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Chen et al., 2011 - Google Patents

n-Type Field-effect Transistors Based on Thieno [3, 2-b] thiophene-2, 5-dione and the Bis (dicyanomethylene) Derivatives

Chen et al., 2011

Document ID
9963850025482260522
Author
Chen S
Bolag A
Nishida J
Yamashita Y
Publication year
Publication venue
Chemistry Letters

External Links

Snippet

Abstract Two new compounds, 3, 6-bis (4-trifluoromethylphenyl) thieno [3, 2-b] thiophene-2, 5-dione (1) and 2, 5-bis (dicyanomethylene)-3, 6-bis (4-trifluoromethylphenyl) thieno [3, 2-b] thiophene (2), were synthesized and characterized. The crystal structure of 1 was …
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    • H01L51/005—Macromolecular systems with low molecular weight, e.g. cyanine dyes, coumarine dyes, tetrathiafulvalene
    • H01L51/0062—Macromolecular systems with low molecular weight, e.g. cyanine dyes, coumarine dyes, tetrathiafulvalene aromatic compounds comprising a hetero atom, e.g.: N,P,S
    • H01L51/0071—Polycyclic condensed heteroaromatic hydrocarbons
    • H01L51/0072—Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ringsystem, e.g. phenanthroline, carbazole
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    • H01L51/05—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier multistep processes for their manufacture
    • H01L51/0504—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier multistep processes for their manufacture the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or swiched, e.g. three-terminal devices
    • H01L51/0508—Field-effect devices, e.g. TFTs
    • H01L51/0512—Field-effect devices, e.g. TFTs insulated gate field effect transistors
    • H01L51/0545—Lateral single gate single channel transistors with inverted structure, i.e. the organic semiconductor layer is formed after the gate electrode
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