[go: up one dir, main page]

Jameson et al., 2020 - Google Patents

An ultra low cost highly reliable 18–22 GHz T/R front-end with adaptive sensitivity, RX absorptive calibration, and fast switching time for phased-array radars …

Jameson et al., 2020

Document ID
9356945069909336380
Author
Jameson S
Szulc E
Buadana N
Sayag A
Wolfman A
Shaham O
Publication year
Publication venue
IEEE Solid-State Circuits Letters

External Links

Snippet

This letter proposes a fully integrated K-band front-end architecture for radars targeting extremely low NRE and RE. The RF front-end is composed of an SPDT-less half-duplex low- noise variable gain amplifier (LNVGA) co-designed with a power amplifier (PA) and an Rx …
Continue reading at ieeexplore.ieee.org (other versions)

Classifications

    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189High frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/60Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
    • H03F3/605Distributed amplifiers
    • H03F3/607Distributed amplifiers using FET's
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H03F3/245Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04BTRANSMISSION
    • H04B1/00Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40Circuits
    • H04B1/44Transmit/receive switching
    • H04B1/48Transmit/receive switching in circuits for connecting transmitter and receiver to a common transmission path, e.g. by energy of transmitter
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/387A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04BTRANSMISSION
    • H04B1/00Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/02Transmitters
    • H04B1/04Circuits
    • H04B1/0458Arrangements for matching and coupling between power amplifier and antenna or between amplifying stages
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04BTRANSMISSION
    • H04B1/00Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/02Transmitters
    • H04B1/04Circuits
    • H04B2001/0408Circuits with power amplifiers
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P5/00Coupling devices of the waveguide type
    • H01P5/12Coupling devices having more than two ports
    • H01P5/16Conjugate devices, i.e. devices having at least one port decoupled from one other port

Similar Documents

Publication Publication Date Title
US9960750B2 (en) Apparatus for reconfigurable directional couplers in an RF transceiver with controllable capacitive coupling
US7936237B2 (en) Multi-band transmit-receive switch for wireless transceiver
US7538609B2 (en) Amplifier, transmitter arrangement having an amplifier and method for amplifying a signal
Lokhandwala et al. A high-power 24–40-GHz transmit–receive front end for phased arrays in 45-nm CMOS SOI
Wang et al. Fully integrated 10-GHz active circulator and quasi-circulator using bridged-T networks in standard CMOS
US7129783B2 (en) Hybrid active combiner and circulator
Kim et al. A Switchless, $ Q $-Band Bidirectional Transceiver in 0.12-$\mu $ m SiGe BiCMOS Technology
Han et al. A Ka-band 4-ch bi-directional CMOS T/R chipset for 5G beamforming system
Chen et al. A 140GHz transceiver with integrated antenna, inherent-low-loss duplexing and adaptive self-interference cancellation for FMCW monostatic radar
Kumar et al. A 60-GHz coplanar waveguide-based bidirectional LNA in SiGe BiCMOS
Suh et al. A 7-GHz CMOS bidirectional variable gain amplifier with low gain and phase imbalances
Yu et al. A Ku-band eight-element phased-array transmitter with built-in self-test capability in 180-nm CMOS technology
Manente et al. A 22–31 GHz bidirectional 5G transceiver front-end in 28 nm CMOS
Jameson et al. An ultra low cost highly reliable 18–22 GHz T/R front-end with adaptive sensitivity, RX absorptive calibration, and fast switching time for phased-array radars applications
Park et al. A 28 GHz 8-channel fully differential beamforming IC in 65nm CMOS process
KR20050057715A (en) Low noise amplifier with variable matching network
Guan et al. A 33.5-37.5 GHz 4-Element Phased-Array Transceiver Front-End with High-Accuracy Low-Variation 6-bit Resolution 360° Phase Shift and 0~ 31.5 dB Gain Control in 65 nm CMOS
US20220109220A1 (en) Power splitter-combiner circuits in 5g mm-wave beamformer architectures
KR101605975B1 (en) Beamforming system apparatus having two stage phase shifters and method thereof
Jang et al. Design of CMOS-based unit channel of beamforming transceivers for FACS applications
KR101567472B1 (en) Transceiver switchless bi-directional distributed amplifying apparatus
Jiang et al. A CMOS Ku-band receiver chain for phased array system
US20080106331A1 (en) Switching Low Noise Amplifier
Wang et al. A fully integrated S-band 1-watt phased array T/R IC in 0.13 μm SOI-CMOS technology
Yadav et al. Design of p-HEMT based Low Noise Amplifier for RF applications in C Band