Doty et al., 1992 - Google Patents
Properties of CdZnTe crystals grown by a high pressure Bridgman methodDoty et al., 1992
- Document ID
- 9997304661497636037
- Author
- Doty F
- Butler J
- Schetzina J
- Bowers K
- Publication year
- Publication venue
- Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
External Links
Snippet
CdZnTe crystals have been grown over the full range of alloy composition by a high‐ pressure Bridgman (HPB) method. Use of the inert gas over pressure reduces loss of material from the melt, and permits growth without the use of sealed ampoules, extending …
- 229910004611 CdZnTe 0 title abstract description 18
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/12—Halides
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