Jameson et al., 2020 - Google Patents
An ultra low cost highly reliable 18–22 GHz T/R front-end with adaptive sensitivity, RX absorptive calibration, and fast switching time for phased-array radars …Jameson et al., 2020
- Document ID
- 9356945069909336380
- Author
- Jameson S
- Szulc E
- Buadana N
- Sayag A
- Wolfman A
- Shaham O
- Publication year
- Publication venue
- IEEE Solid-State Circuits Letters
External Links
Snippet
This letter proposes a fully integrated K-band front-end architecture for radars targeting extremely low NRE and RE. The RF front-end is composed of an SPDT-less half-duplex low- noise variable gain amplifier (LNVGA) co-designed with a power amplifier (PA) and an Rx …
- 230000035945 sensitivity 0 title abstract description 4
Classifications
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
- H03F3/605—Distributed amplifiers
- H03F3/607—Distributed amplifiers using FET's
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
- H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
- H04B1/40—Circuits
- H04B1/44—Transmit/receive switching
- H04B1/48—Transmit/receive switching in circuits for connecting transmitter and receiver to a common transmission path, e.g. by energy of transmitter
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/387—A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/02—Transmitters
- H04B1/04—Circuits
- H04B1/0458—Arrangements for matching and coupling between power amplifier and antenna or between amplifying stages
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/02—Transmitters
- H04B1/04—Circuits
- H04B2001/0408—Circuits with power amplifiers
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P5/00—Coupling devices of the waveguide type
- H01P5/12—Coupling devices having more than two ports
- H01P5/16—Conjugate devices, i.e. devices having at least one port decoupled from one other port
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US9960750B2 (en) | Apparatus for reconfigurable directional couplers in an RF transceiver with controllable capacitive coupling | |
US7936237B2 (en) | Multi-band transmit-receive switch for wireless transceiver | |
US7538609B2 (en) | Amplifier, transmitter arrangement having an amplifier and method for amplifying a signal | |
Lokhandwala et al. | A high-power 24–40-GHz transmit–receive front end for phased arrays in 45-nm CMOS SOI | |
Wang et al. | Fully integrated 10-GHz active circulator and quasi-circulator using bridged-T networks in standard CMOS | |
US7129783B2 (en) | Hybrid active combiner and circulator | |
Kim et al. | A Switchless, $ Q $-Band Bidirectional Transceiver in 0.12-$\mu $ m SiGe BiCMOS Technology | |
Han et al. | A Ka-band 4-ch bi-directional CMOS T/R chipset for 5G beamforming system | |
Chen et al. | A 140GHz transceiver with integrated antenna, inherent-low-loss duplexing and adaptive self-interference cancellation for FMCW monostatic radar | |
Kumar et al. | A 60-GHz coplanar waveguide-based bidirectional LNA in SiGe BiCMOS | |
Suh et al. | A 7-GHz CMOS bidirectional variable gain amplifier with low gain and phase imbalances | |
Yu et al. | A Ku-band eight-element phased-array transmitter with built-in self-test capability in 180-nm CMOS technology | |
Manente et al. | A 22–31 GHz bidirectional 5G transceiver front-end in 28 nm CMOS | |
Jameson et al. | An ultra low cost highly reliable 18–22 GHz T/R front-end with adaptive sensitivity, RX absorptive calibration, and fast switching time for phased-array radars applications | |
Park et al. | A 28 GHz 8-channel fully differential beamforming IC in 65nm CMOS process | |
KR20050057715A (en) | Low noise amplifier with variable matching network | |
Guan et al. | A 33.5-37.5 GHz 4-Element Phased-Array Transceiver Front-End with High-Accuracy Low-Variation 6-bit Resolution 360° Phase Shift and 0~ 31.5 dB Gain Control in 65 nm CMOS | |
US20220109220A1 (en) | Power splitter-combiner circuits in 5g mm-wave beamformer architectures | |
KR101605975B1 (en) | Beamforming system apparatus having two stage phase shifters and method thereof | |
Jang et al. | Design of CMOS-based unit channel of beamforming transceivers for FACS applications | |
KR101567472B1 (en) | Transceiver switchless bi-directional distributed amplifying apparatus | |
Jiang et al. | A CMOS Ku-band receiver chain for phased array system | |
US20080106331A1 (en) | Switching Low Noise Amplifier | |
Wang et al. | A fully integrated S-band 1-watt phased array T/R IC in 0.13 μm SOI-CMOS technology | |
Yadav et al. | Design of p-HEMT based Low Noise Amplifier for RF applications in C Band |