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Lin et al., 2003 - Google Patents

Inductively coupled plasma etching of GaN using Cl2/He gases

Lin et al., 2003

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Document ID
8796101822249082862
Author
Lin Y
Chang S
Su Y
Shei S
Hsu S
Publication year
Publication venue
Materials Science and Engineering: B

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We investigated n-GaN etched by an inductively coupled plasma (ICP) etcher using Cl2/Ar and Cl2/He as the etching gases. A detailed study on the samples etched in different ICP power, RF power, process pressure and Cl2/Ar (He) mixing ratio was performed. It was …
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