thick cinnamoylglycine, with the incident angle ranging from 13° to 62°. The corresponding envelope curve has been plotted by red line in the figure.</p>
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<p>(<b>a</b>) Transmission envelope curves for analytes of varying thicknesses; (<b>b</b>) the relationship between the thickness of the analyte and the transmission at <math display="inline"><semantics> <mrow> <mn>0.487</mn> <mo> </mo> <mi mathvariant="normal">T</mi> <mi mathvariant="normal">H</mi> <mi mathvariant="normal">z</mi> </mrow> </semantics></math>.</p>
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16 pages, 5021 KiB  
Article
Preparation and Characterization of Amide-Containing Polyimide Films with Enhanced Tribopositivity for Triboelectric Nanogenerators to Harvest Energy at Elevated Temperatures
by Zhen Pan, Shunqi Yuan, Yan Zhang, Xi Ren, Zhibin He, Zhenzhong Wang, Shujun Han, Yuexin Qi, Haifeng Yu and Jingang Liu
Nanoenergy Adv. 2024, 4(3), 284-299; https://doi.org/10.3390/nanoenergyadv4030017 - 12 Sep 2024
Viewed by 205
Abstract
As triboelectric nanogenerator (TENG) technology continue to evolve, its application in harsh environments has increasingly captivated the interest of researchers. However, the current research on heat-resistant triboelectric materials remains predominantly focused on the development of tribo-negative materials, with scant attention given to their [...] Read more.
As triboelectric nanogenerator (TENG) technology continue to evolve, its application in harsh environments has increasingly captivated the interest of researchers. However, the current research on heat-resistant triboelectric materials remains predominantly focused on the development of tribo-negative materials, with scant attention given to their equally crucial tribo-positive counterparts. In this study, the tribo-positive polyimide (PI) material with enhanced tribo-positivity is developed by integrating amide groups with electron-donating effects into the molecular chain. Furthermore, the TENG devices based on this series of tribo-positive PI materials have demonstrated an open-circuit voltage (VOC) of 242 V, a short-circuit current (ISC) of 8.13 μA, and a transferred charge (QSC) of 117 nC. Notably, these devices also demonstrate the capability to efficiently generate electricity even under elevated temperature conditions. This work not only proposes a potential molecular design strategy for developing high-performance tribo-positive PI materials applicable in TENGs, but also markedly propels the advancement of robust energy-harvesting devices engineered for operation at elevated temperatures. Full article
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<p>(<b>a</b>) Synthesis pathway for PI films, (<b>b</b>) the diagram of all PI-based TENGs.</p>
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<p>(<b>a</b>) FTIR spectra of PI films, (<b>b</b>) XRD spectra of PI films, (<b>c</b>) TGA and DTG curves of PI films in nitrogen, (<b>d</b>) DSC curves of the PI films, (<b>e</b>) TMA curves of the PI films, and (<b>f</b>) UV-Vis spectra of the PI films.</p>
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<p>Output performance of the PI-based TENGs: (<b>a</b>) Open-circuit voltage, (<b>b</b>) Short-circuit current, (<b>c</b>) Transferred charge, (<b>d</b>) Open-circuit voltage comparison of different material combinations, (<b>e</b>) Output voltage under different loads, and (<b>f</b>) Instantaneous power density.</p>
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<p>Output performance of TENGs assembled using various tribo-negative materials with PA6 and PI-d as the positive tribo-materials: (<b>a</b>) open-circuit voltage, (<b>b</b>) short-circuit current.</p>
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<p>The short circuit current and variation trend (<b>a</b>,<b>b</b>) under a contact pressure range of 10 N–40 N, (<b>c</b>,<b>d</b>) under a working frequency range of 1 Hz–4 Hz, and (<b>e</b>,<b>f</b>) under a spacer distance range of 5 mm–20 mm.</p>
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<p>(<b>a</b>) Triboelectric series different polymer materials, (<b>b</b>,<b>c</b>) The KPFM measurement of 3D potential maps of PA6 and PI-d, (<b>d</b>) Energy level distribution diagram of the PI films.</p>
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<p>Transferred charge of TENG during 1000 s of continuous operation.</p>
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<p>(<b>a</b>) Schematic of the TENG with rectifier circuit, (<b>b</b>) The capacitor voltage characteristics curves, (<b>c</b>) Schematic diagram of high temperature test setup, (<b>d</b>) Real picture, (<b>e</b>) Open circuit voltage of TENG at different temperatures, (<b>f</b>) The TENG lights up 30 LED bulbs at 200 °C environment.</p>
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14 pages, 2788 KiB  
Review
A Review of Current Differencing Buffered Amplifiers: Performance Metrics and Technological Advances
by Shekhar Suman Borah and Prabha Sundaravadivel
Electronics 2024, 13(18), 3623; https://doi.org/10.3390/electronics13183623 - 12 Sep 2024
Viewed by 248
Abstract
Current Differencing Buffered Amplifiers (CDBAs) are a critical class of analog circuit components capable of handling both current and voltage signals with minimal power consumption. Due to their low impedance voltage output, they play a significant role in modern electronics for developing high-performance, [...] Read more.
Current Differencing Buffered Amplifiers (CDBAs) are a critical class of analog circuit components capable of handling both current and voltage signals with minimal power consumption. Due to their low impedance voltage output, they play a significant role in modern electronics for developing high-performance, high-precision analog and mixed-signal circuits. But, designing and characterizing CDBAs pose several challenges, such as ensuring stability at high frequencies, minimizing noise impact for high-precision applications, and enhancing adaptability. Integrating CDBAs with other analog components to create multifunctional integrated circuits opens many opportunities in the analog signal-processing domain. This paper reviews the evolution and applications of CDBAs in analog signal processing. Various implementation schemes, including those using commercial Current Feedback Amplifiers (CFAs) and novel CMOS configurations, are analyzed for their performance metrics such as supply voltage, power dissipation, input/output impedances, and technology node. Future trends and challenges in advancing CDBA technology towards higher integration and lower-voltage operation are discussed, highlighting potential applications in next-generation electronics. Full article
(This article belongs to the Special Issue Feature Review Papers in Electronics)
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<p>Various applications of CDBA.</p>
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<p>(<b>a</b>) Symbol of CDBA. (<b>b</b>) Equivalent circuit of CDBA.</p>
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<p>Realization of a CDBA using two AD844s [<a href="#B39-electronics-13-03623" class="html-bibr">39</a>].</p>
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<p>Realization of a CDBA using the three AD844 [<a href="#B40-electronics-13-03623" class="html-bibr">40</a>].</p>
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<p>CMOS CDBA based on FVF [<a href="#B42-electronics-13-03623" class="html-bibr">42</a>].</p>
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<p>Low-voltage NMOS CDBA [<a href="#B43-electronics-13-03623" class="html-bibr">43</a>].</p>
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<p>(<b>a</b>) MCDBA block diagram; (<b>b</b>) CMOS structure [<a href="#B44-electronics-13-03623" class="html-bibr">44</a>].</p>
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<p>Class AB CDBA block diagram [<a href="#B45-electronics-13-03623" class="html-bibr">45</a>].</p>
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17 pages, 8334 KiB  
Article
PAIBoard: A Neuromorphic Computing Platform for Hybrid Neural Networks in Robot Dog Application
by Guang Chen, Jian Cao, Chenglong Zou, Shuo Feng, Yi Zhong, Xing Zhang and Yuan Wang
Electronics 2024, 13(18), 3619; https://doi.org/10.3390/electronics13183619 - 12 Sep 2024
Viewed by 282
Abstract
Hybrid neural networks (HNNs), integrating the strengths of artificial neural networks (ANNs) and spiking neural networks (SNNs), provide a promising solution towards generic artificial intelligence. There is a prevailing trend towards designing unified SNN-ANN paradigm neuromorphic computing chips to support HNNs, but developing [...] Read more.
Hybrid neural networks (HNNs), integrating the strengths of artificial neural networks (ANNs) and spiking neural networks (SNNs), provide a promising solution towards generic artificial intelligence. There is a prevailing trend towards designing unified SNN-ANN paradigm neuromorphic computing chips to support HNNs, but developing platforms to advance neuromorphic computing systems is equally essential. This paper presents the PAIBoard platform, which is designed to facilitate the implementation of HNNs. The platform comprises three main components: the upper computer, the communication module, and the neuromorphic computing chip. Both hardware and software performance measurements indicate that our platform achieves low power consumption, high energy efficiency and comparable task accuracy. Furthermore, PAIBoard is applied in a robot dog for tracking and obstacle avoidance system. The tracking module combines data from ultra-wide band (UWB) transceivers and vision, while the obstacle avoidance module utilizes depth information from an RGB-D camera, which further underscores the potential of our platform to tackle challenging tasks in real-world applications. Full article
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<p>(<b>a</b>) ANN neuron; (<b>b</b>) SNN neuron; (<b>c</b>) hybrid neural networks (HNNs).</p>
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<p>(<b>a</b>) Neuromorphic chip; (<b>b</b>) overall architecture of the neuromorphic chip; (<b>c</b>) the neuromorphic chip routing network.</p>
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<p>Neuromorphic computing platform and nervous system.</p>
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<p>The proposed platform PAIBoard system architecture.</p>
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<p>(<b>a</b>) Flowchart of H2C/C2H; (<b>b</b>) workflow of the upper computer.</p>
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<p>Topology diagram of the proposed prototype board.</p>
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<p>(<b>a</b>) 3D printer; (<b>b</b>) acrylic plate; (<b>c</b>) the prototype board; (<b>d</b>) the prototype board with an acrylic plate.</p>
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<p>The architecture of HNN with group convolution for a classification task on CIFAR-10 dataset.</p>
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<p>The pipeline of robot dog tracking and obstacle avoidance system.</p>
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<p>Workflow of robot dog.</p>
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<p>Robot dog containing UWB and the prototype board.</p>
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<p>(<b>a</b>) Three-layer full-connected SNN; (<b>b</b>) network architecture of YOLOv5n.</p>
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<p>Image samples of self-built dataset.</p>
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<p>Results on (<b>a</b>) tracking; (<b>b</b>) obstacle avoidance.</p>
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<p>Tracking and obstacle avoidance system demonstration.</p>
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18 pages, 1025 KiB  
Article
AiMap+: Guiding Technology Mapping for ASICs via Learning Delay Prediction
by Junfeng Liu and Qinghua Zhao
Electronics 2024, 13(18), 3614; https://doi.org/10.3390/electronics13183614 - 11 Sep 2024
Viewed by 321
Abstract
Technology mapping is an essential process in the Electronic Design Automation (EDA) flow which aims to find an optimal implementation of a logic network from a technology library. In application-specific integrated circuit (ASIC) designs, the non-linear delay behaviors of cells in the library [...] Read more.
Technology mapping is an essential process in the Electronic Design Automation (EDA) flow which aims to find an optimal implementation of a logic network from a technology library. In application-specific integrated circuit (ASIC) designs, the non-linear delay behaviors of cells in the library essentially guide the search direction of technology mappers. Existing methods for cell delay estimation, however, rely on approximate simplifications that significantly compromise accuracy, thereby limiting the achievement of better Quality-of-Result (QoR). To address this challenge, we propose formulating cell delay estimation as a regression learning task by incorporating multiple perspective features, such as the structure of logic networks and non-linear cell delays, to guide the mapper search. We design a learning model that incorporates a customized attention mechanism to be aware of the pin delay and jointly learns the hierarchy between the logic network and library through a Neural Tensor Network, with the help of proposed parameterizable strategies to generate learning labels. Experimental results show that (i) our proposed method noticeably improves area by 9.3% and delay by 1.5%, and (ii) improves area by 12.0% for delay-oriented mapping, compared with the well-known mapper. Full article
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<p>An example of an AIG and its mapped circuit with the Boolean function <math display="inline"><semantics> <mrow> <mi>f</mi> <mo>=</mo> <mi>a</mi> <mo>⊕</mo> <mi>b</mi> <mo>∧</mo> <mi>c</mi> <mo>∧</mo> <mi>d</mi> </mrow> </semantics></math>. The dashed lines on the edges indicate the wires with inverters.</p>
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<p>Framework Overview of our proposed AiMap<sup>+</sup>. The red arrow stands for the data flow in the training and testing phases and the green arrow only denotes that in the testing. “Feature Emb.” refers to “Feature Embedder”.</p>
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<p>Train Loss of the regression problem in our AiMap<sup>+</sup>.</p>
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<p>QoR distribution of different circuits under the three training strategies.</p>
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<p>Feature Importance analysis.</p>
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21 pages, 688 KiB  
Article
Research on New Interval-Valued Fractional Integrals with Exponential Kernel and Their Applications
by Abdulrahman F. Aljohani, Ali Althobaiti and Saad Althobaiti
Axioms 2024, 13(9), 616; https://doi.org/10.3390/axioms13090616 - 11 Sep 2024
Viewed by 218
Abstract
This paper aims to introduce a new fractional extension of the interval Hermite–Hadamard (ℋℋ), ℋℋ–Fejér, and Pachpatte-type inequalities for left- and right-interval-valued harmonically convex mappings (ℒRIVH convex mappings) with an exponential function in the kernel. We use fractional operators to develop several [...] Read more.
This paper aims to introduce a new fractional extension of the interval Hermite–Hadamard (ℋℋ), ℋℋ–Fejér, and Pachpatte-type inequalities for left- and right-interval-valued harmonically convex mappings (ℒRIVH convex mappings) with an exponential function in the kernel. We use fractional operators to develop several generalizations, capturing unique outcomes that are currently under investigation, while also introducing a new operator. Generally, we propose two methods that, in conjunction with more generalized fractional integral operators with an exponential function in the kernel, can address certain novel generalizations of increasing mappings under the assumption of ℒRIV convexity, yielding some noteworthy results. The results produced by applying the suggested scheme show that the computational effects are extremely accurate, flexible, efficient, and simple to implement in order to explore the path of upcoming intricate waveform and circuit theory research. Full article
(This article belongs to the Special Issue Theory and Application of Integral Inequalities)
25 pages, 9089 KiB  
Article
Remotely Powered Two-Wire Cooperative Sensors for Bioimpedance Imaging Wearables
by Olivier Chételat, Michaël Rapin, Benjamin Bonnal, André Fivaz, Benjamin Sporrer, James Rosenthal and Josias Wacker
Sensors 2024, 24(18), 5896; https://doi.org/10.3390/s24185896 - 11 Sep 2024
Viewed by 286
Abstract
Bioimpedance imaging aims to generate a 3D map of the resistivity and permittivity of biological tissue from multiple impedance channels measured with electrodes applied to the skin. When the electrodes are distributed around the body (for example, by delineating a cross section of [...] Read more.
Bioimpedance imaging aims to generate a 3D map of the resistivity and permittivity of biological tissue from multiple impedance channels measured with electrodes applied to the skin. When the electrodes are distributed around the body (for example, by delineating a cross section of the chest or a limb), bioimpedance imaging is called electrical impedance tomography (EIT) and results in functional 2D images. Conventional EIT systems rely on individually cabling each electrode to master electronics in a star configuration. This approach works well for rack-mounted equipment; however, the bulkiness of the cabling is unsuitable for a wearable system. Previously presented cooperative sensors solve this cabling problem using active (dry) electrodes connected via a two-wire parallel bus. The bus can be implemented with two unshielded wires or even two conductive textile layers, thus replacing the cumbersome wiring of the conventional star arrangement. Prior research demonstrated cooperative sensors for measuring bioimpedances, successfully realizing a measurement reference signal, sensor synchronization, and data transfer though still relying on individual batteries to power the sensors. Subsequent research using cooperative sensors for biopotential measurements proposed a method to remove batteries from the sensors and have the central unit supply power over the two-wire bus. Building from our previous research, this paper presents the application of this method to the measurement of bioimpedances. Two different approaches are discussed, one using discrete, commercially available components, and the other with an application-specific integrated circuit (ASIC). The initial experimental results reveal that both approaches are feasible, but the ASIC approach offers advantages for medical safety, as well as lower power consumption and a smaller size. Full article
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<p>The conventional approach to measuring a bioimpedance <math display="inline"><semantics> <mrow> <mi>Z</mi> <mfenced separators="|"> <mrow> <mi>t</mi> </mrow> </mfenced> </mrow> </semantics></math>. Two current electrodes (in red) are connected with double-shielded cables to the central unit where a current source <math display="inline"><semantics> <mrow> <msub> <mrow> <mi>i</mi> </mrow> <mrow> <mn>2</mn> </mrow> </msub> </mrow> </semantics></math> injects a current through the skin. The current flows through the impedance to be measured <math display="inline"><semantics> <mrow> <mi>Z</mi> </mrow> </semantics></math> and is drained by another current electrode driven by the current source <math display="inline"><semantics> <mrow> <msub> <mrow> <mi>i</mi> </mrow> <mrow> <mn>1</mn> </mrow> </msub> <mo>=</mo> <mo>−</mo> <msub> <mrow> <mi>i</mi> </mrow> <mrow> <mn>2</mn> </mrow> </msub> <mo>.</mo> </mrow> </semantics></math> Any practical deviation between the two current sources flows through the RL electrode (called the right leg electrode because it was originally developed for ECG and placed on the right leg). The current <math display="inline"><semantics> <mrow> <msub> <mrow> <mi>i</mi> </mrow> <mrow> <mn>2</mn> </mrow> </msub> </mrow> </semantics></math> is translated across the impedance <math display="inline"><semantics> <mrow> <mi>Z</mi> </mrow> </semantics></math> by a voltage drop <math display="inline"><semantics> <mrow> <mi>e</mi> <mo>=</mo> <mi>Z</mi> <msub> <mrow> <mi>i</mi> </mrow> <mrow> <mn>2</mn> </mrow> </msub> </mrow> </semantics></math> measured in the same way as biopotentials (difference <math display="inline"><semantics> <mrow> <msub> <mrow> <mi>v</mi> </mrow> <mrow> <mn>2</mn> </mrow> </msub> <mo>−</mo> <msub> <mrow> <mi>v</mi> </mrow> <mrow> <mn>1</mn> </mrow> </msub> <mo>)</mo> <mo>.</mo> </mrow> </semantics></math> The controller <math display="inline"><semantics> <mrow> <mi>G</mi> </mrow> </semantics></math> driving the voltage source <math display="inline"><semantics> <mrow> <msup> <mi>u</mi> <mo>′</mo> </msup> </mrow> </semantics></math> allows the common ground potential to be set equal to the body potential, thus avoiding possible saturation of the electronics due to disturbing currents picked up in the environment and flowing through the skin/electrode impedance of the RL electrode. When the impedance is measured at a given angular frequency <math display="inline"><semantics> <mrow> <mi>ω</mi> </mrow> </semantics></math>, it can be decomposed into a real part and imaginary part: <math display="inline"><semantics> <mrow> <msub> <mrow> <mi>Z</mi> </mrow> <mrow> <mi>ω</mi> </mrow> </msub> <mfenced separators="|"> <mrow> <mi>t</mi> </mrow> </mfenced> <mo>=</mo> <msub> <mrow> <mi>R</mi> </mrow> <mrow> <mi>ω</mi> </mrow> </msub> <mfenced separators="|"> <mrow> <mi>t</mi> </mrow> </mfenced> <mo>+</mo> <mi>j</mi> <msub> <mrow> <mi>X</mi> </mrow> <mrow> <mi>ω</mi> </mrow> </msub> <mfenced separators="|"> <mrow> <mi>t</mi> </mrow> </mfenced> </mrow> </semantics></math>. Furthermore, the current is a cosine wave <math display="inline"><semantics> <mrow> <msub> <mrow> <mi>i</mi> </mrow> <mrow> <mn>2</mn> </mrow> </msub> <mo>=</mo> <mi>I</mi> <mrow> <mrow> <mi mathvariant="normal">cos</mi> </mrow> <mo>⁡</mo> <mrow> <mi>ω</mi> <mi>t</mi> </mrow> </mrow> </mrow> </semantics></math>, and the resistance <math display="inline"><semantics> <mrow> <msub> <mrow> <mi>R</mi> </mrow> <mrow> <mi>ω</mi> </mrow> </msub> <mfenced separators="|"> <mrow> <mi>t</mi> </mrow> </mfenced> </mrow> </semantics></math> and reactance <math display="inline"><semantics> <mrow> <msub> <mrow> <mi>X</mi> </mrow> <mrow> <mi>ω</mi> </mrow> </msub> <mfenced separators="|"> <mrow> <mi>t</mi> </mrow> </mfenced> </mrow> </semantics></math> are extracted from the voltage <math display="inline"><semantics> <mrow> <mi>e</mi> </mrow> </semantics></math> with IQ demodulation, i.e., multiplication of the voltage <math display="inline"><semantics> <mrow> <mi>e</mi> </mrow> </semantics></math> by <math display="inline"><semantics> <mrow> <mrow> <mrow> <mi mathvariant="normal">cos</mi> </mrow> <mo>⁡</mo> <mrow> <mfenced separators="|"> <mrow> <mi>ω</mi> <mi>t</mi> </mrow> </mfenced> </mrow> </mrow> <mo>/</mo> <mi>I</mi> </mrow> </semantics></math> and by <math display="inline"><semantics> <mrow> <mrow> <mrow> <mi mathvariant="normal">sin</mi> </mrow> <mo>⁡</mo> <mrow> <mfenced separators="|"> <mrow> <mi>ω</mi> <mi>t</mi> </mrow> </mfenced> </mrow> </mrow> <mo>/</mo> <mi>I</mi> </mrow> </semantics></math>, respectively, followed by low-pass filters.</p>
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<p>Cooperative sensors are active electrodes with additional circuitry that enables their connection via a parallel bus with up to two wires. The sensors communicate their measured data to a central unit, which also provides a synchronized clock. In applications not required to be defibrillator proof, the parallel bus can be made from conductive fabric. In this case, the controller <math display="inline"><semantics> <mrow> <mi>G</mi> </mrow> </semantics></math> of the central unit maintains the voltage between the lower textile and the body at nearly 0 V, removing the need for bottom-side insulation. The top conductive textile can easily be insulated with an additional layer of fabric (e.g., a regular garment) if the excess leakage currents are electronically monitored. Highly integrated cooperative sensors can be attached and connected to the fabric, making the assembly seamless while maintaining the usual properties of the fabric (flexibility, stretchability, breathability, and washability). Cooperative sensors can be current electrodes (when the current <math display="inline"><semantics> <mrow> <msub> <mrow> <mi>i</mi> </mrow> <mrow> <mn>1</mn> </mrow> </msub> </mrow> </semantics></math> is different from 0) or potential electrodes (when the current <math display="inline"><semantics> <mrow> <msub> <mrow> <mi>i</mi> </mrow> <mrow> <mn>1</mn> </mrow> </msub> </mrow> </semantics></math> is zero). Symbol legend in <a href="#app1-sensors-24-05896" class="html-app">Appendix A</a>.</p>
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<p>The connection of 16 sensors around a body part (e.g., chest or limb) for EIT measurements. (<b>a</b>) A device with two different types of sensors, one with a potential electrode and one with a current electrode. (<b>b</b>) A device with a single type of sensor with a potential or current electrode depending on the current/function (equal to 0 for potential electrode; different from 0 for current electrode). The symbol legend is in <a href="#app1-sensors-24-05896" class="html-app">Appendix A</a>.</p>
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<p>A simple bootstrap circuit is used to achieve extremely high impedance (input impedance for potential electrode and output impedance for current electrode) by leveraging the floating battery in each sensor. The parts added for the measurement of bioimpedances are shown in red—the other parts are the same as for biopotentials only [<a href="#B1-sensors-24-05896" class="html-bibr">1</a>]. The implementation of the current source (in red) can be simple thanks to the bootstrapping circuit [<a href="#B15-sensors-24-05896" class="html-bibr">15</a>] that significantly increases the open-loop impedance and has a rail-to-rail voltage range. The current return for the red current source comes from the upper wire only. As the lower wire is used for the measurement of potential, the impedance of the wires does not affect the measurement of bioimpedance. Patients are protected from leakage currents by diodes (not depicted) that prevent stored charge from leaving a sensor while simultaneously enabling the recharging of the batteries through the two-wire bus when the system is not being worn. See <a href="#app1-sensors-24-05896" class="html-app">Appendix A</a> for a symbol legend.</p>
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<p>Remotely powered cooperative sensors for bioimpedance measurement with dry electrodes, with digital communication at 1.28 Mb/s in both directions (full duplex) and remote power supply at 500 Hz. Symbol legend in <a href="#app1-sensors-24-05896" class="html-app">Appendix A</a>.</p>
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<p>Remotely powered cooperative sensors for bioimpedance measurement with dry electrodes, with analog communication at 500,000 samples per second and remote supply voltage <math display="inline"><semantics> <mrow> <mi>U</mi> </mrow> </semantics></math> at 1 MHz. Left: schematic overview of central unit circuit; middle: schematic overview of sensor circuit; right: detailed circuit diagram of sensor. Symbol legend is shown in <a href="#app1-sensors-24-05896" class="html-app">Appendix A</a>.</p>
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<p>A supply voltage <math display="inline"><semantics> <mrow> <mi>U</mi> </mrow> </semantics></math> consisting of a 1 MHz square wave with a sync marker (periodicity break) consisting of an HH period with a Manchester edge (in blue) every 1 s (every 1,000,000 periods of the 1 MHz square wave). The other periods contain a powering period H and a communication period L. If the period is HL, the sensors understand it as a 1, whereas LH is understood as 0. This upstream digital communication can be used to configure or control the sensors. The sensors harvest energy during subperiod H, and one of them (determined by the sensor ID and the position of the period with respect to the synch marker, shown in red in the figure) transmits an analog value during subperiod L.</p>
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<p>A possible implementation of the comb filter. The symbol legend is provided in <a href="#app1-sensors-24-05896" class="html-app">Appendix A</a>.</p>
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<p>WELMO vest with embedded EIT chest strap with off-the-shelf components (textile part made by Smartex in framework of EU project WELMO). Left: worn vest, middle top: front view of cooperative sensor with stainless steel dry current/potential electrode and stethoscope (center), middle bottom: back view of cooperative sensor with its two connectors to 2-wire parallel bus, right top: open vest with embedded EIT chest strap with reference and RL textile electrodes ① and cooperative sensors with dry electrode ② and stethoscope ③, right bottom: back view of EIT chest strap showing 2-wire parallel bus and attachment washers.</p>
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<p>A possible implementation of the principles shown in <a href="#sensors-24-05896-f005" class="html-fig">Figure 5</a> (as prototyped in the device shown in <a href="#sensors-24-05896-f009" class="html-fig">Figure 9</a>). Note that the safety protection circuit is not pictured for simplicity. The symbol legend is provided in <a href="#app1-sensors-24-05896" class="html-app">Appendix A</a>.</p>
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<p>Configurations <math display="inline"><semantics> <mrow> <mfenced separators="|"> <mrow> <mn>1</mn> </mrow> </mfenced> </mrow> </semantics></math> and <math display="inline"><semantics> <mrow> <mfenced separators="|"> <mrow> <mn>2</mn> </mrow> </mfenced> </mrow> </semantics></math> ((<b>top</b>) and (<b>bottom</b>)), where the EIT device (left and in black) is connected to two resistors <math display="inline"><semantics> <mrow> <mi>r</mi> </mrow> </semantics></math> (in red) to provide information corresponding to different resistance matrices <math display="inline"><semantics> <mrow> <msup> <mrow> <mi>R</mi> </mrow> <mrow> <mfenced separators="|"> <mrow> <mn>1</mn> </mrow> </mfenced> </mrow> </msup> </mrow> </semantics></math>, <math display="inline"><semantics> <mrow> <msup> <mrow> <mi>R</mi> </mrow> <mrow> <mfenced separators="|"> <mrow> <mn>2</mn> </mrow> </mfenced> </mrow> </msup> </mrow> </semantics></math>, etc. (right), for the optimization function <math display="inline"><semantics> <mrow> <mi>f</mi> </mrow> </semantics></math>, allowing to compute by optimization the calibration function <math display="inline"><semantics> <mrow> <mfenced separators="|"> <mrow> <mi>I</mi> <mo>,</mo> <mi>u</mi> </mrow> </mfenced> <mo>↦</mo> <mfenced separators="|"> <mrow> <mi>i</mi> <mo>,</mo> <mi>U</mi> </mrow> </mfenced> </mrow> </semantics></math>. The symbol legend is shown in <a href="#app1-sensors-24-05896" class="html-app">Appendix A</a>.</p>
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<p>Configurations <math display="inline"><semantics> <mrow> <mfenced separators="|"> <mrow> <mn>1</mn> </mrow> </mfenced> </mrow> </semantics></math> and <math display="inline"><semantics> <mrow> <mfenced separators="|"> <mrow> <mn>2</mn> </mrow> </mfenced> </mrow> </semantics></math> ((<b>top</b>) and (<b>bottom</b>)), where the EIT device (left and in black) is connected to two resistors <math display="inline"><semantics> <mrow> <mi>r</mi> </mrow> </semantics></math> (in red) to provide information corresponding to different resistance matrices <math display="inline"><semantics> <mrow> <msup> <mrow> <mi>R</mi> </mrow> <mrow> <mfenced separators="|"> <mrow> <mn>1</mn> </mrow> </mfenced> </mrow> </msup> </mrow> </semantics></math>, <math display="inline"><semantics> <mrow> <msup> <mrow> <mi>R</mi> </mrow> <mrow> <mfenced separators="|"> <mrow> <mn>2</mn> </mrow> </mfenced> </mrow> </msup> </mrow> </semantics></math>, etc. (right), for the optimization function <math display="inline"><semantics> <mrow> <mi>f</mi> </mrow> </semantics></math>, allowing to compute by optimization the calibration function <math display="inline"><semantics> <mrow> <mfenced separators="|"> <mrow> <mi>I</mi> <mo>,</mo> <mi>u</mi> </mrow> </mfenced> <mo>↦</mo> <mfenced separators="|"> <mrow> <mi>i</mi> <mo>,</mo> <mi>U</mi> </mrow> </mfenced> </mrow> </semantics></math>. The symbol legend is shown in <a href="#app1-sensors-24-05896" class="html-app">Appendix A</a>.</p>
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<p>Errors <math display="inline"><semantics> <mrow> <mi>u</mi> <mo>−</mo> <mi>R</mi> <mi>I</mi> </mrow> </semantics></math> (<b>top</b>) and <math display="inline"><semantics> <mrow> <mi>U</mi> <mo>−</mo> <mi>R</mi> <mi>i</mi> </mrow> </semantics></math>, i.e., after calibration (<b>bottom</b>) for configuration <math display="inline"><semantics> <mrow> <mfenced separators="|"> <mrow> <mn>1</mn> </mrow> </mfenced> </mrow> </semantics></math>. Comparable results are obtained for other configurations <math display="inline"><semantics> <mrow> <mfenced separators="|"> <mrow> <mn>2</mn> </mrow> </mfenced> </mrow> </semantics></math> to <math display="inline"><semantics> <mrow> <mfenced separators="|"> <mrow> <mn>16</mn> </mrow> </mfenced> </mrow> </semantics></math>.</p>
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<p>A block diagram of the ASIC implementation of cooperative sensors for bioimpedance measurements. The circuit blocks that interface with the 2-wire sensor bus are marked in red, and the signal processing circuits are in green. The symbol legend is shown in <a href="#app1-sensors-24-05896" class="html-app">Appendix A</a>.</p>
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<p>A diagram of the central unit based on the approach shown in <a href="#sensors-24-05896-f006" class="html-fig">Figure 6</a>. The symbol legend is shown in <a href="#app1-sensors-24-05896" class="html-app">Appendix A</a>.</p>
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<p>A cut view of the integration of a sensor realized with an ASIC. ① A PCB (green) with a mounted ASIC (black) and finger spring contacts (yellow). ② The bottom part of the housing with an over-molded stainless steel skin electrode ③, with the connection between the PCB and the electrode being obtained with a spring contact (in yellow). ④ The top part of the housing with over-molded wire contacts ⑤ (only one is shown). ⑥ An electrically conductive track on a slightly compressible textile ⑦. ⑧ A clamp pressing the sensor onto the textile. ⑨ A reinforcement ring on belt textile ⑩. The height of the ASIC sensor (without a clamp and without textile) is 4.7 mm. The size of the sensor can be reduced if only the bioimpedance is considered (in our development, we had sensors that also included a stethoscope, not shown in this figure).</p>
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<p>(<b>a</b>) Real setup and (<b>b</b>) functional diagram of setup for first verifications of concept including four sensors, i.e., ASIC (left), central unit (right), and resistance to measure (center).</p>
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<p>The setup used to measure the input impedance of the ASIC frontend amplifier.</p>
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<p>(<b>Top row</b>): the ASIC sensor harness worn (<b>left</b>) and open (<b>right</b>), exposing the sensors and the electrodes on the sensors and two textile electrodes. (<b>Middle row</b>): the ASIC sensor clamped to a 3D knit on two electrically conductive tracks, realized as conductive tapes (black). (<b>Bottom row</b>): the belt textile with the reinforcement ring (seen as a slight bump in the photo) added on top of the conductive tapes.</p>
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<p>Symbol legends used in figures. Electronic symbols in black, functional diagram symbols in blue. A1: resistance, A2: impedance, A3: voltage source, A4: controlled voltage source, A5: voltage (between two conductors), A6: summator, A7: multiplicator, B1: inductance, B2: shielded cable (e.g., coaxial cable), B3: current source, B4: controlled current source, B5: current (in a conductor), B6: transfer function, B7: low-pass filter, C1: capacitance, C2: diode, C3: power supply block, C4: LDO (low-dropout regulator), C5: switch, C6: electrode, C7: pass-through (combination of RL electrode with controller <span class="html-italic">G</span> resulting virtually in a 0 Ω connection with body core), D1: operational amplifier, D2: instrumentation amplifier, D3: power supply including a battery, D4: battery, D5: connection to positive power supply rail, D6: clock recovery and sync block, D7: down sampling by 2, E1: follower, E2: Schmitt trigger, E3: power supply block harvesting energy with controlled current, E5: common ground, E6: modulator, E7: demodulator.</p>
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13 pages, 4067 KiB  
Article
Tiny Security Hole: First-Order Vulnerability of Masked SEED and Its Countermeasure
by Ju-Hwan Kim and Dong-Guk Han
Sensors 2024, 24(18), 5894; https://doi.org/10.3390/s24185894 - 11 Sep 2024
Viewed by 207
Abstract
Side-channel analysis is a type of cryptanalysis that utilizes the physical leakage of a cryptographic device. An adversary exploits the relationship between a physical leakage and the secret intermediate value of an encryption algorithm. In order to prevent side-channel analysis, the masking method [...] Read more.
Side-channel analysis is a type of cryptanalysis that utilizes the physical leakage of a cryptographic device. An adversary exploits the relationship between a physical leakage and the secret intermediate value of an encryption algorithm. In order to prevent side-channel analysis, the masking method was proposed. Several masking methods of the ISO/IEC 18033-3 standard encryption algorithm SEED have been proposed, as the Korean financial IC (integrated circuit) card standard (CFIP.ST.FINIC-01-2021) mandates using a robust implementation of SEED as an encryption algorithm against side-channel analyses. However, vulnerabilities were reported, except for with only one masking method. This study proposes the first-order vulnerability of that masking method. That is, an adversary is able to perform a side-channel analysis with the same complexity as an unprotected implementation. In order to fix this vulnerability, we revise the masking method with negligible additional overhead. Its vulnerability and security are theoretically verified and experimentally demonstrated. The round key of the existing masking method is revealed with only 210 power consumption traces, while that of the proposed masking method is not disclosed with 10,000 traces. Full article
(This article belongs to the Special Issue Security, and Privacy in IoT and 6G Sensor Network)
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Figure 1

Figure 1
<p>Structure of the SEED Feistel function <span class="html-italic">F</span>. A rounded rectangle is an operation, and a sharp rectangle is an intermediate value.</p>
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<p>Masked function <span class="html-italic">G</span> of the existing masking scheme.</p>
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<p>Point-wise T-values and absolute correlation coefficients of the proposed intermediate value over 10,000 traces. The XOR part is the output byte-wise AND and XOR calculations. (Top: power consumption, middle: absolute T-value, bottom: absolute correlation coefficient of the correct key.)</p>
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<p>Absolute correlation coefficients of the correct key and incorrect keys according to the number of traces used.</p>
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<p>Guessed entropy and success rate derived from 10 CPAs.</p>
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<p>Masked function <span class="html-italic">G</span> of the proposed masking scheme.</p>
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<p>Point-wise T-values and absolute correlation coefficients of the proposed intermediate value over 10,000 traces. The XOR part is the output byte-wise AND and XOR calculations. The remask part changes the mask to <math display="inline"><semantics> <msub> <mi>M</mi> <mn>3</mn> </msub> </semantics></math> after XORing the four S-Box outputs. (Top: power consumption, middle: absolute T-value, bottom: absolute correlation coefficient of the correct key.)</p>
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<p>Absolute correlation coefficients of the correct key and incorrect keys according to the number of traces used.</p>
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<p>Guessed entropy and success rate derived from ten CPAs.</p>
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26 pages, 6242 KiB  
Article
Wireless Sensor Node for Chemical Agent Detection
by Zabdiel Brito-Brito, Jesús Salvador Velázquez-González, Fermín Mira, Antonio Román-Villarroel, Xavier Artiga, Satyendra Kumar Mishra, Francisco Vázquez-Gallego, Jung-Mu Kim, Eduardo Fontana, Marcos Tavares de Melo and Ignacio Llamas-Garro
Chemosensors 2024, 12(9), 185; https://doi.org/10.3390/chemosensors12090185 - 11 Sep 2024
Viewed by 275
Abstract
In this manuscript, we present in detail the design and implementation of the hardware and software to produce a standalone wireless sensor node, called SensorQ system, for the detection of a toxic chemical agent. The proposed wireless sensor node prototype is composed of [...] Read more.
In this manuscript, we present in detail the design and implementation of the hardware and software to produce a standalone wireless sensor node, called SensorQ system, for the detection of a toxic chemical agent. The proposed wireless sensor node prototype is composed of a micro-controller unit (MCU), a radio frequency (RF) transceiver, a dual-band antenna, a rechargeable battery, a voltage regulator, and four integrated sensing devices, all of them integrated in a package with final dimensions and weight of 200 × 80 × 60 mm and 0.422 kg, respectively. The proposed SensorQ prototype operates using the Long-Range (LoRa) wireless communication protocol at 2.4 GHz, with a sensor head implemented on a hetero-core fiber optic structure supporting the surface plasmon resonance (SPR) phenomenon with a sensing section (L = 10 mm) coated with titanium/gold/titanium and a chemically sensitive material (zinc oxide) for the detection of Di-Methyl Methyl Phosphonate (DMMP) vapor in the air, a simulant of the toxic nerve agent Sarin. The transmitted spectra with respect to different concentrations of DMMP vapor in the air were recorded, and then the transmitted power for these concentrations was calculated at a wavelength of 750 nm. The experimental results indicate the feasibility of detecting DMMP vapor in air using the proposed optical sensor head, with DMMP concentrations in the air of 10, 150, and 150 ppm in this proof of concept. We expect that the sensor and wireless sensor node presented herein are promising candidates for integration into a wireless sensor network (WSN) for chemical warfare agent (CWA) detection and contaminated site monitoring without exposure of armed forces. Full article
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<p>Hardware architecture of the proposed wireless sensor node.</p>
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<p>Wireless sensor node: (<b>a</b>) 3D model isometric (top/front/left) view, (<b>b</b>) 3D model lateral view, and (<b>c</b>) integrated and packaged wireless sensor node prototype.</p>
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<p>Architecture of the SensorQ system. Showing deployed wireless sensor nodes at the bottom of the figure connected to the communications gateway mounted on UAVs. The communications gateway makes data available to the end user through the MQTT protocol and 4G/5G wireless communications links.</p>
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<p>Wireless sensor node electronics: (<b>a</b>) communications side view and (<b>b</b>) sensors side view. A description of each part according to enclosed numbers is provided in <a href="#chemosensors-12-00185-t003" class="html-table">Table 3</a>.</p>
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<p>Wireless sensor node antenna: (<b>a</b>) top view, showing the stacked dual band antenna setup and (<b>b</b>) bottom view showing interconnections and power divider network.</p>
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<p>Gateway electronics. A description of each part according to enclosed numbers is provided in <a href="#chemosensors-12-00185-t005" class="html-table">Table 5</a>.</p>
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<p>Graphical representation of the proposed sensor probe supporting the SPR effect with stacked material layers deposited on the SMF: longitudinal optical fiber section (left) and optical fiber cross sections (right).</p>
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<p>Representation of data collection by the WSN composed of one gateway and three sensor nodes operating under low-power listening mode.</p>
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<p>Representation of the frame-slotted ALOHA’s (FSA) time organization whilst the gateway is collecting data from each sensor node into a defined sequence of frames (top), slot representation (bottom).</p>
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<p>Wireless sensor node software architecture based on four inter-related layers (L1–L4): L1 is for the Hardware Abstraction Layer, L2 is for the Real-Time Operating System, L3 is for the drivers to access other devices, and L4 is for the Application Layer.</p>
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<p>Wireless software architecture of the gateway based on four inter-related layers (L1–L4): L1 is for the interface with different peripherals, L2 is for the Raspbian operating system of the Raspberry Pi, L3 is for the MQT client, a GNSS receiver, and a Lora radio transceiver driver, and L4 is for the parallel running tasks.</p>
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<p>Screenshot of the configuration dashboard, which allows for the manipulation of several parameters regarding the experiment, the MAC layer, the PHY layer, and the commands sections.</p>
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<p>Deployment of different data collected in the measurements dashboard (screenshot), such as environmental conditions (gas concentration and temperature), the status (RSSI, acceleration, and battery level), and the location (GPS position and altitude) from two sensor node prototypes.</p>
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<p>Average data collection time depending on (<b>a</b>) the number of slots per frame for a given number of sensor nodes (each node sends 1 data packet of 22 bytes), (<b>b</b>) the number of sensor nodes for a given number of slots per frame (each node sends 1 data packet of 22 bytes), and (<b>c</b>) the number of slots per frame for a given number of sensor nodes (each node sends 10 data packets of 22 bytes or 1 data packet of 220 bytes). All results are presented for SF-6. (<b>a</b>) Data collection time over number of slots (single packet of 22 bytes), (<b>b</b>) data collection time over number of sensor nodes (single packet of 22 bytes), and (<b>c</b>) data collection time over number of slots (10 packets of 22 bytes or 1 packet of 220 bytes).</p>
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<p>Sensor head experimental setup based on the optical fiber hetero-core structure coated with Ti/Au/Ti/ZnO.</p>
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<p>Normalized transmitted intensity for different concentrations of DMMP mixed in the air and interaction with our proposed sensing probe (dots: measured data; dashed line: trend).</p>
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13 pages, 4456 KiB  
Article
Preparation of High-Performance Transparent Al2O3 Dielectric Films via Self-Exothermic Reaction Based on Solution Method and Applications
by Xuecong Fang, Honglong Ning, Zihan Zhang, Rihui Yao, Yucheng Huang, Yonglin Yang, Weixin Cheng, Shaojie Jin, Dongxiang Luo and Junbiao Peng
Micromachines 2024, 15(9), 1140; https://doi.org/10.3390/mi15091140 - 11 Sep 2024
Viewed by 340
Abstract
As the competition intensifies in enhancing the integration and performance of integrated circuits, in accordance with the famous Moore’s Law, higher performance and smaller size requirements are imposed on the dielectric layers in electronic devices. Compared to vacuum methods, the production cost of [...] Read more.
As the competition intensifies in enhancing the integration and performance of integrated circuits, in accordance with the famous Moore’s Law, higher performance and smaller size requirements are imposed on the dielectric layers in electronic devices. Compared to vacuum methods, the production cost of preparing dielectric layers via solution methods is lower, and the preparation cycle is shorter. This paper utilizes a low-temperature self-exothermic reaction based on the solution method to prepare high-performance Al2O3 dielectric thin films that are compatible with flexible substrates. In this paper, we first established two non-self-exothermic systems: one with pure aluminum nitrate and one with pure aluminum acetylacetonate. Additionally, we set up one self-exothermic system where aluminum nitrate and aluminum acetylacetonate were mixed in a 1:1 ratio. Tests revealed that the leakage current density and dielectric constant of the self-exothermic system devices were significantly optimized compared to the two non-self-exothermic system devices, indicating that the self-exothermic reaction can effectively improve the quality of the dielectric film. This paper further established two self-exothermic systems with aluminum nitrate and aluminum acetylacetonate mixed in 2:1 and 1:2 ratios, respectively, for comparison. The results indicate that as the proportion of aluminum nitrate increases, the overall dielectric performance of the devices improves. The best overall performance occurs when aluminum nitrate and aluminum acetylacetonate are mixed in a ratio of 2:1: The film surface is smooth without cracks; the surface roughness is 0.747 ± 0.045 nm; the visible light transmittance reaches up to 98%; on the basis of this film, MIM devices were fabricated, with tested leakage current density as low as 1.08 × 10−8 A/cm2 @1 MV and a relative dielectric constant as high as 8.61 ± 0.06, demonstrating excellent electrical performance. Full article
(This article belongs to the Special Issue Thin Film Microelectronic Devices and Circuits)
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<p>MIM device: (<b>a</b>) schematic; (<b>b</b>) photo.</p>
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<p>Surface tension: (<b>a</b>) S1; (<b>b</b>) S2; (<b>c</b>) S3; (<b>d</b>) S4; (<b>e</b>) S5.</p>
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<p>The TG-DSC test curve: (<b>a</b>) S1; (<b>b</b>) S2; (<b>c</b>) S3; (<b>d</b>) S4; (<b>e</b>) S5.</p>
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<p>Comparison of DSC curves for different aluminum salts: (<b>a</b>) DSC curve of Al(NO<sub>3</sub>)<sub>3</sub>·8H<sub>2</sub>O [<a href="#B31-micromachines-15-01140" class="html-bibr">31</a>]; (<b>b</b>) DSC traces of [Al(L)<sub>6</sub>]X<sub>3</sub> (L = DMSO, MIm, or BIm; X = TFSI or TfO) with the pure ligands as references. T<sub>m</sub>, T<sub>tr</sub>, and T<sub>g</sub> denote melting points, solid-solid phase transition temperatures, and glass transition temperatures, respectively [<a href="#B32-micromachines-15-01140" class="html-bibr">32</a>].</p>
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<p>LSCM images of Al<sub>2</sub>O<sub>3</sub> films: (<b>a</b>) S1; (<b>b</b>) S2; (<b>c</b>) S3; (<b>d</b>) S4; (<b>e</b>) S5.</p>
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<p>AFM morphology of Al<sub>2</sub>O<sub>3</sub> films: (<b>a</b>) S1; (<b>b</b>) S2; (<b>c</b>) S3; (<b>d</b>) S4; (<b>e</b>) S5.</p>
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<p>Surface roughness of different samples.</p>
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<p>Al<sub>2</sub>O<sub>3</sub> films: (<b>a</b>) XRR date and fitting curves; (<b>b</b>) thickness and density fitting results.</p>
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<p>UV-Vis spectrum of different Al<sub>2</sub>O<sub>3</sub> films.</p>
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<p>Al<sub>2</sub>O<sub>3</sub> dielectric films: (<b>a</b>) leakage current density curves; (<b>b</b>) summary of leakage current density @1 MV/cm.</p>
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<p>Capacitance density test curves of different samples.</p>
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<p>Summary of relative dielectric constant @1 kHz.</p>
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22 pages, 6177 KiB  
Review
Recent Progresses on Hybrid Lithium Niobate External Cavity Semiconductor Lasers
by Min Wang, Zhiwei Fang, Haisu Zhang, Jintian Lin, Junxia Zhou, Ting Huang, Yiran Zhu, Chuntao Li, Shupeng Yu, Botao Fu, Lingling Qiao and Ya Cheng
Materials 2024, 17(18), 4453; https://doi.org/10.3390/ma17184453 - 11 Sep 2024
Viewed by 415
Abstract
Thin film lithium niobate (TFLN) has become a promising material platform for large scale photonic integrated circuits (PICs). As an indispensable component in PICs, on-chip electrically tunable narrow-linewidth lasers have attracted widespread attention in recent years due to their significant applications in high-speed [...] Read more.
Thin film lithium niobate (TFLN) has become a promising material platform for large scale photonic integrated circuits (PICs). As an indispensable component in PICs, on-chip electrically tunable narrow-linewidth lasers have attracted widespread attention in recent years due to their significant applications in high-speed optical communication, coherent detection, precision metrology, laser cooling, coherent transmission systems, light detection and ranging (LiDAR). However, research on electrically driven, high-power, and narrow-linewidth laser sources on TFLN platforms is still in its infancy. This review summarizes the recent progress on the narrow-linewidth compact laser sources boosted by hybrid TFLN/III-V semiconductor integration techniques, which will offer an alternative solution for on-chip high performance lasers for the future TFLN PIC industry and cutting-edge sciences. The review begins with a brief introduction of the current status of compact external cavity semiconductor lasers (ECSLs) and recently developed TFLN photonics. The following section presents various ECSLs based on TFLN photonic chips with different photonic structures to construct external cavity for on-chip optical feedback. Some conclusions and future perspectives are provided. Full article
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<p>High Q thin film lithium niobate (TFLN) microring side-coupled with a ridge waveguide fabricated by PLACE technique [<a href="#B107-materials-17-04453" class="html-bibr">107</a>]. (<b>a</b>) Optical microscope image of the photonic structure. (<b>b</b>) The scanning electron microscope (SEM) image of the coupling region between the microring resonator and the straight waveguide, which is shown by the blue dotted line box in (<b>a</b>). (<b>c</b>) The SEM image of the cross section of the strip waveguide. (<b>d</b>) Transmission spectra after annealing. The red Lorentz fitting curve indicates a loaded Q factor of 4.29 × 10<sup>6</sup>. Reprinted with permission from [<a href="#B107-materials-17-04453" class="html-bibr">107</a>] © Optical Society of America.</p>
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<p>Compact hybrid Er<sup>3+</sup>-doped lithium niobate microring laser [<a href="#B111-materials-17-04453" class="html-bibr">111</a>]. (<b>a</b>) Picture of the device. Upper right inset: Illustration of the device. Bottom right inset: the Er<sup>3+</sup>-doped lithium niobate microring captured by optical microscope. (<b>b</b>) The lasing spectrum collected from the bus waveguide. (<b>c</b>) The on-chip lasing power of the microring laser as a function of the increasing input pump power. (<b>d</b>) The on-chip lasing power of the microring laser as a function of the increasing driving electric power. Reprinted with permission from [<a href="#B111-materials-17-04453" class="html-bibr">111</a>] © Optical Society of America.</p>
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<p>Compact hybrid self-injection-locked lithium niobate microring laser [<a href="#B112-materials-17-04453" class="html-bibr">112</a>]. (<b>a</b>) Illustration of the narrow-linewidth laser. (<b>b</b>) Comparison of the laser linewidth for the free-running DFB laser (blue curve) and the self-injection-locked microlaser (red curve). The green and orange curve are the Lorentz fitting lines of the double lasing peak of the free-running DFB laser. (<b>c</b>) The lasing wavelength drifts with the increasing electrical pumping power.</p>
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<p>Characterization of the monolithically integrated high-power III-V/TFLN laser [<a href="#B87-materials-17-04453" class="html-bibr">87</a>]: (<b>a</b>) The microscope image of a DFB laser flip-chip bonded with a TFLN chip, which includes multiple waveguides that are coupled to microring resonators. (<b>b</b>) The light–current–voltage (LIV) measurement of the device. The inset: the lasing spectrum of the device. Reprinted with permission from [<a href="#B87-materials-17-04453" class="html-bibr">87</a>] © Optical Society of America.</p>
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<p>Low-noise III-V/TFLN self-injection-locked laser using LN racetrack external cavity [<a href="#B113-materials-17-04453" class="html-bibr">113</a>,<a href="#B114-materials-17-04453" class="html-bibr">114</a>]. (<b>a</b>) Schematic of III-V/TFLN butt-coupling laser [<a href="#B113-materials-17-04453" class="html-bibr">113</a>]. (<b>b</b>) Optical emission spectrum of the device. (<b>c</b>) The frequency noise spectra of the hybrid laser (red) and the free-running DFB laser diode (green). (<b>d</b>) The lasing frequency of the self-injection-locked hybrid laser versus the diode current. The mode locked area is marked by the white dashed lines, which indicate a locking range of about 2.5 GHz. (<b>e</b>) Schematic of the III-V/TFLN hybrid frequency conversion laser [<a href="#B114-materials-17-04453" class="html-bibr">114</a>]. The periodically poled lithium niobate (PPLN) racetrack resonator provides not only the backscattering portion of the lightwaves for the self-injection locking but also the quasi-phase matching for the second-harmonic generation (SHG) process. (<b>f</b>) Optical microscope image of the lithium niobate photonic integrated chip with a PPLN racetrack resonator and the uniform period poling structure captured by a confocal microscope. (<b>g</b>) The picture of the frequency conversion laser system. (<b>h</b>) The frequency noise spectra of the free-running DFB laser (gray), self-injection locking pump light (blue), and self-injection locking SH signal (red), respectively.</p>
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<p>Electro-optically tunable narrow-linewidth laser based on TFLN loop mirror [<a href="#B118-materials-17-04453" class="html-bibr">118</a>]. (<b>a</b>) Schematic view of the device. (<b>b</b>) The microscope image of the butt-coupling area between the TFLN and SOA chip. (<b>c</b>) The top view image of the TFLN chip captured by the optical microscope. (<b>d</b>) The emission spectrum of the microlaser. It operates under the single mode with a maximum output power of 738.8 μW. Inset: The optical field distribution of the laser output captured by the infrared camera. (<b>e</b>) The laser linewidth is measured to be 45.55 kHz. (<b>f</b>) The lasing peak shifts along with the increasing applied voltages. Reprinted from [<a href="#B118-materials-17-04453" class="html-bibr">118</a>] with permission from AAAS.</p>
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<p>Integrated TFLN ultrafast mode-locked laser (MLL) [<a href="#B86-materials-17-04453" class="html-bibr">86</a>]. The schematic (<b>a</b>) and the top view image taken by the microscope (<b>b</b>) of the hybrid MLL. (<b>c</b>) The device operates in mode locked condition when the applied radio frequency (RF) is from 10.165 GHz to 10.173 GHz. (<b>d</b>) The Gaussian fitting curve of the intensity autocorrelation data of the MLL output shows the generation of an ultrafast pulse with a pulse width of 4.81 ps and a repetition rate of 10.17 GHz.</p>
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<p>Integrated TFLN distributed Bragg reflector (DBR) based tunable ECSL device [<a href="#B119-materials-17-04453" class="html-bibr">119</a>]. (<b>a</b>) The schematic of the tunable ECSL device. Insets: the optical images or the SEM image of the device. (<b>b</b>) The LI curve of the laser. Inset: the lasing spectrum obtained by an optical signal analyzer showing that the laser operates in the single mode. (<b>c</b>) The frequency noise is measured by analyzing the phase noise captured by a real-time oscilloscope. A white noise floor of ~1.5 × 10<sup>4</sup> Hz<sup>2</sup>/Hz is marked by the red dashed line, indicating an intrinsic linewidth of 94 kHz.</p>
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<p>Active/passive integrated TFLN FP cavity laser [<a href="#B121-materials-17-04453" class="html-bibr">121</a>]. (<b>a</b>) The top view microscope image of the TFLN chip. Inset: The low loss interface of the active and passive TFLN waveguides marked by the yellow square. (<b>b</b>) The schematic of the experiment for characterizing the lasing behavior of the device. Inset: the schematic of the Er<sup>3+</sup> ion energy level and the stimulated emission triggered by the 1480 nm pump light. (<b>c</b>) The emission spectra of the device at different pumping powers. (<b>d</b>) The on-chip power of the FP laser along with the increasing pump power. (<b>e</b>) A laser linewidth of 33.6 kHz is measured via the linewidth of the beating signal collected from the delayed self-heterodyne interferometer. (<b>f</b>) The laser spectrum features multi-mode peaks at a pumping power of 34 mW. Reprinted from [<a href="#B121-materials-17-04453" class="html-bibr">121</a>] with permission from Elsevier.</p>
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<p>Hybrid O-band TFLN/III-V integrated tunable microlaser [<a href="#B122-materials-17-04453" class="html-bibr">122</a>]. (<b>a</b>) Schematic of the laser. (<b>b</b>) Optical microscope image of the integrated TFLN chip. (<b>c</b>) Continuous-wave L–I curve of the microlaser. (<b>d</b>) The emission spectrum when the injection current is set to be 200 mA. Reprinted with permission from [<a href="#B122-materials-17-04453" class="html-bibr">122</a>] © Optical Society of America.</p>
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<p>Tunable integrated Pockels laser based on the a TFLN photonic chip [<a href="#B125-materials-17-04453" class="html-bibr">125</a>]. (<b>a</b>) Schematic of the device. (<b>b</b>) Optical microscope image of the integrated device. (<b>c</b>) Beating signal of laser recorded from a sub-coherence delayed self-heterodyne measurement. (<b>d</b>) The output lasing frequency modulation rate versus the EO modulation speed. (<b>e</b>) Optical spectra of the laser with two lasing wavelengths. Top inset: the spectrum of the fundamental frequency lasing. Bottom inset: the spectrum of the SHG lasing.</p>
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<p>The evolution timeline of the integration density and configuration of the hybrid TFLN ECSL [<a href="#B86-materials-17-04453" class="html-bibr">86</a>,<a href="#B87-materials-17-04453" class="html-bibr">87</a>,<a href="#B111-materials-17-04453" class="html-bibr">111</a>,<a href="#B112-materials-17-04453" class="html-bibr">112</a>,<a href="#B113-materials-17-04453" class="html-bibr">113</a>,<a href="#B114-materials-17-04453" class="html-bibr">114</a>,<a href="#B115-materials-17-04453" class="html-bibr">115</a>,<a href="#B118-materials-17-04453" class="html-bibr">118</a>,<a href="#B119-materials-17-04453" class="html-bibr">119</a>,<a href="#B122-materials-17-04453" class="html-bibr">122</a>,<a href="#B124-materials-17-04453" class="html-bibr">124</a>,<a href="#B125-materials-17-04453" class="html-bibr">125</a>].</p>
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9 pages, 3733 KiB  
Article
Improvement of DC Performance and RF Characteristics in GaN-Based HEMTs Using SiNx Stress-Engineering Technique
by Chenkai Deng, Peiran Wang, Chuying Tang, Qiaoyu Hu, Fangzhou Du, Yang Jiang, Yi Zhang, Mujun Li, Zilong Xiong, Xiaohui Wang, Kangyao Wen, Wenmao Li, Nick Tao, Qing Wang and Hongyu Yu
Nanomaterials 2024, 14(18), 1471; https://doi.org/10.3390/nano14181471 - 10 Sep 2024
Viewed by 336
Abstract
In this work, the DC performance and RF characteristics of GaN-based high-electron-mobility transistors (HEMTs) using the SiNx stress-engineered technique were systematically investigated. It was observed that a significant reduction in the peak electric field and an increase in the effective barrier thickness [...] Read more.
In this work, the DC performance and RF characteristics of GaN-based high-electron-mobility transistors (HEMTs) using the SiNx stress-engineered technique were systematically investigated. It was observed that a significant reduction in the peak electric field and an increase in the effective barrier thickness in the devices with compressive SiNx passivation contributed to the suppression of Fowler–Nordheim (FN) tunneling. As a result, the gate leakage decreased by more than an order of magnitude, and the breakdown voltage (BV) increased from 44 V to 84 V. Moreover, benefiting from enhanced gate control capability, the devices with compressive stress SiNx passivation showed improved peak transconductance from 315 mS/mm to 366 mS/mm, along with a higher cutoff frequency (ft) and maximum oscillation frequency (fmax) of 21.15 GHz and 35.66 GHz, respectively. Due to its enhanced frequency performance and improved pinch-off characteristics, the power performance of the devices with compressive stress SiNx passivation was markedly superior to that of the devices with stress-free SiNx passivation. These results confirm the substantial potential of the SiNx stress-engineered technique for high-frequency and high-output power applications, which are crucial for future communication systems. Full article
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<p>(<b>a</b>) Schematic diagram and (<b>b</b>) process flow of AlGaN/GaN-on-Si HEMTs with stress-free SiN<sub>x</sub> passivation and compressive stress SiN<sub>x</sub> passivation.</p>
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<p>(<b>a</b>) SEM images of overall device. TEM images of (<b>b</b>) gate metal stack (<b>c</b>,<b>d</b>) PECVD dual-layer SiN<sub>x</sub>, composed of a 10.5 nm SiN<sub>x</sub> protection layer and a 180.3 nm SiN<sub>x</sub> stress layer.</p>
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<p>Schematics for the nitrogen ions responding to different plasma excitation frequencies in PECVD.</p>
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<p>Intrinsic stress of PECVD SiN<sub>x</sub> can be modulated by adjusting the duty cycle of the low-frequency (LF) plasma excitation.</p>
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<p>(<b>a</b>) The transfer characteristics when <span class="html-italic">V</span><sub>ds</sub> = 6 V of devices with stress-free SiN<sub>x</sub> passivation and compressive stress SiN<sub>x</sub> passivation. (<b>b</b>) The <span class="html-italic">I</span><sub>d</sub>/<span class="html-italic">V</span><sub>d</sub> curve when <span class="html-italic">V</span><sub>g</sub> = −8 V of the device with stress-free SiNx passivation and compressive stress SiN<sub>x</sub> passivation.</p>
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<p>The electric field distribution near the gate–drain side of devices with (<b>a</b>) stress-free SiN<sub>x</sub> passivation and (<b>b</b>) compressive stress SiN<sub>x</sub> passivation. (<b>c</b>) The electric field value comparison near the gate–drain, and (<b>d</b>) conduction band diagram when <span class="html-italic">V</span><sub>g</sub> = −8 V of the devices with stress-free SiN<sub>x</sub> passivation and compressive stress SiN<sub>x</sub> passivation.</p>
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<p>(<b>a</b>) The transconductance curves, (<b>b</b>) the output characteristics when override voltage (<span class="html-italic">V</span><sub>od</sub>) = −1 to 5 V, (<b>c</b>) the conduction band energy of AlGaN beneath the gate, and (<b>d</b>) 2DEG concentration distribution of the devices with stress-free SiN<sub>x</sub> passivation and compressive stress SiN<sub>x</sub> passivation.</p>
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<p>Small-signal performance biased at <span class="html-italic">V</span><sub>ds</sub> = 6 V and their respective <span class="html-italic">V</span><sub>g</sub> for the <span class="html-italic">g</span><sub>m,max</sub> of the devices (<b>a</b>) with stress-free SiN<sub>x</sub> passivation and (<b>b</b>) compressive stress SiN<sub>x</sub> passivation.</p>
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<p>CW power performance at bias of <span class="html-italic">V</span><sub>ds</sub> = 10 V of GaN HEMTs (<b>a</b>) with stress-free SiN<sub>x</sub> passivation and (<b>b</b>) compressive stress SiN<sub>x</sub> passivation. Measured output power density, PAE, and associated gain versus drain bias at 5.2 GHz of GaN HEMTs (<b>c</b>) with stress-free SiN<sub>x</sub> passivation and (<b>d</b>) compressive stress SiN<sub>x</sub> passivation.</p>
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15 pages, 4061 KiB  
Article
Thermal Interaction and Cooling of Electronic Device with Chiplet 2.5D Integration
by Jianyu Feng, Minghao Zhou, Chuan Chen, Qidong Wang and Liqiang Cao
Appl. Sci. 2024, 14(18), 8114; https://doi.org/10.3390/app14188114 - 10 Sep 2024
Viewed by 263
Abstract
With the development of artificial intelligence (AI) and high-performance computing (HPC), the microelectronic industry is challenged with increased device integration density. Chiplet architecture can break through a variety of limitations on the system-on-chip (SoC) to create a high-computility system. However, chiplet heterogeneous integration [...] Read more.
With the development of artificial intelligence (AI) and high-performance computing (HPC), the microelectronic industry is challenged with increased device integration density. Chiplet architecture can break through a variety of limitations on the system-on-chip (SoC) to create a high-computility system. However, chiplet heterogeneous integration suffers from high heat flux and serious thermal interaction problems. The factors affecting thermal interaction are not clear. In this paper, a collective parameter model and a distribution parameter model are developed to clarify the optimization method to mitigate thermal interaction. The trends predicted by the parameter model are consistent with the finite element method (FEM) simulation results. Furthermore, to cool the chiplets, a thermal test vehicle is designed and fabricated, and the cooling performance of the test vehicle with different flow rates, different TIMs (Thermal Interfacial Materials) (DOW5888 vs. liquid metal), and different heat modes is experimentally investigated. Compared with DOW5888, the utilization of liquid metal TIM can mitigate thermal interaction by 56% and 76% at flow rates of 0.2 L/min and 0.8 L/min, respectively. Consequently, at a temperature rise of 60 °C and a flow rate of 0.8 L/min, using liquid metal TIM can achieve heat fluxes of 330 W/cm2 and 520 W/cm2 for two chiplets, respectively. Full article
(This article belongs to the Topic Applied Heat Transfer)
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<p>Schematic of near-chip cooling for chiplet 2.5D integration.</p>
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<p>Collective parameter model.</p>
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<p>Two-node distribution parameter model.</p>
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<p>(<b>a</b>) Chiplet 2.5D integration simulation model. (<b>b</b>) Exploded view.</p>
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<p>Temperature distribution of the model with 0.1 mm chiplet spacing.</p>
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<p>Relationship between chiplet temperature rise and different chiplet spacing.</p>
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<p>Relationship between chiplet temperature rise and different TIMs.</p>
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<p>Relationship between chiplet temperature rise and different interposers.</p>
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<p>Relationship between chiplet temperature rise and different chiplet thicknesses.</p>
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<p>Relationship between chiplet temperature rise and different convective heat transfer coefficients.</p>
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<p>(<b>a</b>) TTC. (<b>b</b>) The schematic of chiplet 2.5D integration. (<b>c</b>) Heat sink and chiplet 2.5D integration. (<b>d</b>) Near-chip cooling test vehicle.</p>
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<p>Resistance–temperature curves for Pt temperature measuring resistors. (<b>a</b>) Chiplet1. (<b>b</b>) Chiplet2.</p>
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<p>Temperature rise of chiplets in different heat modes. (<b>a</b>) When TIM is DOW5888, heat mode 1. (<b>b</b>) When TIM is liquid metal, heat mode 1. (<b>c</b>) Heat mode 2.</p>
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<p>Temperature rise of chiplets in different heat modes. (<b>a</b>) When TIM is DOW5888, heat mode 1. (<b>b</b>) When TIM is liquid metal, heat mode 1. (<b>c</b>) Heat mode 2.</p>
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