CIGS
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Recent papers in CIGS
A simulation study of a Cu(In1 - xGax)Se2 (CIGS) thin film solar cell has been carried out with maximum efficiency of 24.27 % (Voc = 0.856 V, Jsc = 33.09 mA/cm(2) and FF = 85.73 %). This optimized efficiency is obtained by determining the... more
Polycrystalline CuInS2 chalcopyrite thin films were formed on a Mo-coated glass substrate by annealing of spray deposited precursor films in a sulfur atmosphere. Structural and photoelectrochemical analyses of CuInS2 films obtained by... more
Con el fin de incrementar la seguridad jurídica de la contratación internacional, la ley aplicable al contrato debe contar con un elevado nivel de previsibilidad. Para alcanzarlo, los Estados han venido implementando normas materiales... more
Real time spectroscopic ellipsometry (RTSE) fromthe near-infrared to ultraviolet has been applied for analysis of the deposition of polycrystalline thin films that formthe basis of two key photovoltaic heterojunction configurations,... more
In the scale up from small area solar cells to large area production modules, it is important to understand the effects of macroscopic nonuniformities in basic properties on the ultimate performance of the devices. In this study, we have... more
Here we use nanoscale resolved Kelvin Probe Force Microscopy (KPFM) to locally probe the open circuit voltage in CIGS thin film solar cells. Illumination-dependent KPFM shows that the grain boundaries and grain cores present variations in... more
A spectroscopic ellipsometry (SE) capability having the potential to scan production-scale areas at high speed has been developed and successfully applied tomap the alloy composition of copper–indium–gallium–diselenide (CuIn1−xGaxSe2:... more
Cu(In,Ga)Se2 thin-film solar cells with Ga-graded absorber layers and a [Cu]/([In] + [Ga]) ratio varying between 0.5 and 1.0 were prepared by coevaporation and investigated. Except for the sample with a final [Cu]/([In] + [Ga]) ratio of... more
Through-the-glass and film side spectroscopic ellipsometry (SE) are being developed as in situ, on-line, and off-line mapping tools for large area thin film photovoltaics. Given that such instrumentation allows one to extract... more
In this work we study the CdS/Cu (In, Ga) Se 2 pn junction region in Cu (In, Ga) Se 2 thin-film solar cells using atom probe tomography. A Cu-, Ga-depleted, and Cd-doped region of about 1 nm thickness is detected at the Cu (In, Ga) Se 2... more
Electrochemical deposition of indium (In) on a copper-covered molybdenum-coated glass substrate from several acidic InCl3 solutions was studied for fabrication of CuInS2-based solar cells. When In was deposited using a simple acidic InCl3... more
In the scale-up of Cu(In1-xGax)Se2 (CIGS) solar cell processing for large area photovoltaics (PV) technology, the challenge is to achieve optimum values of layer thicknesses as well as CIGS Cu stoichiometry and alloy composition x... more
Surface trap states in copper indium gallium selenide semiconductor nanocrystals (NCs), which serve as undesirable channels for nonradiative carrier recombination, remain a great challenge impeding the development of solar and... more
Through-the-glass and film side spectroscopic ellipsometry (SE) are being developed as in situ, on-line, and off-line mapping tools for large area thin film photovoltaics. Given that such instrumentation allows one to extract thicknesses,... more
Surface trap states in semiconductor copper indium gallium selenide nanocrystals (NCs) which serve as undesirable channels for non-radiative carrier recombination, remain a great challenge impeding the development of solar and... more