MOCVD and MOALD of nanostructured cemented Carbides, oxide semiconductors, II-VI and III-V semiconductors
8 Followers
Recent papers in MOCVD and MOALD of nanostructured cemented Carbides, oxide semiconductors, II-VI and III-V semiconductors
This paper analyzes the microstructure evolution and its influence on tribological performance of WC-Co cemented carbide, with surface modified by a thermochemical borated treatment. This surface modification was implemented by the method... more
The application of chamfered tools in metal cutting is yet very much limited. Despite their better edge strength, relatively little research have been done so far to understand the effect of tool geometry on cutting variables and the... more
Highly relaxed GaN nanodots and submicron ridges have been selectively grown in the NSAG regime using MOVPE on lattice mismatched 6H–SiC and AlN substrates. 2D real space and 3D reciprocal space mapping was performed with a CCD detector... more
One of the central challenges of nanoscience is fabrication of nanoscale structures with well-controlled architectures using planar thin-film technology. Herein, we report that ordered nanocheckerboards in ZnMnGaO 4 films were grown... more
- by Peter L Bonanno
- Materials Science and Engineering, MOCVD and MOALD of nanostructured cemented Carbides, oxide semiconductors, II-VI and III-V semiconductors, Nanomaterials Synthesis and Characterization - semiconductors - Metal oxide nanostructures - gas sensors and solar cells., synchrotron X-ray diffraction imaging
The industrial demand for automated machining systems to enhance process productivity and quality in machining aerospace components requires investigation of tool condition monitoring. The formation of chip and its removal have a... more