[go: up one dir, main page]

Ye et al., 2012 - Google Patents

A CMOS W-band× 4 frequency multiplier with cascading push-pull frequency doublers

Ye et al., 2012

Document ID
9528499203158930349
Author
Ye L
Liao H
Huang R
Publication year
Publication venue
2012 Asia Pacific Microwave Conference Proceedings

External Links

Snippet

This letter presents a CMOS W-band× 4 frequency multiplier with two cascading push-pull frequency doublers for a W-band frequency synthesizer. A pseudodifferential class-B biased cascode amplifier is adopted for the push-pull frequency doublers to achieve high …
Continue reading at ieeexplore.ieee.org (other versions)

Classifications

    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
    • H03D7/14—Balanced arrangements
    • H03D7/1425—Balanced arrangements with transistors
    • H03D7/1441—Balanced arrangements with transistors using field-effect transistors
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
    • H03D7/14—Balanced arrangements
    • H03D7/1425—Balanced arrangements with transistors
    • H03D7/1433—Balanced arrangements with transistors using bipolar transistors
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/217—Class D power amplifiers; Switching amplifiers
    • H03F3/2176—Class E amplifiers
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B19/00—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B2200/00—Indexing scheme relating to details of oscillators covered by H03B
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D2200/00—Indexing scheme relating to details of demodulation or transference of modulation from one carrier to another covered by H03D
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission

Similar Documents

Publication Publication Date Title
Zhang et al. Analysis and design of ultra-wideband mm-wave injection-locked frequency dividers using transformer-based high-order resonators
Sarkas et al. A fundamental frequency 120-GHz SiGe BiCMOS distance sensor with integrated antenna
Ye et al. A CMOS W-band× 4 frequency multiplier with cascading push-pull frequency doublers
Wang et al. Millimeter-Wave Frequency Doubler With Transistor Grounded-Shielding Structure in ${\hbox {0.13-}}\mu {\hbox {m}} $ SiGe BiCMOS Technology
Lee et al. 65.6–75.2-GHz phase-controlled push–push frequency quadrupler with 8.3% DC-to-RF efficiency in 40-nm CMOS
Chung et al. Design of 94-GHz highly efficient frequency octupler using 47-GHz current-reusing class-C frequency quadrupler
Moroni et al. A broadband millimeter-wave passive CMOS down-converter
Zeinolabedinzadeh et al. A 314 GHz, fully-integrated SiGe transmitter and receiver with integrated antenna
Mazor et al. X-band to W-band frequency multiplier in 65 nm CMOS process
Wu et al. A 53–78 GHz complementary push–push frequency doubler with implicit dual resonance for output power combining
Liu et al. A high-performance 330-GHz subharmonic mixer using Schottky diodes
So et al. A V-band differential push–push frequency doubler with a current-reuse gm-boosted buffer
Aghighi et al. A frequency doubler with second harmonic feedback for wideband, efficient frequency multiplication at millimeter-wave
Lai et al. Integrated chip design of a 10GHz band voltage controlled oscillator and charge-injected mixer with low phase noise and wide tuning range
Kuo et al. A K-band CMOS quadrature frequency tripler using sub-harmonic mixer
Bao et al. A D-band keyable high efficiency frequency quadrupler
Wu et al. A 276–312-GHz (× 12) Frequency Multiplier Chain With Milliwatt Level Output Power in 65-nm CMOS Technology
Ergintav et al. An integrated 122GHz differential frequency doubler with 37GHz bandwidth in 130 nm SiGe BiCMOS technology
Jeong et al. X-band self oscillating mixer with resonator-antenna filter
Zhang et al. A 1.6-to-3.2/4.8 GHz dual-modulus injection-locked frequency multiplier in 0.18 μm digital CMOS
Yishay et al. A 240 GHz multiplier chain with− 0.5 dBm output power in SiGe BiCMOS technology
Mazor et al. A SiGe ku-band frequency doubler with 50% bandwidth and high harmonic suppression
Kim et al. A 5.5 dBm 125–140 GHz× 6 frequency multiplier operating with-27 dBm input power in 28-nm CMOS
Yishay et al. A 17.5-dBm D-band power amplifier and doubler chain in SiGe BiCMOS technology
Chen et al. A broadband doubler with harmonic rejection in 90nm CMOS