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Crawford et al., 2020 - Google Patents

Diamond field-effect transistors with V 2 O 5-induced transfer doping: Scaling to 50-nm gate length

Crawford et al., 2020

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Document ID
977592707041558386
Author
Crawford K
Weil J
Shah P
Ruzmetov D
Neupane M
Kingkeo K
Birdwell A
Ivanov T
Publication year
Publication venue
IEEE Transactions on Electron Devices

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We report on the fabrication and measurement of hydrogen-terminated diamond field-effect transistors (FETs) incorporating V 2 O 5 as a surface acceptor material to induce transfer doping. Comparing a range of gate lengths down to 50 nm, we observe inversely scaling …
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