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Mohanbabu et al., 2024 - Google Patents

Advancements in GaN technologies: power, RF, digital and quantum applications

Mohanbabu et al., 2024

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Document ID
8579579217640801196
Author
Mohanbabu A
Maheswari S
Vinodhkumar N
Murugapandiyan P
Kumar R
Publication year
Publication venue
Nanoelectronic Devices and Applications

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Snippet

Quantum well devices based on III-V heterostructures outperform Field Effect Transistors (FETs) by harnessing the exceptional properties of the twodimensional electron gas (2DEG) in various material interface systems. In high-power electronics, III-V-based Gallium Nitride …
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