[go: up one dir, main page]

Akarvardar et al., 2009 - Google Patents

Ultralow voltage crossbar nonvolatile memory based on energy-reversible NEM switches

Akarvardar et al., 2009

Document ID
9792987838958482764
Author
Akarvardar K
Wong H
Publication year
Publication venue
IEEE Electron Device Letters

External Links

Snippet

A novel nonvolatile nanoelectromechanical (NEM) memory (nRAM) is introduced. Differently than the previously proposed NEM memories, the nRAM achieves the nonvolatility via workfunction engineering and eliminates the need for cell selection devices in a crossbar …
Continue reading at ieeexplore.ieee.org (other versions)

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00 - G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00 - G11C25/00 using resistance random access memory [RRAM] elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group

Similar Documents

Publication Publication Date Title
Akarvardar et al. Ultralow voltage crossbar nonvolatile memory based on energy-reversible NEM switches
US8362604B2 (en) Ferroelectric tunnel FET switch and memory
US7839710B2 (en) Nano-electro-mechanical memory cells and devices
US7652342B2 (en) Nanotube-based transfer devices and related circuits
US8044442B2 (en) Metal-insulator-metal (MIM) switching devices
Bez et al. Non-volatile memory technologies: emerging concepts and new materials
Li et al. An overview of non-volatile memory technology and the implication for tools and architectures
US8553455B2 (en) Shape memory device
Pott et al. The shuttle nanoelectromechanical nonvolatile memory
Choi et al. Compact nano-electro-mechanical non-volatile memory (NEMory) for 3D integration
US20090294869A1 (en) Negative Differential Resistance Device and Memory Using the Same
Abele et al. 1T MEMS memory based on suspended gate MOSFET
Salvatore et al. Modeling the temperature dependence of fe-FET static characteristics based on Landau's theory
Singh et al. MEM-FLASH non-volatile memory device for high-temperature multibit data storage
Akarvardar et al. Nanoelectromechanical logic and memory devices
Soon et al. A bistable electrostatic silicon nanofin relay for nonvolatile memory application
Choe et al. Ferroelectric-gated nanoelectromechanical nonvolatile memory cell
Ionescu Nano‐Electro‐Mechanical (NEM) Memory Devices
Jang et al. A DRAM-like mechanical non-volatile memory
Stone et al. A high-speed silicon single-electron random access memory
Majumdar et al. Programming scheme based optimization of hybrid 4T-2R OxRAM NVSRAM
JP6333832B2 (en) Memory circuit
Ionescu New functionality and ultra low power: Key opportunities for post-CMOS era
US11742011B2 (en) Voltage-controlled gain-cell magnetic memory
Fruehling et al. Nano-switch for study of gold contact behavior