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Nguyen et al., 2012 - Google Patents

In 0.5 Ga 0.5 As-Based Metal-Oxide-Semiconductor Capacitor on GaAs Substrate Using Metal-Organic Chemical Vapor Deposition

Nguyen et al., 2012

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Document ID
8531025057049110387
Author
Nguyen H
Trinh H
Chang E
Lee C
Wang S
Yu H
Hsu C
Nguyen C
Publication year
Publication venue
IEEE transactions on electron devices

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Snippet

We demonstrate the good-performance In 0.5 Ga 0.5 As-based metal-oxide-semiconductor capacitor (MOSCAP) on GaAs substrate using metal-organic chemical vapor deposition technique. In 0.5 Ga 0.5 As film grown on GaAs substrate is proved to be high quality with …
Continue reading at ir.lib.nycu.edu.tw (PDF) (other versions)

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