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Chatterjee et al., 2021 - Google Patents

Role of oxygen vacancies on the low-temperature dielectric relaxor behavior in epitaxial Ba 0.85 Ca 0.15 Ti 0.9 Zr 0.1 O 3 thin films

Chatterjee et al., 2021

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Document ID
8585327635279610369
Author
Chatterjee S
Barman A
Barman S
Chabri T
Kar-Narayan S
Datta A
Mukherjee D
Publication year
Publication venue
Physical Review Materials

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Snippet

Dielectric relaxation in ferroelectric perovskites can result from different inherent chemical and charge disorders within their crystal structures. Despite several theories on dielectric relaxations, the relationship between the concentration of oxygen vacancy (VO) and …
Continue reading at www.researchgate.net (PDF) (other versions)

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