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Phan et al., 2014 - Google Patents

Thickness dependence of the piezoresistive effect in p-type single crystalline 3C-SiC nanothin films

Phan et al., 2014

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Document ID
8619550424833383
Author
Phan H
Dao D
Tanner P
Han J
Nguyen N
Dimitrijev S
Walker G
Wang L
Zhu Y
Publication year
Publication venue
Journal of Materials Chemistry C

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This paper reports, for the first time, the piezoresistive effect of p-type single crystalline 3C- SiC nanothin films grown by LPCVD at low temperature. Compared to thick SiC films, the gauge factors of the 80 nm and 130 nm films decreased remarkably. This result indicates …
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Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies; Multistep manufacturing processes therefor characterised by the materials of which they are formed

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