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Hoffman et al., 1995 - Google Patents

Plasma‐enhanced chemical vapor deposition of silicon, germanium, and tin nitride thin films from metalorganic precursors

Hoffman et al., 1995

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Document ID
9286725883891559900
Author
Hoffman D
Prakash Rangarajan S
Athavale S
Economou D
Liu J
Zheng Z
Chu W
Publication year
Publication venue
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

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Nearly stoichiometric silicon, germanium, and tin nitride thin films were deposited from the corresponding homoleptic dimethylamido complexes M (NMe2) 4 (M= Si, Ge, Sn; Me= CH3), and an ammonia plasma at low substrate temperatures (< 400° C). Tin nitride films were …
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    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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