twisted bilayer graphene

We construct a tool for the calculation and visualization of Moiré bands belonging to the broad family of arbitrarily stacked twisted N + M multilayer graphene. We present the underlying k • p model of twisted bilayer graphene and extend it to twisted N + M multilayer

We combine state-of-the-art large-scale first-principles calculations with a low-energy continuum model to describe the nearly flat bands of twisted bilayer graphene at the first magic angle θ = 1.08º. We show that the energy width of the flat-band manifold, as well as the energy gap separating it from the valence and conduction bands, can be obtained only if the out-of-plane relaxations are fully taken into account. The results agree both qualitatively and quantitatively with recent experimental outcomes.

In this paper we present first-principles calculations, based on both density functional theory and maximally localized Wannier functions, to study the electronic properties and interlayer coupling of twisted MoS 2 /NbSe 2 heterobilayers. We accurately investigate different stacking configurations and commensurate twist angles by including an in-depth analysis of the interlayer van der Waals interaction. The metallic character of the investigated heterostructures is dominated, at the Fermi energy, by the NbSe 2 atomic orbitals and shows a strong dependence on the twist angle. Notably, at the smallest considered twist angle, band structure flattening at the Fermi energy shows up, which should result in a lower conductivity of the metallic heterobilayer. The electrostatic potential analysis reveals no significant modification of the potential pattern with respect to the potentials of the isolated layers, with the exception of the interface region. A moderate electronic charge redistribution, compatible with electronically weakly coupled layers, is set up following the formation of the interface. The dependence of the electronic structure on the twist angle acts as a new degree of freedom for tuning properties relevant in electronic device applications.