Random Threshold Voltage Variability Induced by Gate-Edge Fluctuations in Nanoscale Metal–Oxide–Semiconductor Field-Effect Transistors

... Effect Transistors. Authors: Putra, Arifin Tamsir; Nishida, Akio; Kamohara, Shiro; Hiramoto, Toshiro. Affiliation ... autoregressive model. W c is extracted from the gate line-edge shape depicted in a scanning electron microscope (SEM) image. This ...