Local anodic oxidation

We have studied transport of a two-dimensional electron gas through an energy barrier prepared by local anodic oxidation with an AFM tip. Experimental IV curves are first explained by a simple model in which the built-in potential is of tapered shape. Then we use computer simulations, ensemble Monte Carlo method with molecular dynamics included, to explain the details of the

The electrical property of silicon nano-structure is highly considered in nanoelectronics. In this context we investigate the field effect in nanostructure Junctionless p-type silicon nanowire transistor under the lateral gate voltage. The device fabricated by means of Atomic Force microscopy (AFM) nano lithography on Silicon on Insulator (SOI) wafer. I-V characteristic and the Drain/Source current under the lateral gate voltage investigated. The subthreshold swing measured and hysteresis effect observed for the old sample compared to new one.