Matsuda et al., 2025 - Google Patents
Current-assisted low-temperature silver sinter bonding to silicon carbide by utilizing ion migrationMatsuda et al., 2025
View HTML- Document ID
- 8772437351250295378
- Author
- Matsuda T
- Matsuda T
- Kambara M
- Hirose A
- Publication year
- Publication venue
- Materials & Design
External Links
Snippet
Sinter bonding using fine metal particles has attracted significant attention as a promising technology for next-generation power devices. However, achieving high-strength joints between semiconductor materials and metal substrates remains challenging due to the low …
- 150000002500 ions 0 title abstract description 43
Classifications
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- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0103—Zinc [Zn]
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making alloys
- C22C1/10—Alloys containing non-metals
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