Niesar et al., 2010 - Google Patents
Defect reduction in silicon nanoparticles by low-temperature vacuum annealingNiesar et al., 2010
View PDF- Document ID
- 915610579933857132
- Author
- Niesar S
- Stegner A
- Pereira R
- Hoeb M
- Wiggers H
- Brandt M
- Stutzmann M
- Publication year
- Publication venue
- Applied Physics Letters
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Snippet
Using electron paramagnetic resonance, we find that vacuum annealing at 200 C leads to a significant reduction in the silicon dangling bond (Si-db) defect density in silicon nanoparticles (Si-NPs). The best improvement of the Si-db density by a factor of 10 is …
- 239000005543 nano-size silicon particle 0 title abstract description 33
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