Iyer et al., 2019 - Google Patents
Unidirectional luminescence from quantum well metasurfacesIyer et al., 2019
View PDF- Document ID
- 9970580987454974335
- Author
- Iyer P
- DeCrescent R
- Butakov N
- Alhassan A
- Lheureux G
- Weisbuch C
- Nakamura S
- DenBaars S
- Schuller J
- et al.
- Publication year
- Publication venue
- arXiv preprint arXiv:1905.01816
External Links
Snippet
III-Nitride light emitting diodes (LEDs) are the backbone of ubiquitous lighting and display applications. Imparting directional emission is an essential requirement for many LED implementations. Although optical packaging, nano-patterning and surface roughening …
- 238000004020 luminiscence type 0 title description 7
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
- G02B6/00—Light guides
- G02B6/10—Light guides of the optical waveguide type
- G02B6/12—Light guides of the optical waveguide type of the integrated circuit kind
- G02B6/122—Light guides of the optical waveguide type of the integrated circuit kind basic optical elements, e.g. light-guiding paths
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Iyer et al. | Unidirectional luminescence from InGaN/GaN quantum-well metasurfaces | |
| Truong et al. | Light extraction from GaN-based light emitting diode structures with a noninvasive two-dimensional photonic crystal | |
| Winkler et al. | Dual-wavelength lasing in quantum-dot plasmonic lattice lasers | |
| Davanco et al. | A circular dielectric grating for vertical extraction of single quantum dot emission | |
| Wu et al. | Control of two-dimensional excitonic light emission via photonic crystal | |
| Zhao et al. | Analysis of light extraction efficiency enhancement for thin-film-flip-chip InGaN quantum wells light-emitting diodes with GaN micro-domes | |
| Dhindsa et al. | Highly ordered vertical GaAs nanowire arrays with dry etching and their optical properties | |
| EP2800456A1 (en) | Organic light emitting diode, manufacturing method for organic light emitting diode, image display device, and illumination device | |
| Zhang et al. | High-brightness polarized green InGaN/GaN light-emitting diode structure with Al-coated p-GaN grating | |
| Zhang et al. | Deep ultraviolet light-emitting diodes based on a well-ordered AlGaN nanorod array | |
| Kamakura et al. | Enhanced photoluminescence and directional white-light generation by plasmonic array | |
| Diana et al. | Photonic crystal-assisted light extraction from a colloidal quantum dot/GaN hybrid structure | |
| US20160042102A1 (en) | Semiconductor light emitting element and method for producing the same | |
| Mohtashami et al. | Metasurface light-emitting diodes with directional and focused emission | |
| Jiao et al. | The effects of nanocavity and photonic crystal in InGaN/GaN nanorod LED arrays | |
| Hauswald et al. | Luminous efficiency of ordered arrays of GaN nanowires with subwavelength diameters | |
| Wang et al. | Design of photonic crystals for light‐emitting diodes | |
| Néel et al. | Aluminum nitride photonic crystals and microdiscs for ultra-violet nanophotonics | |
| Pal et al. | Metasurface-Based Phosphor-Converted Micro-LED Architecture for Displays─ Creating Guided Modes for Enhanced Directionality | |
| Chou et al. | Polarization-selecting III-nitride elliptical nanorod light-emitting diodes fabricated with nanospherical-lens lithography | |
| Lewins et al. | Strong photonic crystal behavior in regular arrays of core-shell and quantum disc InGaN/GaN nanorod light-emitting diodes | |
| Li et al. | Tunable clover-shaped GaN photonic bandgap structures patterned by dual-step nanosphere lithography | |
| Iyer et al. | Unidirectional luminescence from quantum well metasurfaces | |
| Chen et al. | Large-area ultraviolet GaN-based photonic quasicrystal laser with high-efficiency green color emission of semipolar {10-11} In0. 3Ga0. 7N/GaN multiple quantum wells | |
| Jeong et al. | Enhancement of light output power in GaN-based light-emitting diodes using hydrothermally grown ZnO micro-walls |