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Cheang et al., 2021 - Google Patents

Multiplication width dependent avalanche characteristics in GaN/4H-SiC heterojunction avalanche photodiodes

Cheang et al., 2021

Document ID
9087619404442145574
Author
Cheang P
Wong E
Teo L
Publication year
Publication venue
Optical and Quantum Electronics

External Links

Snippet

A Monte Carlo model using random ionization path lengths describing the carriers quantum transport in thin gallium nitride/silicon carbide (GaN/4H-SiC) heterojunction avalanche photodiodes (HAPDs) for ultraviolet detection is developed. This work simulated the …
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    • H01L31/08—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
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