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Design of Nanomaterials by Computer Simulation and Artificial Intelligence Approaches (2nd Edition)

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Theory and Simulation of Nanostructures".

Deadline for manuscript submissions: 20 March 2025 | Viewed by 1280

Special Issue Editor


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Guest Editor
Department of Mechanical Engineering, Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong
Interests: computational materials science; functional nanomaterials; materials informatics
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

This Special Issue is a continuation of the previous successful Special Issue, entitled “Design of Nanomaterials by Computer Simulation and Artificial Intelligence Approaches”, hosted by the same editor.

In the past century, the process of design and development of new materials underwent discovery, optimization, system design, and manufacturing, lasting 10–20 years or more. Materials informatics, which is based on statistical algorithms, machine learning, and artificial intelligence (AI) approaches, has become the fourth paradigm in materials design and development. It could accelerate the process and shorten the development cycle by 2–5 times.

We are pleased to invite you to contribute to this Special Issue on the design of nanomaterials by computer simulation and artificial intelligence approaches, which focuses on tackling the discovery, optimization, and synthesis of nanomaterials with unique or improved properties compared to their bulk counterparts.

This Special Issue aims to provide a platform for the publication of research work related to the design and development of nano-sized materials (nanoparticles, nanowires, two-dimensional materials, thin films, nanocomposites, and nanostructured materials) using integrated computer simulation methods (ab initio simulation, molecular dynamics, Monte Carlo method, and high-throughput simulation) or/and AI incorporating other methods such as high-throughput experiments. These nano-sized materials include superconductors; piezoelectric, thermoelectric, and multiferroic materials; photovoltaic materials; catalysts; materials for electrochemical energy storage; and advanced structural materials.

Original research articles and reviews are welcome. Research areas may include, but are not limited to, the following:

  • Computer simulation on the complexity (in phase, chemical composition, and thermodynamics) of surfaces, interfaces, or grain boundaries of nanomaterials;
  • Prediction of novel physical and chemical properties of nanomaterials by ab initio simulation;
  • (Big) data-driven prediction of novel nanomaterials;
  • High-throughput simulation studies on microstructure–property relationships in nanostructured materials;
  • Studies on the physical and chemical properties of nanomaterials that use machine learning or deep learning methods.

We look forward to receiving your contributions.

Dr. Guang-Ping Zheng
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Nanomaterials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2900 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • Ab initio simulation
  • high-throughput simulation and algorithm
  • phase-field simulation
  • data-driven prediction on materials
  • machine learning for inter-atomic potentials
  • machine learning and deep learning methods
  • nanostructured materials

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Published Papers (1 paper)

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Review

20 pages, 3827 KiB  
Review
Two-Dimensional Ferroelectric Materials: From Prediction to Applications
by Shujuan Jiang, Yongwei Wang and Guangping Zheng
Nanomaterials 2025, 15(2), 109; https://doi.org/10.3390/nano15020109 - 12 Jan 2025
Viewed by 908
Abstract
Ferroelectric materials hold immense potential for diverse applications in sensors, actuators, memory storage, and microelectronics. The discovery of two-dimensional (2D) ferroelectrics, particularly ultrathin compounds with stable crystal structure and room-temperature ferroelectricity, has led to significant advancements in the field. However, challenges such as [...] Read more.
Ferroelectric materials hold immense potential for diverse applications in sensors, actuators, memory storage, and microelectronics. The discovery of two-dimensional (2D) ferroelectrics, particularly ultrathin compounds with stable crystal structure and room-temperature ferroelectricity, has led to significant advancements in the field. However, challenges such as depolarization effects, low Curie temperature, and high energy barriers for polarization reversal remain in the development of 2D ferroelectrics with high performance. In this review, recent progress in the discovery and design of 2D ferroelectric materials is discussed, focusing on their properties, underlying mechanisms, and applications. Based on the work discussed in this review, we look ahead to theoretical prediction for 2D ferroelectric materials and their potential applications, such as the application in nonlinear optics. The progress in theoretical and experimental research could lead to the discovery and design of next-generation nanoelectronic and optoelectronic devices, facilitating the applications of 2D ferroelectric materials in emerging advanced technologies. Full article
Show Figures

Figure 1

Figure 1
<p>(<b>a</b>) Top view and (<b>b</b>) side view of the CuInP<sub>2</sub>S<sub>6</sub> monolayer [<a href="#B29-nanomaterials-15-00109" class="html-bibr">29</a>]. (<b>c</b>) The PFM phase images for the 4 nm-thick CIPS flakes with reversed DC bias [<a href="#B28-nanomaterials-15-00109" class="html-bibr">28</a>]. (<b>d</b>) The corresponding PFM amplitude (black) and phase (blue) hysteresis loops during the switching process for the 4 nm-thick CIPS flakes [<a href="#B28-nanomaterials-15-00109" class="html-bibr">28</a>]. (<b>e</b>) Energetics of the CuInP<sub>2</sub>Se<sub>6</sub> monolayer and bulk sample as determined by first-principles nudged elastic band (NEB) calculations, revealing the FE(AFE)–to–paraelectric phase transitions [<a href="#B29-nanomaterials-15-00109" class="html-bibr">29</a>]. (<b>f</b>) Energy variation with aspect to the applied electric field <span class="html-italic">D</span>/<span class="html-italic">ε</span><sub>0</sub> [<a href="#B29-nanomaterials-15-00109" class="html-bibr">29</a>]. (<b>g</b>) Temperature-dependent zero-field spontaneous polarization <span class="html-italic">P</span><sub><span class="html-italic">s</span></sub> in monolayer and bulk CuInP<sub>2</sub>Se<sub>6</sub> [<a href="#B29-nanomaterials-15-00109" class="html-bibr">29</a>]. Reprinted with permission from [<a href="#B29-nanomaterials-15-00109" class="html-bibr">29</a>], 2017, American Physical Society; and [<a href="#B28-nanomaterials-15-00109" class="html-bibr">28</a>], 2016, Springer Nature.</p>
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<p>(<b>a</b>) Schematic diagram of MoS<sub>2</sub>/CIPS 2D FE-FETs [<a href="#B36-nanomaterials-15-00109" class="html-bibr">36</a>]. (<b>b</b>) Polarization–voltage loop for FE capacitor at 290 K [<a href="#B36-nanomaterials-15-00109" class="html-bibr">36</a>]. (<b>c</b>) Schematic of Cr/CIPS/graphene FTJ on the SiO<sub>2</sub>/Si substrate [<a href="#B37-nanomaterials-15-00109" class="html-bibr">37</a>]. (<b>d</b>) Band diagrams for the on- and off-states of the vdW FTJ operation [<a href="#B37-nanomaterials-15-00109" class="html-bibr">37</a>]. The built-in polarization fields are indicated by cyan arrows. Reprinted with permission from [<a href="#B36-nanomaterials-15-00109" class="html-bibr">36</a>], 2018, American Chemical Society; and [<a href="#B37-nanomaterials-15-00109" class="html-bibr">37</a>], 2020, Springer Nature.</p>
Full article ">Figure 3
<p>(<b>a</b>) Trimerization of Mo atoms in the 1T crystal structure with a <math display="inline"><semantics> <mrow> <mo>√</mo> <mn>3</mn> <mo>×</mo> <mo>√</mo> <mn>3</mn> </mrow> </semantics></math> unit cell [<a href="#B41-nanomaterials-15-00109" class="html-bibr">41</a>]. (<b>b</b>) Polarization (P) and dielectric susceptibility (χ) as a function of temperature derived from Landau theory [<a href="#B41-nanomaterials-15-00109" class="html-bibr">41</a>]. (<b>c</b>–<b>e</b>) Conductance <span class="html-italic">G</span> of undoped trilayer, bilayer, and monolayer device as <span class="html-italic">E</span><sub>⊥</sub> is swept up and down (black arrows) [<a href="#B21-nanomaterials-15-00109" class="html-bibr">21</a>]; The polarization is represented by a green or red arrow in (<b>c</b>); The location of a centre of symmetry is represented by a red dot in (<b>e</b>). Reprinted with permission from [<a href="#B41-nanomaterials-15-00109" class="html-bibr">41</a>], 2014, American Chemical Society; and [<a href="#B21-nanomaterials-15-00109" class="html-bibr">21</a>], 2018, Springer Nature.</p>
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<p>(<b>a</b>) Multi-state (green and red arrows indicate the polarization of states) control of 2D multiferroic bilayer VS<sub>2</sub> [<a href="#B45-nanomaterials-15-00109" class="html-bibr">45</a>]. (<b>b</b>) FE domains formed by Moiré patterns upon a small angle twist of a VTe<sub>2</sub> bilayer [<a href="#B47-nanomaterials-15-00109" class="html-bibr">47</a>]. Reprinted with permission from [<a href="#B45-nanomaterials-15-00109" class="html-bibr">45</a>], 2020, American Chemical Society; and [<a href="#B47-nanomaterials-15-00109" class="html-bibr">47</a>], 2018, American Chemical Society.</p>
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<p>(<b>a</b>) The geometries of stable type−I (<b>a</b>), II (<b>b</b>), and III (<b>c</b>) FE MXenes [<a href="#B53-nanomaterials-15-00109" class="html-bibr">53</a>]. (<b>d</b>) FE hysteresis loops of the Ti<sub>3</sub>C<sub>2</sub>T<sub>x</sub> MXene film at 100 °C [<a href="#B54-nanomaterials-15-00109" class="html-bibr">54</a>]. (<b>e</b>) Nonvolatile bipolar switching in single cell for logarithmic I–V measurements [<a href="#B54-nanomaterials-15-00109" class="html-bibr">54</a>]. Reprinted with permission from [<a href="#B53-nanomaterials-15-00109" class="html-bibr">53</a>], 2020, Royal Society of Chemistry; and [<a href="#B54-nanomaterials-15-00109" class="html-bibr">54</a>], 2023, AIP Publishing.</p>
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<p>(<b>a</b>) Perspective view of GeSe monolayer [<a href="#B63-nanomaterials-15-00109" class="html-bibr">63</a>]. (<b>b</b>) Potential energy surface with fractional shift of Se atoms and the corresponding contour plots [<a href="#B63-nanomaterials-15-00109" class="html-bibr">63</a>]. (<b>c</b>) Double-well potential of GeSe monolayer and the atomic configurations with specific polarization [<a href="#B63-nanomaterials-15-00109" class="html-bibr">63</a>]. Reprinted with permission from [<a href="#B63-nanomaterials-15-00109" class="html-bibr">63</a>], 2017, IOP Publishing.</p>
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<p>(<b>a</b>) Description of sliding processes. FE polarization and total energy difference as functions of the sliding distance for bilayer SnSe shifted (<b>b</b>) from AC to AD and (<b>c</b>) from AC to AB stacking sequences. (<b>d</b>–<b>g</b>) Contour plots of spontaneous polarization as a function of mechanical sliding distance for SnS, SnSe, GeS, and GeSe, respectively [<a href="#B68-nanomaterials-15-00109" class="html-bibr">68</a>]. Reprinted with permission from [<a href="#B68-nanomaterials-15-00109" class="html-bibr">68</a>], 2022, Springer Nature.</p>
Full article ">Figure 8
<p>The energy barrier of polarization reversal in α-In<sub>2</sub>Se<sub>3</sub> through (<b>a</b>) one-step and (<b>b</b>) three-step concerted mechanisms [<a href="#B72-nanomaterials-15-00109" class="html-bibr">72</a>]; In and Se atoms are in blue and red, respectively. (<b>c</b>) In-plane (initial a<sub>1</sub>–d<sub>1</sub> and switched a<sub>2</sub>–d<sub>2</sub> states) and out-of-plane (switched e–h states) PFM phase images of 2H-stacked α-In<sub>2</sub>Se<sub>3</sub> with different layers [<a href="#B73-nanomaterials-15-00109" class="html-bibr">73</a>]. Reprinted with permission from [<a href="#B72-nanomaterials-15-00109" class="html-bibr">72</a>], 2017, Springer Nature; and [<a href="#B73-nanomaterials-15-00109" class="html-bibr">73</a>], 2021, Royal Society of Chemistry.</p>
Full article ">
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