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Bousetta et al., 1991 - Google Patents

Si ultrashallow p+ n junctions using low‐energy boron implantation

Bousetta et al., 1991

Document ID
867548552342023012
Author
Bousetta A
Van den Berg J
Armour D
Zalm P
Publication year
Publication venue
Applied physics letters

External Links

Snippet

Ultrashallow boron‐doped junctions in silicon have been investigated using secondary‐ion mass spectroscopy and four‐point probe technique. The junctions were obtained by implanting B+ ions into n‐type Si (100) at 200 eV to doses of 1.5× 1014 and 6× 1014 cm− 2 …
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